PHILIPS 4330 030 36300 Search Results

Contextual Info: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting

DC/DC R-785

Abstract: pn 2222 - b2b BGY21 transistor tt 2222 TT 2222 npn 171C BGY210 DCS1800
Contextual Info: Preliminary specification Philips Semiconductors UHF amplifier module BGY210 P IN N IN G -S O T321B FEATURES • 6 V nominal supply voltage PIN DESCRIPTION • 2 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs 4 RF output

c38 transistor

Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Contextual Info: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

MSA486

Abstract: uhf 3W amplifier BGY206 0104220
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier module BGY206 FEATURES PINNING - SOT388A • 4.8 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS

transistor tt 2222

Abstract: itt 2222 TT 2222 npn MRC113 MRC114 2222-581 TT 2222 bc32 transistor ITT 2222 A ITT rt.b
Contextual Info: Philips Semiconductors bbSBTBl DDSTEb? 7 2 fl APX Product specification BLV948 UHF push-pull power transistor «N AMER P H I L I P S / D I S C R E T E FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting

BGY205

Abstract: 4330 030 36 ferroxcube
Contextual Info: Product specification P hilips Sem iconductors UHF amplifier module BGY205 PINNING -SOT321B FEATURES • 6 V nominal supply voltage DESCRIPTION PIN • 3.5 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output

PHILIPS 4330 030 36300

Abstract: 4330 030 t388a t388a, 14 pin
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier module BGY206 FEATURES PINNING - SOT388A • 4.8 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs APPLICATIONS

BGY112B

Abstract: SOT288C PHILIPS 4330 030 36300 vHF amplifier module BGY112A BGY112C FERROXCUBE 4330 4330 ferroxcube
Contextual Info: Philips Semiconductors Objective specification VHF amplifier modules BGY112A; BGY112B; BGY112C FEATURES DESCRIPTION • 7.5 V nominal supply voltage The BGY112A, BGY112B and BGY112C are three-stage VHF power amplifier modules. • 6 W output power Each module consists of three NPN silicon planar

FERROXCUBE 4330

Abstract: FERROXCUBE 4330-030 MSM88 uhf amplifier BGY114D BGY114E HB 100B
Contextual Info: Product specification Philips Semiconductors UHF amplifier modules BGY114D; BGY114E FEATU RES PINNING - SOT278A • 12.5 V nominal supply voltage PIN DESCRIPTION • 6 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vsi 3 Vc 4 Vs2

bgy205

Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY205 FEATURES PINNING -SOT321B • 6 V nominal supply voltage PIN • 3.5 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 Vc Vs RF output DESCRIPTION 3 APPLICATIONS

FERROXCUBE 4330

Abstract: 4330 030 222203037479 transistor marking pl BGY241 PHILIPS 4330 030 36300
Contextual Info: P hilips S em ico n d uctors O b jective sp ecification UHF amplifier module BGY241 FEA TUR ES P IN N IN G - SO T482B • 3.5 V nom inal supply voltage PIN D E S C R IP T IO N •3 5 dB m output pow er 1 RF input • E asy output pow er control by DC voltage.

BGY113B

Abstract: BGY113A BGY113C FERROXCUBE 4330
Contextual Info: Preliminary specification Philips Semiconductors UHF amplifier modules BGY113A; BGY113B; BGY113C FEATURES DESCRIPTION • 7.5 V nominal supply voltage The BGY113A, BGY113B and BGY113C are UHF power amplifier modules. • 7 W output power Each module consists of four NPN silicon Planartransistor

DB35T

Abstract: BGY240
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier module BGY240 FEATURES PINNING - SOT388C • 3.5 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy output power control by DC voltage. 2 Vc Vs RF output 3 APPLICATIONS

BGY916

Abstract: FERROXCUBE 4330
Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY916 FEATURES PINNING - SOT365 • 26 V nominal supply voltage PIN • 16 W output power into a load of 50 Cl with an RF drive power of 25 mW. APPLICATIONS • Base station transmitting equipment operating in the

BGY114D

Abstract: pl-7 capacitor 1 uf 35 v BGY114E SC09 4330 ferroxcube
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY114D; BGY114E UHF amplifier modules Product specification Supersedes data of April 1994 File under Discrete Semiconductors, SC09 1996 Jun 04 Philips Semiconductors Product specification UHF amplifier modules BGY114D; BGY114E

cd 2003 gp

Abstract: 2322 195 4330 ferroxcube cd 4074 B
Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY916/5 PINNING SOT365A FEATURES • 26 V nominal supply voltage PIN DESCRIPTION • 5 V nominal bias voltage 1 RF input • 16 W output power into a load of 50 D. with an RF drive power of 25 mW.

ci cd 4074

Abstract: BGY916/S FERROXCUBE 4330
Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY916/5 FEATURES PINNING SOT365 • 26 V nominal supply voltage PIN DESCRIPTION • 5 V nominal bias voltage 1 RF input • 16 W output power into a load of 50 Cl with an RF drive power of 25 mW.

Amplifier Modules

Abstract: DA-157
Contextual Info: Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B FEATURES PINNING - SOT388B • Single 4.8 V nominal supply voltage PIN DESCRIPTION • 1.2 W output power 1 RF input • Easy control of output power by DC voltage 2 VC • Very high efficiency typ. 55%

BGY210

Abstract: Philips DATA Handbook system UHF amplifier module DCS1800 SC09 2222 030 capacitor philips MSA489 MSA915 BGY21
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY210 UHF amplifier module Preliminary specification File under Discrete Semiconductors, SC09 1996 May 13 Philips Semiconductors Preliminary specification UHF amplifier module BGY210 FEATURES PINNING - SOT321B • 6 V nominal supply voltage

BGY114D

Abstract: BGY114E UBD373
Contextual Info: Product specification Philips Semiconductors UHF amplifier modules BGY114D; BGY114E FEATURES DESCRIPTION • 12.5 V nominal supply voltage The BGY114D and BGY114E are five-stage UHF amplifier modules. • 6 W output power Each module consists of 5 NPN silicon Planartransistor

MGD363

Contextual Info: Product specification Philips Semiconductors UHF amplifier module BGY204 PINNING-SOT321B FEATURES • 4.8 V nominal supply voltage PIN DESCRIPTION • 3.2 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS

4330 030 36 ferroxcube

Abstract: BGY925 FERROXCUBE 4330 MM 4054
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier module BGY925 FEATURES PINNING - SOT365 • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 Cl with an RF drive power of 36 mW. APPLICATIONS • Base station transmitting equipment operating in the

Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY925 FEATURES PINNING - SOT365A • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 Q with an RF drive power of 36 mW. APPLICATIONS DESCRIPTION 1 RF input 2 Vsi 3 VS2

BGY113A

Abstract: "Amplifier Modules" BGY113B FERROXCUBE 4330 Outline T39 uhf amplifier BGY113C MSB043
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier modules BGY113A; BGY113B; BGY113C FEATURES DESCRIPTION • 7.5 V nominal supply voltage The BGY113A, BGY113B and BGY113C are UHF power amplifier modules. • 7 W output power Each module consists of four NPN silicon P lanartransistor