PG-40 PINOUT Search Results

MEC5004 ECE5018

Abstract: LF 8731 SN0508073 ECE5018 MEC5004 4401b BCM4401KQL EMC4000 quanta at1 C567B
Contextual Info: 1 2 PG 45 RUN POWER SW PG 47 6 Yonah AC/BATT CONNECTOR PG 48 BATT SELECTOR PG 41 BATT CHARGER PG 42 SYSTEM RESET CKT CLOCKS ICS954301 478 Micro-FCPGA PG 17 PG 40 PG 33 PG 32 PG 19 LVDS sDVO Calistoga 400/533/667 MHZ DDR II DVI SI1362 PG 18 B TVOUT S-Video

s104 85a

Abstract: BCM4401KQL SC451ITS pinout AM3 AMD processor emc6n300 SI1362 LPC47N354 quanta foxconn dell jm5
Contextual Info: 1 2 DRAM Power 1.8V, 0.9V PG 43 DC/DC +3V_SRC +5VSUS A 3 6 7 TAHITI-INTEGRATED PG 44 Dothan AC/BATT CONNECTOR PG 47 BATT SELECTOR PG 40 BATT CHARGER PG 41 SYSTEM RESET CKT CLOCKS 478 Micro-FCPGA PG 15 PG 39 PG 3,4 Panel Connector PG 46 PG 17 4X133MHZ LVDS

LPC47N354

Abstract: BCM4401KQL quanta foxconn bm10 PR148 88sa8040 pq54 computer fan emc6n300
Contextual Info: 1 2 DRAM Power 1.8V, 0.9V PG 43 DC/DC +3V_SRC +5VSUS A 3 6 7 TAHITI-INTEGRATED PG 44 Dothan AC/BATT CONNECTOR PG 47 BATT SELECTOR PG 40 BATT CHARGER PG 41 SYSTEM RESET CKT CLOCKS 478 Micro-FCPGA PG 15 PG 39 PG 3,4 Panel Connector PG 46 PG 17 4X133MHZ LVDS

RQW200

Abstract: ICS954206AGLF RQW180N03 RQW130 PC87541v FBD42 hy5ps561621afp-25 ICS954206A RSS090 FBD41
Contextual Info: 1 2 3 PCB STACK UP 4 5 6 TW3A- DESIGN LAYER 1 : TOP DC/DC +3VSUS +5VSUS LAYER 2 : SGND1 A LAYER 3 : IN1 LAYER 4 : IN2 LAYER 5 : VCC LAYER 6 : IN3 RUN POWER SW PG 43 AC/BATT CONNECTOR PG 40 CLOCKS ICS954206 BATT CHARGER PG 40 PG 37 DDRII 667mhz LVDS 2 Channel

IPD40N03S4L-08

Abstract: PG-TO252-3-11 D1042 4n03L D40A
Contextual Info: IPD40N03S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 8.3 mW ID 40 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

Contextual Info: D P V 128X 16A H IG H S PEED 1 2 8 K X 16 U V E P R O M P G A M O D U L E PRELIM IN ARY D ESCRIPTIO N: The DPV128X16A is a 40-pin Pin Grid Array PG A consisting of two 128K X 8 U V EP R O M devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.

Contextual Info: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise. Equal access and cycle times – Commercial: 12/15/20ns

rkm 22

Abstract: rsm2rkm connector 5 pin male M12 female rkm v RKM 9
Contextual Info: 676-2012:QuarkCatalogTempNew 8/23/12 4:37 PM Page 676 CABLE ASSEMBLIES TEST & MEASUREMENT 5 Cordsets and Connectors Threaded Cordsets — 7/8-16 minifast Stock No. Mfr.’s Type Pinout* End Connector 1 End Connector 2 No. of Wires, Gauge Cable Jacket Material

Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

Contextual Info: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Fe a t ure s ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise. Equal access and cycle times

71V424

Contextual Info: IDT71V424S IDT71V424L 3.3V CMOS Static RAM 4 Meg 512K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 512K x 8 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns

Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout IDT71V124SA Features Description ◆ The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative

SO32-3

Abstract: SO-323 IDT71V124 IDT71V124SA SO32
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

IDT71V124

Abstract: IDT71V124SA
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

IDT71V124

Abstract: IDT71V124SA 71V124SA
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

IDT71V124

Abstract: IDT71V124SA
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

Contextual Info: 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V428S IDT71V428L OBSOLETE PART Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns

IDT71124

Contextual Info: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology,

IDT71V124

Abstract: IDT71V124SA
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

pulse engineering

Abstract: 92112
Contextual Info: PULSE ENGINEERING INC fai. ^ ' DEI QQQDSBT b ~ - . r r ACTIVE AU TO INSERTABLE DIP DDM > • AUTOMATICALLY INSERTABLE PACKAGE • 14 PIN INDUSTRY STANDARD PINOUT • 5 EQUALLY SPACED TAPS • TTL/DTL COMPATIBLE • LEADING EDGE PRECISION t-V.'. • • . .

Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times

IDT71124

Contextual Info: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology,

71124

Abstract: 71124S
Contextual Info: IDT71124 CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT71124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology,