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    PHILIPS 220 UF Search Results

    PHILIPS 220 UF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10091790-002LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #2-56 x 0.375" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions
    10091791-003LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #6-32 x 0.625" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions
    10091790-003LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #2-56 x 0.5" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions
    10091791-001LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #6-32 x 0.375" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions
    10091791-002LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #6-32 x 0.5" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions

    PHILIPS 220 UF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TDA8589BJ

    Abstract: TDA8588BJ TDA8588B TDA8589J TDA8588AJ TDA8588 tda8589b philips speakers tweeter 440 ac voltage regulator TDA8589AJ
    Text: DATA SHEET TDA8589J; TDA8589xJ I2C-bus controlled 4 45 Watt power amplifier and multiple voltage regulator Product specication 2004 Feb 24 Philips Semiconductors Product specication I2C-bus controlled 4 45 Watt power amplier and multiple voltage regulator


    Original     		PDF TDA8589J; TDA8589xJ SCA76 R32/01/pp55 TDA8589BJ TDA8588BJ TDA8588B TDA8589J TDA8588AJ TDA8588 tda8589b philips speakers tweeter 440 ac voltage regulator TDA8589AJ

    BUK7518-30

    Abstract: PHP55N03T
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		PDF O220AB PHP55N03T BUK7518-30 PHP55N03T

    Untitled

    Abstract: No abstract text available
    Text: TDA8947J 4 通道音频放大器 Rev. 02 — 2005 年 6 月 16 日 产品数据表 1. 简介 TDA8947J 包含四个相同的音频功率放大器。 TDA8947J 可以用作：四个固定增益为 26 dB 的单端 SE 通道，固定增益为 32 dB 的桥接式负载 (BTL) 双通道，或 SE 双通道 （增


    Original     		PDF TDA8947J TDA8944AJ TDA8946AJ TDA8947J

    7518

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device


    Original     		PDF OT404 BUK7618-30 7518

    BUK9518-30

    Abstract: BUK9618-30
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.


    Original     		PDF OT404 BUK9618-30 BUK9518-30 BUK9618-30

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.


    Original     		PDF PHB55N03LT OT404

    7518

    Abstract: BUK7518-30 PHB55N03T
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device


    Original     		PDF OT404 PHB55N03T 7518 BUK7518-30 PHB55N03T

    BUK7518-30

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		PDF O220AB BUK7518-30 175on BUK7518-30

    BUK9518-30

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF O220AB BUK9518-30 BUK9518-30

    BUK95180-100A

    Abstract: BUK96180-100A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK95180-100A BUK96180-100A O220AB OT40otation BUK95180-100A BUK96180-100A

    SMD Transistor Marking Code 335

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device


    Original     		PDF PHB55N03T OT404 PHB55N03T OT404 SMD Transistor Marking Code 335

    PHP55N04LT

    Abstract: PHB55N04LT PHD55N04LT
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP55N04LT, PHB55N04LT PHD55N04LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible


    Original     		PDF PHP55N04LT, PHB55N04LT PHD55N04LT PHP55N04LT O220AB) PHB55N04LT PHD55N04LT

    PHB55N03LT

    Abstract: PHD55N03LT PHP55N03LT
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP55N03LT, PHB55N03LT PHD55N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible


    Original     		PDF PHP55N03LT, PHB55N03LT PHD55N03LT PHP55N03LT O220AB) PHB55N03LT PHD55N03LT

    phd55n03

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP55N03LT, PHB55N03LT, PHD55N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP55N03LT, PHB55N03LT, PHD55N03LT PHP55N03LT phd55n03

    TRANSISTOR SMD MARKING CODE w2

    Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
    Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright


    Original     		PDF

    Header 8x2

    Abstract: 742-08-3-103-J-XX 93CS56L PLX PCI9054 PCI9054-PQFP176 PCICONUNV BMC-30 1N4001 FA-365 LA12
    Text: 1 2 3 4 5 6 3V3 NOT MOUNTED ES1 WORKAROUND Philips Semiconductors A D4 1N4001 3V3 D5 1N4001 D6 1N4001 C6 0.1 uF C2 0.1 uF C7 0.1 uF C3 0.1 uF C8 0.1 uF C4 0.1 uF C9 0.1 uF C5 0.1 uF C10 0.1 uF 0.1 uF A + C77 C1 12 MHz/3.3 V F316-0257 R2 3V3 DP1 DM1 OC1_N/VBUS


    Original     		PDF 1N4001 F316-0257 BLM21PG221SN1 MIC2026-2 FDN338P uF/16 IP4059CX5 Header 8x2 742-08-3-103-J-XX 93CS56L PLX PCI9054 PCI9054-PQFP176 PCICONUNV BMC-30 1N4001 FA-365 LA12

    SOD124

    Abstract: viper 171 TOPSWITCH BZG142 BZG142-68 viper flyback transformer Marking STMicroelectronics zener diode philips zener diode IEC 60060-1 Marking STMicroelectronics surface zener diode
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D168 BZG142 SMA ZenBlock; zener with integrated blocking diode Product specification Supersedes data of 2001 Apr 17 2001 Aug 20 Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode


    Original     		PDF M3D168 BZG142 MGU215 DO-214AC) SCA73 613510/03/pp8 SOD124 viper 171 TOPSWITCH BZG142 BZG142-68 viper flyback transformer Marking STMicroelectronics zener diode philips zener diode IEC 60060-1 Marking STMicroelectronics surface zener diode

    M3D462

    Abstract: IEC 60060-1 starplug philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D462 BZG142 SMA ZenBlock; zener with integrated blocking diode Product specification Supersedes data of 2000 Dec 19 2001 Apr 17 Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode


    Original     		PDF M3D462 BZG142 DO-214AC 613510/02/pp8 M3D462 IEC 60060-1 starplug philips

    BLC5G22LS-100

    Abstract: BLC5G22-100 LDMOS LDMOS Technology for RF Power Amplifiers BLC5G22 metallization LDMOS digital BLF4G22-100 ldmos pa driver BLF5G22-180
    Text: 5th Generation LDMOS Philips’ 0.4 µm technology for base station RF PAs sets the standard in W-CDMA amplifier efficiency For RF power amplifiers PAs and base station manufacturers, our 5th generation LDMOS technology is a major advance. This technology offers key advantages for


    Original     		PDF

    BUK7514-30

    Abstract: PHP69N03T
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		PDF O220AB PHP69N03T BUK7514-30 PHP69N03T

    BUK9514-30

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF O220AB BUK9514-30 BUK9514-30

    BUK7505-30A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is


    Original     		PDF O220AB BUK7505-30A BUK7505-30A

    elco capacitor uf

    Abstract: DBS13P TDA1561Q
    Text: INTEGRATED CIRCUITS DATA SHEET TDA1561Q 2 x 23 W car radio power amplifier Preliminary specification Supersedes data of September 1991 File under Integrated Circuits, IC01 Philips Semiconductors 1995 May 08 Philips Semiconductors Preliminary specification


    Original     		PDF TDA1561Q TDA1561Q 13-lead DBS13P) SCD39 513061/1500/02/pp20 elco capacitor uf DBS13P

    philips uaa series

    Abstract: UF89 Uf 89 SERIE MS1 UAA 1001
    Text: P H IL IP S UF 89 P ENTODE with variable mutual conductance for use as H.F. or I.P. amplifier PENTHODE à pente variable pour utilisation comme am­ plificatrice H.F. ou M . P. P ENTODE mit veränderlicher Steilheit zur Verwendung als HP- oder ZF-Verstärker


    OCR Scan     		PDF