PHILIP IC MARKING Search Results

4046 application note philips

Abstract: transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134
Contextual Info: Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL LEE1015TA 7 iio a 2 b SbE oa4bnG t5t « p h i n DESCRIPTION APPLICATIO N S Diffused emitter ballasting resistors providing excellent

DIODE 1N5822

Abstract: marking RAV SOD84A 1N5821 diode schottky 1N5822 n5822 1N58 1N5820 1N5822 diode Philips 370
Contextual Info: Philips Semiconductors M bfc.5 3 ^ 3 1 □ □ E b c1 3 L4 • APX Controlled avalanche Schottky barrier d iod es 1N5820ID/21ID/22ID n D E S C R IP T IO N Schottky barrier d io d es in herm etically se a led S O D 8 4 A Implosion D iode ID envelope, intended for use in low output

by 028 x200

Abstract: LTE42008R OP214 PTB23001X philips 5b
Contextual Info: - 7^3 / - 9 NPN silicon planar epitaxial microwave crystal PHILIPS INTERNATIONAL FEATURES • Multiple ion implantation for optimum concentration profile • Self-alignment process for better reproducibility • Gold metallization for very good stability and long life

BF991

Abstract: G2S-50
Contextual Info: I bbSBTBl ÜG2473CÏ f i l l *APX N APIER PHILIPS/DISCRETE BF991 h?E D SIUCON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

55ay

Abstract: AL SOT-89 BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 BCX53 BCX54
Contextual Info: • b b S B ^ l 0D2MbD5 55ß BIAPX N AMER PHILIPS/DISCRETE BCX51 BCX52 BCX53 b?E T> SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended fo r applications in thick and thin -film circuits. These transistors are intended fo r general purposes as well as fo r use in driver staqes

marking code 2t7

Abstract: marking k2P Y474 BCW72 marking ATB ap 474 marking k1p marking KlP SOT-23 BCW71 k1p sot-23
Contextual Info: • bbSBTBl 0QEH5&7 70S H A P X N AP1ER PHILIPS/DISCRETE BCW71 BCW72 b?E » SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

maxim CODE TOP MARKING

Abstract: Pb95Sn5 maxim TOP MARKING garrou wafer-level packaging has arrived Maxim ic date code ANALOG DEVICES ASSEMBLY DATE CODE philip IC marking Maxim date code DS2431 dALLAS MARKING CODE maxim assembly of code
Contextual Info: Maxim > App Notes > 1-Wire Devices General Engineering Topics Keywords: flip, chip, scale, wafer, level, package, packages, packaging, wlp, ucsp, fchip, wlcsp, pb free, rohs, topmark, bump, die Apr 18, 2007 APPLICATION NOTE 4002 Understanding Flip-Chip and Chip-Scale Package Technologies and

BYD13

Abstract: BYD13D IEC134 PHILIPS BYD13
Contextual Info: SbE D 711D 02b 0040541 S4T • P H I N BYD13 SERIES V r HILIPS INTERNA TI O NA L SbE ì> 7 'OX"IS CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes and intended for general purpose rectifier applications.

BF996

Abstract: marking BS marking BS mosfet
Contextual Info: - v . - - '_-—_ N AMER PHILIP S/ DIS CRETE übE D WÊ :_ ^53^31 l i _i _ 0D13D14 T BF996 A ' T -s i-a .s -' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope, with source and substrate

BFT92

Abstract: BFR92 BFR92A 727 Transistor power values BFT92V
Contextual Info: 11 N AMER P H IL IP S /D IS C R E T E 2SE D b b S B ^ l O O lö lb ? S BFT92 T-3f-J7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor in a microminiature plastic envelope. It is primarily intended for use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems,

RT6030

Abstract: ICC12
Contextual Info: RT6030 4-CH LED Current Source Controller General Description Features The RT6030 is a current source controller, capable of driving up to 4-CH of LEDs . The part can also be used to drive an external BJT or N-MOSFET for various applications. With a wide operating voltage range from 3.8V to 13.5V,

Intel Grantsdale

Abstract: KSB772 PHD3055E RT9194
Contextual Info: RT9194 Low-Dropout Linear Regulator Controller with PGOOD Indication General Description Features The RT9194 is a low-dropout voltage regulator controller with a specific PGOOD indicating scheme, it acts as a power supervisor of the power regulated. The part could

MOSFET N SOT-23-6

Abstract: Mosfet selection criteria marking r2 SOT23-6 MOSFET KSB772 PHD3055E RT9024 100uF 12v capacitor philip IC marking sot-23-6 Marking Information MOSFET P SOT-23-6
Contextual Info: RT9024 Preliminary Low-Dropout Linear Regulator Controller with PGOOD Indication General Description Features The RT9024 is a low-dropout voltage regulator controller with a specific PGOOD indicating scheme. The part could drive an external N-MOSFET for various applications. The

74f74d

Abstract: IC 74ls245N N74F74N
Contextual Info: Product specification Philip* Sem iconductora-Signetic* FAST Product* Dual D-type flip-flop FEATURE • Industrial temperature range available -40°C to +85°C 74F74 TYPE TYPICAL W , TYPICAL SUPPLY CURRENT( TOTAL) 74F74 125MHz 11.5mA D E S C R IP T IO N

Contextual Info: RT9194 Preliminary Low-Dropout Linear Regulator Controller with PGOOD Indication General Description Features The RT9194 is a low-dropout voltage regulator controller with a specific PGOOD indicating scheme, it acts as a power supervisor of the power regulated. The part could

Contextual Info: RT9194 Preliminary Low-Dropout Linear Regulator Controller with PGOOD Indication General Description Features The RT9194 is a low-dropout voltage regulator controller with a specific PGOOD indicating scheme, it acts as a power supervisor of the power regulated. The part could

application for bt 151

Abstract: LTE42005S LTE42008R R3305
Contextual Info: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich

Intel Grantsdale

Abstract: DRI+433.92
Contextual Info: RT9194 Low-Dropout Linear Regulator Controller with PGOOD Indication General Description Features The RT9194 is a low-dropout voltage regulator controller with a specific PGOOD indicating scheme, it acts as a power supervisor of the power regulated. The part could

7M60

Contextual Info: Ffrëlips ÇOTp g rg g F reiîrnìm ry s;pgc ijficasien HVR High v o lta g e - high vaio - th ic k fflm re sisto rs FEATU S ES QUICK REFERENCE ÜATA + High temperature a:ns veltage stability j # Suitable tor poten&ometer potting: applteaifcns # V V i: d e

Snubber circuits theory, design and application

Abstract: SLUP100 Snubber circuits theory SMTDR55-2R2M-BH coilcraft and bob smith termination FCC-TLISN-T8-02 bob smith termination POE PoE and bob smith termination c1173 Transistor C1173
Contextual Info: SLUA469 – JULY 2008 Practical Guidelines to Designing an EMI Compliant PoE Powered Device with Isolated Flyback Donald V. Comiskey . System Power Management 1.1 Introduction Power over Ethernet PoE , as defined in the IEEE 802.3-2005 (clause 33) standard, provides both data

Contextual Info: PCF21219 LCD driver for character displays Rev. 1 — 14 January 2014 Product data sheet 1. General description The PCF21219 is a low power CMOS1 LCD controller and driver, designed to drive a dot matrix LCD display of 2-lines by 16 characters or 1-line by 32 characters with 5  8 dot

SN40

Abstract: edal 4l PCFB TOP3 package 60C51 80C51 PCB80C851-2-16P PCB80C851-2-16WP PCB83C851-2P PCB83C851-2WP
Contextual Info: 5bE D PHILIPS INTERNATIONAL • 7110fiSb 003^103 b^S H P H I N Philip* S em iconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller with on-chip EEPROM DESCRIPTION FEATURES The Philips 80C851/83C851 is a high-performance microcontroller fabricated

Philips PE 1203

Abstract: 82c150 pc82c150 DPM3 CAN protocol applications "transient capture" comparator Quanta NE7 marking S98 P8XC592 P82C150
Contextual Info: Philip* Semiconductor* Microcontroller Products • fc>h5 3 T 24 OO'lS'lb? ■ SIC3 . .¿limlnary specification CAN serial linked I/O device with digital and analog port functions 82C150 NAPC/PHILIPS 1. • • • Single-chip I/O device with CAN protocol controller

SAA 1251

Abstract: PUM11 IL1-11-2 60c51 TNC 24 mk 2 UPS APC 80C51 83C654 87C654 alternate SDA
Contextual Info: NAPC/PHILIPS SEMICOND bTE T> WM bbS3^2M DCH2741 fiDfi M S I C a Philip« S em iconductor« M icro contro lle r Product« Product specification CMOS single-chip 8-bit microcontroller DESCRIPTION The PB3C654 Single-Chip 8-Bit Microcontroller is manufactured in an