| PDTC143ES |
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 4.7 kohm, R2 = 4.7 kohm |
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78.55KB |
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| PDTC143ES |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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56.59KB |
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| PDTC143ES |
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Philips Semiconductors
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RESISTOR-EQUIPPED TRANSISTORS |
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4.38KB |
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| PDTC143ES,126 |
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NXP Semiconductors
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 500MW TO92-3 |
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| PDTC143ES AMO |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 4.7 kOhm - Complement: PDTA143ES ; hFE max:>20 ; hFE min: 20 ; IO max: 100 mA; Input resistor: 4.7 kOhm; Polarity: NPN ; Ptot max: 500 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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102.59KB |
14 |
| PDTC143ESAMO |
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Philips Semiconductors
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NPN resistor-equipped transistor |
Original |
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56.58KB |
8 |
