PEA SOT23 Search Results

Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor PMBTA06 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 em itter 3 collector • G eneral purpose sw itching and am plification in e.g.

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistor BSS64 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r H igh-voltage general purpose and sw itching

BCX17

Abstract: BCX18 BCX19 sot23 marking JR
Contextual Info: Philips Semiconductors Product specification BCX17; BCX18 PNP general purpose transistors FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • S aturated sw itching and d rive r applications e.g. for

BSS63

Abstract: bss63 bm on pnp low saturation transistor sot23 BSS64 MV TRANSISTOR SOT23 sot23 marking JR Philips BSS63
Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistor BSS63 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 100 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • H igh-voltage general purpose

C849

Abstract: BC850 SOT23 276.C850
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1997 Sep 02 File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Aug 06 PHILIPS Philips Semiconductors Product specification

Contextual Info: BAT54 SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky barrier diode with an integrated p-n junction protection ring in a micro­ miniature SOT-23 envelope intended for surface mounting. The diode features especially a low forward voltage. QUICK REFERENCE DATA

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA — G r e e n L i n e MMBD1000LT1 M M BD2000T1 M M BD3000T1 M M SD1000T1 Sw itching Diode Part of the GreenLine™ Portfolio of devices with energy-conserving traits. This switching diode has the following features:

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54LT1 These Schottky barrier diodes are designed tor high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

PMBTA64

Contextual Info: Philips Semiconductors Product specification PNP Darlington transistor PMBTA64 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 base • High DC current gain (min. 10000). 2 e m itte r 3 co lle cto r APPLICATIONS

Contextual Info: Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 30 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • RF stages in FM front-ends in com m on base

BCW72

Abstract: Philips transistor k1 BCW69 BCW70 BCW71 sot23 marking JR
Contextual Info: Philips Semiconductors Product specification BCW71 ; BCW72 NPN general purpose transistors FEATURES PINNING • Low cu rrent 100 mA PIN DESCRIPTION • Low voltage (45 V) 1 base • Low noise. 2 em itter 3 collector APPLICATIONS • G eneral purpose sw itching and am plification.

transistor npn U8

Abstract: MARKING E1 SOT23 TRANSISTOR marking code u8 transistor lj lj marking transistor sot23 MV TRANSISTOR SOT23 lj marking transistor transistor 1j sot23 marking u8 Transistor Marking 1J
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor BCX19 FEATURES PINNING • High current 500 mA PIN • Low voltage (45 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r G eneral purpose am plification S aturated sw itching and d rive r applications.

Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1998 Aug 06 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Preliminary specification PNP BISS transistor PMMT591A FEATURES PINNING • High current max. 1 A PIN • Low collector-em itte r saturation voltage ensures

BT5401

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT5551 NPN high-voltage transistor Product specification Supersedes data of 1997 Jul 02 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor PMBT5551

T6428

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 02 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors PMBT6428; PMBT6429 FEATURES PINNING • Low curren t max. 100 mA

s250

Abstract: lw code sot S250-DO Q62703-Q1038
Contextual Info: SIEMENS SOT-23 MULTILED , Diffused LU S250, LV S260, LW S260 Besondere Merkmale • • • • • • • eingefärbtes, diffuses Gehäuse extrem weitwinklig als optischer Indikator einsetzbar für alle SMT-Bestück- und Löttechniken geeignet beide Farben getrennt ansteuerbar

sm58a

Abstract: DIODE ZENER BZW 06 903 diode BZW 04 DIODE ZENER 8ZW06 sot 903 DO-214 ea D0-214AB diode zener SMB case d0214ac REFLOW
Contextual Info: TVS AND ZENER PACKAGING CODES Standard Package Code Anti-static Package Codes 1 51 Bulk 2 52 DO-214/215AA SMB , 12mm Tape, T Diameter Plastic Reel Packaging Description DO-218AA (SM5-8A), 24mm Tape, 13" Dia. Paper Reel, Anode Towards Sprocket Hole 2D 2E DO-218AA (SM5-8A), 24mm Tape, 13” Dia. Paper Reel, Cathode Towards Sprocket Hole

IN5908

Abstract: IN5908 diodes IN5907 IN5555 in5556 h8 diode zener IN5558
Contextual Info: SEMITRON INDUSTRIES LT» M3E » B 00G0124 fi E S SLCB I N 5 5 5 5 , 5 5 5 6 , 5 5 5 7 , 5 5 5 8 , I N 5 9 0 7 , 5 9 8 S E R I E S Transient Voltage Suppressor •Glass Passivated junction Voltage Range 6 -1 9 1 Volts ■1.5KW Peak Pulse Power 1.0 Watt Steady State ■IN5907 CECC Release

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 03 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BSS63 PINNING FEATURES • Low curren t max. 100 mA PIN • High voltage (max. 100 V).

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401

Contextual Info: IS TAIW AN LI TON E L E C T R O N I C ff.v >/ M^E 1 • 0035^5 0 0 0 3 3 ^ 4 35=5 ■ SOT-23 SURFACE MOUNT ASSEMBLY LED LAMP LITE* :L T L - W TLIT P K ^ Ü Ö 9 Q Ä , FEATURES • • • • M IC R O M IN IA T U R E PACKAG E LED LAMP. SURFACE M O UN T ASSEM BLY LAMP.

1.5ke 390

Abstract: 33c marking sot-363 code marking ssi sot-23 VS388-2.5K
Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1.5KE_SERIES PanJit Part Number: 1.5KE_SERIES Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129

PNP TRANSISTOR marking pr

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 08 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 30 V).

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Jul 21 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistors PMBTA92; PMBTA93 FEATURES