PHILIPS DIODE 98 PH Search Results

SW19116

Abstract: 1331H uc80c51 usb eeprom programmer simple schematic DML97002 uda331h
Contextual Info: TECHNICAL NOTE USB AUDIO PLAYBACK PERIPHERAL APP UDA1331H EXTENDED EVALUATION BOARD AND APPLICATION DOCUMENTATION Version 1.0 DML97002 Philips Semiconductors USB-APP UDA1331H Technical Report DML97002 TECHNICAL NOTE USB AUDIO PLAYBACK PERIPHERAL (APP) UDA1331H

PHB30NQ15T

Abstract: PHP30NQ15T 502mj
Contextual Info: PHP30NQ15T; PHB30NQ15T N-channel enhancement mode field-effect transistor Rev. 02 — 12 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • • • • • PBYR2545CTF, PBYR2545CTX SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance

PHB73N06T

Abstract: PHP73N06T
Contextual Info: PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor Rev. 01 — 12 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PBYR2545CTF

Abstract: PBYR2545CT PBYR2545CTX PBYR3045WT
Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR2545CTF, PBYR2545CTX SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Isolated mounting tab

PHB47NQ10T

Abstract: PHP47NQ10T
Contextual Info: PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Rev. 01 — 16 May 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

SW2117

Abstract: USB media speaker UDA1331H DML97001 DML97002 QFP64 UDA1321 ic eeprom
Contextual Info: TECHNICAL NOTE USB AUDIO PLAYBACK PERIPHERAL APP UDA1331H EXTENDED EVALUATION BOARD AND APPLICATION NOTE 2 v1.2 DML97002 Philips Semiconductors, Inc. BLITS, Digital Media Lab USB-APP UDA1331H Technical Report DML97002 TECHNICAL NOTE USB AUDIO PLAYBACK PERIPHERAL (APP)

UDA1321 I2S

Abstract: philips I2S bus specification UDA1321 DML98003 USB DAC Configuration Editor 2.00 app abstract
Contextual Info: TECHNICAL NOTE USB DIGITAL TO ANALOG CONVERTOR UDA1321 EXTENDED EVALUATION BOARD AND APPLICATION DOCUMENTATION Version 1.2 DML98002 Version 1.2 September 19th, 1999 Philips Semiconductors USB-DAC UDA1321 Technical Report DML98002 TECHNICAL NOTE USB DIGITAL TO ANALOG CONVERTOR

PHB100N03LT

Abstract: 03AB29
Contextual Info: PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 07 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHD24N03LT

Contextual Info: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .

transistor BR 471 A

Abstract: PHD95N03LT 08216
Contextual Info: PHD95N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 18 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD95N03LT in SOT428 D-PAK .

PSMN038-100K

Contextual Info: PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.

PHD83N03LT

Abstract: PHD83
Contextual Info: PHD83N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD83N03LT in a SOT428 D-PAK .

Contextual Info: PHP54N06T N-channel enhancement mode field-effect transistor Rev. 01 — 14 February 2001 Product specification M3D307 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHT4NQ10LT

Abstract: SC-73
Contextual Info: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

07342

Contextual Info: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

03ac29

Abstract: HZG336 MS-012AA PHN103T
Contextual Info: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .

PSMN085-150K

Contextual Info: PSMN085-150K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.

DC TO DC convertor

Abstract: PSMN165-200K
Contextual Info: PSMN165-200K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.

Royal Electronics

Abstract: PHB160N03T
Contextual Info: PHB160N03T N-channel enhancement mode field-effect transistor Rev. 01 — 13 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHT4NQ10T

Abstract: SC-73
Contextual Info: PHT4NQ10T N-channel enhancement mode field-effect transistor Rev. 01 — 31 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHT4NQ10T in SOT223.

phd98n03

Abstract: 08338
Contextual Info: PHP98N03LT; PHB98N03LT; PHD98N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

SCA72

Contextual Info: PHP96NQ03LT;PHB96NQ03LT PHD96NQ03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: