Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: GaAs HBT INTEGRATED CIRCUIT PG2301T5L POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed

12-PIN

Abstract: HS350
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: GaAs HBT INTEGRATED CIRCUIT PG2301T5L POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed

12-PIN

Abstract: HS350 PG2301T5L
Contextual Info: GaAs HBT INTEGRATED CIRCUIT PG2301T5L POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The μPG2301T5L is a GaAs HBT MMIC power amplifier for Bluetooth Class 1, and other ISM band applications. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in

Contextual Info: DATA SHEET GaAs HBT INTEGRATED CIRCUIT µPG2301T5L POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The µPG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in