PHILIPS FW 26 Search Results

"MARKING CODE LE"

Abstract: dual-gate BF1202WR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES

BF1201WR

Abstract: dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES

224M Z5U 50

Abstract: 473Z 103M capacitor Z5U A40A330J A40A270J A41A102K A333M 104m Z5U 50 A41C104K 15z5
Contextual Info: Ceramic Capacitors Series A Mono-Axial 50VDC and 100VDC Conformai Coated Axial Multilayer Capacitors Description: • See figures 1 and 2 for part num ber code for OEM and distributor • Temperature coefficient: COG, X7R, Z5U Param eters Term inal strength:

104m Z5U 50

Abstract: 103M capacitor Z5U Z5U 103M ase 104m capacitor 104m z5u 50 G391K C41C102K C43C103 103M z5u JUPITER ber
Contextual Info: Ceramic Capacitors Series G Mono-Glass 50VDC Glass Encapsulated, Axial Multilayer Capacitors D escription: Series G Glass Encapsulated capacitors feature reliable hermetically sealed type, glass to metal construction. This durable construction prevents reflow of

BF1203

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Preliminary specification 2000 May 29 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

SILICON APD Pre-Amplifier

Contextual Info: Silicon APD Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339795-VAR Description CMC Electronics’ 264-339795 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal

Philips FI1256 MK2 TV Tuner

Abstract: fi1256 philips tv tuner 3139 147 mk2 resistor fi1256 mk2 tag 8713 fi1256mk2 tuner 3139 147 13741 Philips 3139 147 tv tuner 3139 147
Contextual Info: BU TUNERS DATA SHEET FI1256 MK2 Desktop video tuner system CCIR D/K Preliminary specification File under BU Tuners, DC03 1996 Jul 26 Philips Components Preliminary specification Desktop video tuner system CCIR D/K FI1256 MK2 FEATURES • System CCIR D/K • True 5 V device low power dissipation

Philips 3139 147

Abstract: mk2 tuner mk2 resistor FI1246 3139 147 13721 JUPITER M series connector FED tuner 3139 147 Philips TV front end module philips tv tuner 3139 147 Philips TV IC
Contextual Info: BU TUNERS DATA SHEET FI1246 MK2 Desktop video tuner system CCIR I Preliminary specification File under BU Tuners, DC03 1996 Jul 26 Philips Components Preliminary specification Desktop video tuner system CCIR I FI1246 MK2 FEATURES • System CCIR I • True 5 V device low power dissipation

photodiode 1550nm nep

Contextual Info: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input

Contextual Info: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The

TDA10086

Abstract: SMD CODE N10 8PSK HTSSOP32 TDA8260TW TDA8261TW TDA8260
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8261TW Satellite Zero-IF QPSK/8PSK downconverter with PLL synthesizer Preliminary specification Supersedes data of 2003 May 28 2004 May 26 Philips Semiconductors Preliminary specification Satellite Zero-IF QPSK/8PSK downconverter with PLL synthesizer

TDA10086

Abstract: SMD TRANSISTOR N13 line AMPLIFIER satellite HTSSOP32 TDA8260TW TDA8261TW CRYSTAL SMD 4MHZ satellite tuner
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8261TW Satellite Zero-IF QPSK/8PSK downconverter with PLL synthesizer Product specification Supersedes data of 2004 May 26 2004 Oct 25 Philips Semiconductors Product specification Satellite Zero-IF QPSK/8PSK downconverter with PLL synthesizer

00941

Abstract: BF1205
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

photodiode InGaAs NEP

Contextual Info: Receiver TIA with TEC MICROELECTRONICS 200 MHz , 200 m InGaAs APD Avalanche Photodiode 264-339769-101 Description CMC Electronics’ 264-339769-101 is using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier

Contextual Info: Silicon APD Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339794-VAR Description CMC Electronics’ 264-339794 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal feedback

MOSFET 4466

Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES

BF1109

Abstract: BF1109R BF1109WR dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs

transistor marking NEP ghz

Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs

SN74HC logic family

Abstract: MM74HC compare to MC74HC sn74lvc SOT505-2 ti 74lvc family 74ABT FAIRCHILD FAIRCHILD MM74HC 4000B 74ABT 74AHC
Contextual Info: Semiconductors Innovative Logic Solutions from Philips Trend setting innovations in Logic Philips offers a huge portfolio of logic solutions ranging from mature to state-of-the-art families, covering 5 V all the way down to 1.8 V devices as well as specialty logic functions.

BF1207

Contextual Info: BF1207 Dual N-channel dual gate MOSFET Rev. 01 — 28 July 2005 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current

K 2611 MOSFET

Abstract: K 2611 MOSFET VOLTAGE RATING mosFET K 2611 9439 2n BF1206F Shortform Data and Cross References Mosfet UHF transistor handbook
Contextual Info: BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current

SN74HC logic family

Abstract: MM74VHCTXXXM SN74HC cross reference sot753 SOT886 MM74HC HEF4000 family 74lvc* dual register HEF4000 series 74AHC
Contextual Info: Semiconductors General-purpose logic solutions Commitment and innovation Commitment and innovation Philips is deeply committed to the logic market and continually invests in new process technologies and packaging facilities to ensure that our portfolio remains leading-edge. We offer a very broad variety

srf 2838

Contextual Info: Philips Sem iconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5737M FEATURES GENERAL DESCRIPTION • Balanced mixer with a common emitter input for band A single input The TDA5737M is a monolithic integrated circuit that

MARKING 5F SOT363

Abstract: BF1204 FET MARKING CODE km 1667
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Nov 13 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204