PEEL 253 Search Results
PEEL 253 Datasheets Context Search
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22CV10AP
Abstract: 22cv10 nte quick cross ict peel 18CV8J palce programmer schematic blackjack vhdl code PA7140J-20 INTEL PLD910 PALCE610
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PEEL 253Contextual Info: AMI PEEL 253 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL253 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable, |
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PEEL253 PEEL 253 | |
PEEL 253
Abstract: PEEL253
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PEEL253 PEEL 253 | |
82S153Contextual Info: •AMI > g o u ld «Semiconductors CHIOS Programmable Electrically Erasable Logic Device PEEL 253 Features — PC-based software translates existing JEDEC files to PEEL253 format • Advanced CMOS E2PROM Technology • Architectural and Design Enhancements |
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PEEL253 82S153 | |
Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. Preliminary Data TM PA7040 PEEL Array CMOS Programmable Electrically Erasable Logic Array Features Flexible Architecture User-Configurable High Density Logic Array — — — — Create multi-level l/O-buried logic circuits |
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PA7040 120mA | |
Contextual Info: •> GOULD AMI CMOS Programmable Electrically Erasable Logic Array Device Ptellmlaary Data • Semiconductors PEEL PA7040 General D escription User-Configurable High Density Logic Array • Create multi-level l/O-buried logic circuits • Over 120 sum-of-products functions |
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PA7040 155mA 13ns/20ns | |
ICT Peel
Abstract: SIGNETICS* 82S153 82S153
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PEEL253 ICT Peel SIGNETICS* 82S153 82S153 | |
galvanized steel thermal conductivity
Abstract: EC-2216 DOD-A-82720 MIL-A-82720 Oakite EC-1945 ec 2216 EC-3901 Aluminum alloys physical properties D2240
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MIL-A-82720 DOD-A-82720. 220-7E-01 galvanized steel thermal conductivity EC-2216 DOD-A-82720 Oakite EC-1945 ec 2216 EC-3901 Aluminum alloys physical properties D2240 | |
pin diagram and block diagram of 74ls74
Abstract: TTL 74LS74 Micron TLC 74ls74 timing setup hold pin DIAGRAM OF IC 74ls74
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PA7040 PA7040 PA7040s pin diagram and block diagram of 74ls74 TTL 74LS74 Micron TLC 74ls74 timing setup hold pin DIAGRAM OF IC 74ls74 | |
R220
Abstract: 1R00 R050 R500
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RLN6A0000 R220 1R00 R050 R500 | |
Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL253 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE ■ COMPATIBLE PERFORMANCE — tpD = 30ns max, to E = 30ns max SUPERSET REPLACEMENT FOR PLS153 |
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PEEL253 PLS153 terms/10 | |
DOD-A-82720
Abstract: FR4 epoxy dielectric constant 4.2 DP-190 DP-100 Plus DP270 DP460 DP-420 3M DP100
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DP-100 DP-125 DP-190 DP-270 DP-420 DP-460 DOD-A-82720 FR4 epoxy dielectric constant 4.2 DP-100 Plus DP270 DP460 3M DP100 | |
EPCOS EMI FILTER 220 V 3 A
Abstract: J-STD-020D CA04F2FT5AUD010G
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B72862F1050S160 EPCOS EMI FILTER 220 V 3 A J-STD-020D CA04F2FT5AUD010G | |
iso 7637 pulse 5
Abstract: varistors smd k30a Varistor cu3225 CU4032K30 EPCOS EMI FILTER 220 V 3 A Varistor 4032 B72650M1140K072 CU3225K14AUTOG2 CU3225K17AUTOG2
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330-mm iso 7637 pulse 5 varistors smd k30a Varistor cu3225 CU4032K30 EPCOS EMI FILTER 220 V 3 A Varistor 4032 B72650M1140K072 CU3225K14AUTOG2 CU3225K17AUTOG2 | |
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Contextual Info: CTVS Ceramic transient voltage suppressors SMD multilayer varistors MLVs , low clamping voltage series Series/Type: Date: July 2014 EPCOS AG 2014. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited. |
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CU 4032 K 275 G2
Abstract: CT0402V90RFG CT0603V150RFG CT0402V150RFG CT0402V275RFG IEC-61000-4-2 1608WH 1003 B72500T7151V060
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CT1812S
Abstract: CT1812 transistor mj 4032 B72580T0600S172 B72580T0950S172 B72580T6111K072 B72580T6750K072 viscosity B7258 B72580-T6111-K072
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CT0402S14AHSG
Abstract: B72762A8140S160 CA04P2S14THSG CA04P2V150THSG CA05P4S14THSG CA06P4V150THSG CT0402V150HSG CT0603L25HSG CT0603S14AHSG B72714A
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allmax
Abstract: circuitos integrados memoria ram 6116 MC68HC705 manual circuitos integrados megamax-4g ee tools megamax-4g memorias ram RomMax puerto paralelo
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Contextual Info: Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, high-speed series Series/Type: Date: November 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited. |
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Contextual Info: Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, low capacitance series Series/Type: Date: November 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited. |
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Sn62Pb36Ag2
Abstract: J-STD-020D
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B72862F1050S160 Sn62Pb36Ag2 J-STD-020D | |
Contextual Info: Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors for telecom applications Series/Type: Date: November 2010 EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited. |
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CA04F2FT5AUD010
Abstract: CA04F2FT5AUD010G CA05F4RC5LCM270G
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B72814R8050S162 B72814R1050S162 B72814R2050S162 B72814R3050S162 B72814R5050S162 B72814R7050S162 2009f CA04F2FT5AUD010 CA04F2FT5AUD010G CA05F4RC5LCM270G |