PHILIPS HI-PERFORMANCE AMPLIFIER Search Results

PHILIPS tda1514a

Abstract: TDA1514A hi-fi amplifier philips audio power amplifier ic databook SOT131 Hi-Fi TDA1514 TDA1514A Audio power amplifier IC SOT-131A MAY1992
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA1514A 50 W high performance hi-fi amplifier Product specification File under Integrated Circuits, IC01 May 1992 Philips Semiconductors Product specification 50 W high performance hi-fi amplifier TDA1514A GENERAL DESCRIPTION

TDA1514A Audio power amplifier IC

Abstract: 50W Hi-Fi AMPLIFIER 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM TDA1514A PHILIPS tda1514a 50w audio amplifier diagram philips audio power amplifier ic sot131a TDA1514 50W amplifier diagram
Contextual Info: Preliminary specification Philips Semiconductors Audio/Radio Products 50W high-performance hi-fi amplifier TDA1514A GENERAL DESCRIPTION The TDA1514A integrated circuit is a hi-fi power amplifier for use as a building block in radio, tv and other audio applications. The high performance of the IC meets the requirements of digital

PHILIPS tda1514a

Abstract: TDA1514A 50w audio amplifier diagram TDA1514 audio amplifier 50w hi-fi amplifier TDA1514A Audio power amplifier IC
Contextual Info: Preliminary specification Philips Semiconductors Audio/Radio Products TDA1514A 50W high-performance hi-fi amplifier G E N E R A L D E S C R IP T IO N The T D A 1 5 1 4 A integrated circuit is a hi-fi power a m p lifier fo r use as a building block in radio, tv

PHILIPS tda1514a

Abstract: TDA1514A
Contextual Info: Prelim inary specification Philips Sem ico n d u cto rs Audio/Radio Products 50W high-performance hi-fi amplifier TDA1514A G EN ER A L DESCRIPTIO N The T D A 1 5 1 4 A integrated c irc u it is a hi-fi power am p lifie r fo r use as a building block in radio, tv

Contextual Info: INTEGRATED CIRCUITS SA2421 2.45 GHz low voltage RF transceiver Preliminary specification Philips Semiconductors 2000 Feb 11 Philips Semiconductors Preliminary specification 2.45 GHz low voltage RF transceiver SA2421 DESCRIPTION PIN CONFIGURATION The SA2421 transceiver is a combined low–noise amplifier, receive

rf transceiver 2.4 ghz

Abstract: SA2420 SA2420DH TSSOP24 LNA Mixer VCO 2.4 GHz 2.45Ghz 10dbm oscillator 2sa2420 2.45Ghz oscillator circuit
Contextual Info: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive

rf transceiver 2.4 ghz

Abstract: 2.45GHZ balun "RF Transceiver" 2.2 ghz bandpass filter chip 5Ghz lna transistor datasheet TSSOP24 SA2420 SA2420DH 2.45Ghz oscillator circuit
Contextual Info: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive

350-400MHZ

Abstract: SA2420 SA2420DH TSSOP24 2SA2420 2.45Ghz 10dbm oscillator 2.45Ghz oscillator circuit
Contextual Info: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive

FC20U

Abstract: SA2420 SA2421 SA2421DH TSSOP24
Contextual Info: Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 DESCRIPTION PIN CONFIGURATION The SA2421 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buffer IC designed using a 20 GHz f j BiCMOS process, QUBiC2, for high-performance low-power

SA2420

Abstract: SA2421 SA2421DH TSSOP24 LNA Mixer 2.4 GHz 2.45Ghz oscillator circuit
Contextual Info: INTEGRATED CIRCUITS SA2421 Low voltage RF transceiver — 2.45GHz Objective specification Philips Semiconductors 1998 Aug 24 Philips Semiconductors Objective specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2421 PIN CONFIGURATION The SA2421 transceiver is a combined low-noise amplifier, receive

LNA Mixer VCO 2.4 GHz

Abstract: 2.1Ghz oscillator 2.45Ghz 10dbm oscillator PHILIPS CD 245 LNa - 2.45Ghz 2.45Ghz oscillator circuit
Contextual Info: Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buffer 1C designed for high-performance iow-power communication systems for

TRANSISTOR REPLACEMENT ECG 250

Abstract: ECG976
Contextual Info: PHILIPS E C G INC 17E ECG Semiconductors ECG976 OPERATIONAL AMPLIFIER FEATURES! 4 • OFFSET VOLTAGE 3 mV MAXIMUM OVER TEMPERATURE • INPUT CURRENT 100 nA MAXIMUM OVER TEMPERATURE • OFFSET CURRENT 20 nA MAXIMUM OVER TEMPERATURE. • GUARANTEED DRIFT CHARACTERISTICS

1316D

Abstract: VHF lna with agc GSM LNA NE600D SA600D vco fm 100mhz to 1ghz
Contextual Info: Philips Semiconductors Product specification 1GHz LNA and mixer NE/SA600 DESCRIPTION PIN CONFIGURATION The NE/SA600 is a combined low noise amplifier LNA and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 2dB noise

ECG947

Abstract: a7wr
Contextual Info: PHILIPS E C G INC 17E D • ECG947 DUAL-FREQUENCY COMPEN­ SATED OPERATIONAL AMPLIFIER semiconductors .370" r L - J s a ; 01A - J ^ .3 0 5 " ü “ .I8 0 " M A X . NON-INVERTINQ INPUT* UUU UÜU IN V ER TIN G INPUT B -4 .5 0 0 “ MIN. L G EN ERA L DESCRIPTION

Contextual Info: Philips Semiconductors Product specification Low-voltage LNA, mixer and VCO-1GHz SA620 PIN CONFIGURATION DESCRIPTION FEATURES The SA620 is a combined RF amplifier, VCO with tracking bandpass filter and mixer designed for high-performance low-power communication systems from 800-1200MHz.

Sii 1178

Abstract: SA611 SA611DK 2sa611 SR012
Contextual Info: Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA611 DESCRIPTION PIN CONFIGURATION The SA611 is a combined low-noise amplifier, and m ixer designed for high-perform ance low-power com m unication systems from 800-1000MHz. The low-noise pream plifier has a 1.7dB noise figure

800-1200MHZ

Abstract: NE600D SA600D RF TRANSISTOR 10GHZ low noise BiCMOS Qubic process 1316D VHF lna 30 to philips radio 900MHz ne605 RADIO fm RECEIVER IC UHF
Contextual Info: Philips Semiconductors RF Communications Products Product specification 1GHz LNA and mixer DESCRIPTION NE/SA600 FEATURES The NE/SA600 is a combined low noise amplifier LNA and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise

EF184

Abstract: tube em84 EF184 tube EM84 tube EF184 philips EM84 ef 184 socket noval tube cathodique PHILIPS tube cathodique culot
Contextual Info: PHILIPS |ef 184 SHARP CUT-OFF PENTODE for use as I.F. amplifier in tele­ vision receivers PENTHODE A PENTE CONSTANTE pour utilisation^comme ampli­ ficatrice M.F. dans des récepteurs de télévision PENTODE MIT KONSTANTER STEILHEIT zur Verwendung als ZFVerstärker in Fernsehempfängern

LNA Mixer VCO 2.4 GHz

Abstract: lna vco mixer 2GHz 800-1200MHZ DB-1S VCO 1.5 GHz REF-10 SA620 SA620DK SA7025 vco-1 philips
Contextual Info: Product specification Philips Semiconductors Low-voltage LNA, mixer and VCO-1GHz SA620 PIN CONFIGURATION DESCRIPTION FEATURES The SA620 is a combined RF amplifier, VCO with tracking bandpass filte r and m ixer designed for high-performance low-power communication systems from 800-1200MHZ.

t04 68 3 pin transistor

Abstract: PHILIPS UHF AMPLIFIER MODULE LIST BGY200 2222 861 phaseshift
Contextual Info: Product specification Philips Semiconductors UHF amplifier module BGY200 FEATURES DESCRIPTION • 7.2 V nominal supply voltage The BGY200 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit

ECG992

Abstract: TA-2500
Contextual Info: PHILIPS E C G INC 17E Û ECG bb53“i 2 â 000452b 1 Wt J^ ~ 7 ^ ~ 0 5 ^ 0 ECG992 Sem iconductors Features • Wide single supply voltage range or dual supplies 4 Independent Operational Amplifiers 14 13 12 I I 10 9 e — r .2 8 0 "< 7 .ll> MAX. 4V d c to 36V q c

philips 386 VT

Abstract: 148z P3NF
Contextual Info: Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO DESCRIPTION SA621 PIN CONFIGURATION The SA621 is a combined iow-noise amplifier, mixer and VCO designed for high-performance low-power communication systems from 800-1000MHZ. The Iow-noise preamplifier has a 1.7dB noise

Contextual Info: INTEGRATED CIRCUITS SA631 1GHz low voltage LNA and mixer Product specification 1998 Jan 08 IC17 Data Handbook Philips Semiconductors PHILIPS Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA631 PIN CONFIGURATION DESCRIPTION The SA631 is a combined low-noise BiCMOS amplifier, and mixer

LNA Mixer VCO 2.4 GHz

Abstract: 800-1200MHZ SA620 SA620DK SA7025 philips radio 900MHz
Contextual Info: INTEGRATED CIRCUITS SA620 Low voltage LNA, mixer and VCO – 1GHz Product data Supersedes data of 1993 Dec 15 Philips Semiconductors 2004 Dec 14 Philips Semiconductors Product data 1GHz low voltage LNA, mixer and VCO DESCRIPTION SA620 PIN CONFIGURATION The SA620 is a combined RF amplifier, VCO with tracking bandpass