PED RELAY 95 Search Results

9RV3

Contextual Info: DS-VA-GT1000-eng August , 2014 Data Sheet Glass Tube Flowmeter Model GT1000 Model GT1020 Model GT1024 Variable Area Industrial Glass Tube, Variable Area Flowmeters Description The Brooks GT 1000 combines ruggedness and simplicity in design to provide a versatile

MT3809G

Abstract: DEK13
Contextual Info: Installation and Operation Manual X-VA-MT3809G-MT3810G-eng Part Number: 541B182AAG December, 2014 Models MT3809G & MT3810G Brooks Models MT3809G and MT3810G Metal Tube Variable Area Flowmeters Model MT3809G General Purpose Housing Model MT3809G Model MT3809G

F9530

Abstract: 9533E IRF9530
Contextual Info: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated

K3G250-AY11-C2

Abstract: K3G310-BB49-02 engel
Contextual Info: EC centrifugal fans – RadiPac version 2014-06 RadiPac: Now even more efficient The line of radial plug fans with GreenTech EC motor technology already All RadiPacs listed in the catalogue exceed the tougher new minimum established in the market has been expanded further. Our new product

IRF9511

Contextual Info: H a r r is IRF9510, IRF9511 IRF 9512 IRF9513 , Avalanche Energy Rated P-Channel Power MOSFETs Ja n u a ry 1 9 9 4 Package F e a tu re s • T O -220A B -2.5A and -3.0A , -8 0 V and -100V TOP VIEW • rDS ON = 1 -2 0 and 1 .6 ÎÎ • Single Pulse Avalanche Energy Rated

Contextual Info: Fans and drive concepts for rail technology version 2014-10 ebm-papst: Your highly competent partner in rail engineering Creating the ideal fan solution. Our advantage lies in the perfect interaction. The area of railways places particular requirements on a product. Fans developed uniquely for rail technology and for the specific field of application

ABG10

Abstract: RXKB-1 rxme1 RXMH-2 CATALOGUE SK 63-1 E RXK026 RXTNF11 RXMH2 tr bc 337 rxma1
Contextual Info: Catalogue RK 85-18 E ASEA Edition 1 A p ril 1978 Reclosing relay type RAABA For lines with delayed overcurrent protection Two-shot reclosing • Intended to be used together with delayed ove: cu rre n t relay with a sta?:~ ing co n ta ci which gives the starting

PED relay

Abstract: sn7451b PED relay 95
Contextual Info: O'IlNilN/Ti T he I n f i n i t e P o w e r o f I LIN Doc D ual P N R ot eripheral P ositive eco mmended DESCRIPTION 4 -1 AND 1990/91 for KEY Typical applications include high-speed logic buffers, pow er drivers, relay drivers, line drivers, and m emory drivers. The SG55451B/SG55461/

n52a

Abstract: STVHD90FI STVHD90
Contextual Info: SGSTHOMSON STVHD90 STVHD90FI IL D N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STVHD90 STVHD90FI 50 V 50 V R d S ofi 0.023 U 0.023 n Id 52 A 29 A . . . . . . AVALAN C H E RUG G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

backward-curved

Abstract: Centrifugal fans backward curved M2D 068-BF
Contextual Info: version 2013-05 EC/AC centrifugal fans – RadiCal The engineer’s choice EC/AC centrifugal fans – RadiCal Impellers made of high-tech compound material with optimised flow con- This opens up entirely new possibilities for applications in ventilation and

Contextual Info: ASSESS? RFP25N06, RF1S25N06, RF1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

AN9321

Contextual Info: in te r r ii RF1K49092 D ata S h e e t A u g u s t 19 99 3.SA/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,

Contextual Info: J W S S em icon du cto r RFG45N06LE, RFP45N06LE, RF1S45N06LESM I Data Sheet April 1999 45A, 60V, 0.028 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs • 45A, 60V Formerly developmental type TA49177. • rDS ON = 0.028i2 • 2kV ESD Protected • Temperature Compensating PSPICE Model

GC20930

Abstract: 6v dc motor IG 2200 19
Contextual Info: SGS-THOMSON STP25N06 STP25N06FI IM N - CHANNEL EN H A N C EM EN T M ODE PO W ER M OS TR A N SISTO R TYPE STP25N06 STP25N06FI . . . . . . V dss RDSfon 60 V 60 V 0.07 0.07 Id a il 25 A 16 A AVALANCHE RUG G EDN ESS TEC HNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C

FP23N06L

Abstract: 23N06LE 23n06
Contextual Info: ? *3 2 £ RFP23N06LE, RF1S23N06LE, RF1S23N06LESM 23A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs S e p te m b e r 1998 Features Description • 23A, 60V T hese are N -C hannel po w e r M O S F E T s m anufactured using the M eg aF E T process. T his process, w h ich uses feature

Contextual Info: R F1K 49157 h a r r is S E M I C O N D U C T O R # fl f « f l % W fl # 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 6.3A, 30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This

Contextual Info: L IN Doc #: 55454 S G 55454B /S G 75454B Series T h e I n f i n i t e P o w e r K o f ( \ I I D ual S I n n o v a t i o n N P eripheral ot R P ositive-NOR ecommended for DESCRIPTION T he SG 55454B /SG 55464/SG 55474 (S G 75454B /SG 75464/SG 75474) series

IRF 850 mosfet

Abstract: 9150C
Contextual Info: 2 3 H A R R IRF9150 IRF9151 I S Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 4 A E BOTTOM VIEW • -25A , -8 0 V and -1 0 0 V • r D S 0 N = 0.1 s o n DRAIN (FLANGE) SOURCE • Single Pulse Avalanche Energy Rated

Contextual Info: RF1K49156 HARRIS S E M I C O N D U C T O R 6.3A, 30V, Avalanche Rated, Logic Level, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 6.3A, 30V The RF1K49156 Single N-Channel power MOSFET is man­ ufactured using an advanced MegaFET process. This pro­

Contextual Info: 43 02 271 0 0 5 4 50 0 072 • ¡jy H A R R HAS 2N6851 I S Avalanche-Energy-Rated P-Channel Power MOSFETs A u g u st 1991 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -4.0A, -200V • rDS on = ° - 8 0 fi SOURCE • Single Pulse Avalanche Energy Rated

Contextual Info: RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits gives optimum

8889 UK

Contextual Info: Product Data Sheet July 2014 IP257, Rev EA Mobrey MSM400 Ultrasonic Suspended Solids Monitoring and Control System  Continuous sludge discharge monitor for up to 50% suspended solids  Choice of flanged pipeline sensors for in-line density measurement

Contextual Info: HAJtms S RFD16N02L, RFD16N02LSM Semiconductor y 16A, 20V, 0.022É1, N-Channel, Logic Level, Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of

Contextual Info: FSL234D, FSL234R h a frris S E M I C O N D U C T O R " M J a m • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Package Features • 4A, 250V, rDS ON : 0.610£1 TO-205AF • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event