PHILIPS 4B1 FERRITE Search Results

WBC3

Abstract: WBC2.5/R-3S4 wbc2.5 WBC2.5/A-3s4 WBC2.5/A-4B1 IEC-68-2-20 solderability A4S2 4s2 3s4 material transistor 3s4 Wideband Chokes WBC3/R
Contextual Info: Philips Components Product specification Soft Ferrites Wideband chokes WIDEBAND CHOKES FOR EMI SUPPRESSION Grades, parameters and type numbers; see Fig.1 General data WBC1.5/A ITEM Ω (MHz) 3S4 1.5 ≥300 120 WBC1.5/A-3S4 4B1 1.5 ≥350 250 WBC1.5/A-4B1

TUB3.5

Abstract: TUB10 33B1 193B1 263B1 TUB3.7 ferrit* 3b1 tubes philips
Contextual Info: Philips Components Product specification Soft Ferrites Tubes TUBES , handbook, halfpage L D d MGC245 For dimensions see Table 1. Fig.1 Tube. Table 1 Grades, parameters and type numbers; see Fig.1 DIMENSIONS mm D TYPE NUMBER d L 4B1 3.1 −0.02 1.3 +0.2

MGC244

Abstract: rod 4B1 ROD10/200-3B1 ROD8/50-3B1 15-4B1-D 15-3B1 rod10/200-4b1 ROD6/30-4B1-D ROD5 soft ferrites
Contextual Info: Philips Components Product specification Soft Ferrites Rods RODS handbook, halfpage L D MGC244 For dimensions see Table 1. Fig.1 Rod. Table 1 Grades, parameters and type numbers; see Fig.1 DIMENSIONS mm D 2 −0.05 TYPE NUMBER L 3B1 3S3 4B1 20 −0.9 ROD2/20-3B1-D

mhb2-14

Abstract: 14-4B1 soft ferrites philips handbook MHB2-13/8/6-4B1 3C85 4A11 4B1 philips MHR2 mhb2-13 MHR2-11
Contextual Info: Philips Components Product specification Soft Ferrites Multi-hole cores MULTI-HOLE CORES Table 1 MHC6 grades, parameters and type numbers; see Fig.1 DIMENSIONS mm GRADE 3S4 TYPE NUMBER D d L 6 ±0.3 0.7 +0.2 10 ±0.5 MHC6-6/10-3S4 4B1 6 ±0.3 0.7 +0.2 10 ±0.5

Ferrite Rod Antennas for RF-identification Transponders

Abstract: philips 3C85 ferrite material philips ferrite 4b1 ferrite material 3c85 ferrite rod ANTENNA philips 4b1 ferrite rod philips ferrite core 4b1 ferrite 4b1 ferrite rod rod 4B1
Contextual Info: Application Note Philips Magnetic Products Ferrite Rod Antennas for RF-identification Transponders 0011001010100111010101001110110110 Philips Components Ferrite Rod Antennas for RF-identification Transponders Contents Introduction 2 System configuration 3

philips ferrite 4b1

Abstract: philips ferrite core 4b1 ferrit* 3b1 ELECTRO MAGNETIC INTERFERENCE ferrite core philips ferrite bead
Contextual Info: Philips Components Magnetic Products INTRODUCTION To support designers and manufacturers of electronic circuitry, PHILIPS COMPONENTS manufactures a comprehensive line of ferrite EMI-suppression products for use on circuit boards, through-hole as well as surface-mountable.

soft ferrites philips handbook

Abstract: smd 3s4 EIA 481-A WBS2.5-5 WBS2.5 WBS2.5-5/4.8/10-3S4 WBS2.5-5/4.8/10-4B1 CBW182 CBW288 SMD 284
Contextual Info: Philips Components Product specification Soft Ferrites SMD wide band chokes SMD WIDEBAND CHOKES Grades, parameters and type numbers; see Fig.3 SMD wideband choke WBS1.5-5/4.8/10 ITEM GRADE SPECIFICATION 3S4 Strip material copper Cu , tin-lead (SnPb) plated

philips ferrite 4b1

Abstract: philips ferrite core 4b1 ferrit* 3b1 philips 4330 Wideband Chokes 103B1 philips ferrite 4b1 current philips 4b1 ferrite philips ferrite bead
Contextual Info: Philips Components Magnetic Products SMD Wide Band Chokes SMD Wide Band Chokes SMD wide-band chokes are an alternative to a SMD bead when more impedance or damping is required. The design of this product is based on our well known range of through-hole wide-band chokes. In these products the conductor wire is

philips 3h1 ferrite material

Abstract: 3h1 ferrite material ferrite material 3c85 philips 3h1 ferrite philips ferrite 4b1 philips 3e1 ferrite material philips 3C85 ferrite material application Mg-Zn Ferrites Philips Components, Soft Ferrites 3C11 ferrite 3h1
Contextual Info: MAIN MAIN MENU MENU SOFT FERRITE MATERIALS Philips Components Soft Ferrites Properties specified in this section are related to room temperature 25 °C unless otherwise stated. They have been measured on sintered, non ground ring cores of dimensions ∅25 x ∅15 × 10 mm which are not

3C80 ferrite

Abstract: philips 3h1 ferrite material 3c80 material Philips Components, Soft Ferrites Data Handbook M PHILIPS toroidal core 3c90 3h1 ferrite material PHILIPS toroidal core 4a11 philips 3C85 ferrite material PHILIPS toroidal core 3c85 PHILIPS ferrite transformer cores
Contextual Info: MAIN MAIN MENU MENU APPLICATIONS Philips Components Soft ferrites Applications APPLICATIONS INTERFERENCE SUPPRESSION Introduction Unwanted high frequency signals are blocked, wanted signals can pass. With the increasing use of electronic equipment it is of vital importance to suppress interfering

Contextual Info: Philips Semiconductors bb53T31 APX 0 0 3 2 4 CH bb? Product specification Hybrid integrated VHF/UHF w ideband amplifier OM2064 N AMER PHILIPS/DISCRETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for

philips ferrite 4b1

Contextual Info: bb53^31 Philips Sem iconductors 0 0 3 3 4T3 303 ^HAPX pro d u ct specification Hybrid integrated VHF/UHF wideband amplifier OM2063 N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology

1S1212

Abstract: zo 103 ma MC75
Contextual Info: Philips Semiconductors Product specification Wideband amplifier module OM2Q63 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV systems and as a general purpose amplifier for VHF and UHF

philips ferrite 4b1

Abstract: philips ferrite core 4b1 2G2 capacitor philips 4b1 ferrite uhf vhf booster WEA199 vHF amplifier module OM2063 3s4t
Contextual Info: bbS3^31 Philips Semiconductors DG324T2 205 ^HAPX Product specification Hybrid integrated VHF/UHF wideband amplifier OM2063 N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology

B0239

Abstract: Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor
Contextual Info: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb - 25 °C in a common emitter class AB.

Contextual Info: bb53T3:ii 003250b b27 « A P X OM2070 N AflER PHILIPS/DISCRETE bTE D _ / V _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate,

OM2070

Abstract: philips if catv amplifier
Contextual Info: Philips Semiconductors Product specification Wideband amplifier module OM2070 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-fiim substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

j78 transistor

Abstract: j78 transistor equivalent
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very

Contextual Info: N AMER PH IL IPS /DI SCRE TE b^E ]> bbS3T31 0033444 SST OM361 APX _ / V _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide band amplifier in hybrid integrated circuit technique on a thin-film substrate,

uhf tv booster circuit diagram

Abstract: OM2070 112dBuV philips if catv amplifier
Contextual Info: • IAPX DÜ32SDb b27 OM2070 LTE D N AMER PHILIPS/DISCRETE y HYBRID IN TEG R A TED CIRCUIT VHF/UHF W IDE-BAND A M PLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in M ATV and CATV systems, and as

Contextual Info: N AMER PHILIPS/DISCRETE b'JE T> bbsa^ai 003245D fiS3 IAPX U M d /u HYBRID INTEGRATED CIRCUIT VHF/UHF W IDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV and CATV systems, and as

Om2061

Contextual Info: 5SE D N AMER PHILIPS/DISCRETE • bbSBTBl DOlfl1!? =1 ■ OM2061 T - 'V \ - 0 ° l- 0 \ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV systems, and as generalpurpose amplifier for v.h.f. and u.h.f, applications.

by239

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB

Transistor AND DIODE Equivalent list

Abstract: 100A101kp
Contextual Info: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency