PHILIPS 4B1 MATERIAL Search Results

philips 4b1 material

Abstract: 4B1 philips
Contextual Info: Philips Components Material grade specification 4B1 4B1 SPECIFICATIONS SYMBOL µi B tanδ/µi ρ TC density CONDITIONS VALUE 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 1 MHz; 0.1 mT 25 °C; 3 MHz; 0.1 mT DC; 25 °C

WBC3

Abstract: WBC2.5/R-3S4 wbc2.5 WBC2.5/A-3s4 WBC2.5/A-4B1 IEC-68-2-20 solderability A4S2 4s2 3s4 material transistor 3s4 Wideband Chokes WBC3/R
Contextual Info: Philips Components Product specification Soft Ferrites Wideband chokes WIDEBAND CHOKES FOR EMI SUPPRESSION Grades, parameters and type numbers; see Fig.1 General data WBC1.5/A ITEM Ω (MHz) 3S4 1.5 ≥300 120 WBC1.5/A-3S4 4B1 1.5 ≥350 250 WBC1.5/A-4B1

Ferrite Rod Antennas for RF-identification Transponders

Abstract: philips 3C85 ferrite material philips ferrite 4b1 ferrite material 3c85 ferrite rod ANTENNA philips 4b1 ferrite rod philips ferrite core 4b1 ferrite 4b1 ferrite rod rod 4B1
Contextual Info: Application Note Philips Magnetic Products Ferrite Rod Antennas for RF-identification Transponders 0011001010100111010101001110110110 Philips Components Ferrite Rod Antennas for RF-identification Transponders Contents Introduction 2 System configuration 3

soft ferrites philips handbook

Abstract: smd 3s4 EIA 481-A WBS2.5-5 WBS2.5 WBS2.5-5/4.8/10-3S4 WBS2.5-5/4.8/10-4B1 CBW182 CBW288 SMD 284
Contextual Info: Philips Components Product specification Soft Ferrites SMD wide band chokes SMD WIDEBAND CHOKES Grades, parameters and type numbers; see Fig.3 SMD wideband choke WBS1.5-5/4.8/10 ITEM GRADE SPECIFICATION 3S4 Strip material copper Cu , tin-lead (SnPb) plated

ct3257a

Abstract: CT3257 c3257a C3257 transistor smd zy CBT3257AD circuit diagram of 13-1 multiplexer footprint ssop 0.635 SSOP16 package CBT3257A
Contextual Info: CBT3257A Quad 1-of-2 multiplexer/demultiplexer Rev. 01 — 27 October 2005 Product data sheet 1. General description The CBT3257A is a quad 1-of-2 high-speed TTL-compatible multiplexer/demultiplexer. The low ON-state resistance of the switch allows inputs to be connected to outputs

philips ferrite 4b1

Abstract: philips ferrite core 4b1 ferrit* 3b1 ELECTRO MAGNETIC INTERFERENCE ferrite core philips ferrite bead
Contextual Info: Philips Components Magnetic Products INTRODUCTION To support designers and manufacturers of electronic circuitry, PHILIPS COMPONENTS manufactures a comprehensive line of ferrite EMI-suppression products for use on circuit boards, through-hole as well as surface-mountable.

philips ferrite 4b1

Abstract: philips ferrite core 4b1 ferrit* 3b1 philips 4330 Wideband Chokes 103B1 philips ferrite 4b1 current philips 4b1 ferrite philips ferrite bead
Contextual Info: Philips Components Magnetic Products SMD Wide Band Chokes SMD Wide Band Chokes SMD wide-band chokes are an alternative to a SMD bead when more impedance or damping is required. The design of this product is based on our well known range of through-hole wide-band chokes. In these products the conductor wire is

philips 3h1 ferrite material

Abstract: 3h1 ferrite material ferrite material 3c85 philips 3h1 ferrite philips ferrite 4b1 philips 3e1 ferrite material philips 3C85 ferrite material application Mg-Zn Ferrites Philips Components, Soft Ferrites 3C11 ferrite 3h1
Contextual Info: MAIN MAIN MENU MENU SOFT FERRITE MATERIALS Philips Components Soft Ferrites Properties specified in this section are related to room temperature 25 °C unless otherwise stated. They have been measured on sintered, non ground ring cores of dimensions ∅25 x ∅15 × 10 mm which are not

74LVCH32245A

Abstract: 74LVCH32245AEC
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74LVCH32245A 32-bit bus transceiver with direction pin; 5 V tolerant; 3-state Product specification Supersedes data of 1999 Sep 01 2004 May 11 Philips Semiconductors Product specification 32-bit bus transceiver with direction pin;

74LVCH322245A

Abstract: 74LVCH322245AEC
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74LVCH322245A 32-bit bus transceiver with direction pin; 30 Ω series termination resistors; 5 V tolerant; 3-state Product specification Supersedes data of 1999 Sep 01 2004 May 06 Philips Semiconductors Product specification

Contextual Info: Philips Semiconductors bb53T31 APX 0 0 3 2 4 CH bb? Product specification Hybrid integrated VHF/UHF w ideband amplifier OM2064 N AMER PHILIPS/DISCRETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for

philips ferrite 4b1

Contextual Info: bb53^31 Philips Sem iconductors 0 0 3 3 4T3 303 ^HAPX pro d u ct specification Hybrid integrated VHF/UHF wideband amplifier OM2063 N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology

BC33B

Abstract: bC338 philips BC337A BC337 typical application BC337 BC327 BC327A BC328 BC337-16 BC338
Contextual Info: BC337 BC337A BC338 PHILIPS I NTERNATIONAL 5bE D 711 00 2 b OOMM fla 0T1 « P H I N • SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.

1S1212

Abstract: zo 103 ma MC75
Contextual Info: Philips Semiconductors Product specification Wideband amplifier module OM2Q63 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV systems and as a general purpose amplifier for VHF and UHF

philips ferrite core 4b1

Abstract: OM2064 ei ferrite core vHF amplifier DIAGRAM philips ferrite 4b1
Contextual Info: Philips Sem iconductors bb53T31 DDaSHTT bh? Product specification IAPX Hybrid integrated VHF/UHF wideband amplifier OM2064 N AMER PHILIPS/DISCR ETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for

B0239

Abstract: Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor
Contextual Info: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb - 25 °C in a common emitter class AB.

Contextual Info: bb53T3:ii 003250b b27 « A P X OM2070 N AflER PHILIPS/DISCRETE bTE D _ / V _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate,

OM2070

Abstract: philips if catv amplifier
Contextual Info: Philips Semiconductors Product specification Wideband amplifier module OM2070 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-fiim substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

Contextual Info: N AMER PH IL IPS /DI SCRE TE b^E ]> bbS3T31 0033444 SST OM361 APX _ / V _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide band amplifier in hybrid integrated circuit technique on a thin-film substrate,

uhf tv booster circuit diagram

Abstract: OM2070 112dBuV philips if catv amplifier
Contextual Info: • IAPX DÜ32SDb b27 OM2070 LTE D N AMER PHILIPS/DISCRETE y HYBRID IN TEG R A TED CIRCUIT VHF/UHF W IDE-BAND A M PLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in M ATV and CATV systems, and as

Contextual Info: N AMER PHILIPS/DISCRETE b'JE T> bbsa^ai 003245D fiS3 IAPX U M d /u HYBRID INTEGRATED CIRCUIT VHF/UHF W IDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV and CATV systems, and as

Om2061

Contextual Info: 5SE D N AMER PHILIPS/DISCRETE • bbSBTBl DOlfl1!? =1 ■ OM2061 T - 'V \ - 0 ° l- 0 \ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV systems, and as generalpurpose amplifier for v.h.f. and u.h.f, applications.

by239

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB

Transistor AND DIODE Equivalent list

Abstract: 100A101kp
Contextual Info: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency