PHILIPS MATV AMPLIFIERS Search Results

BFR134

Abstract: 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379
Contextual Info: Product specification Philips Semiconductors BFR134 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar

Contextual Info: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers

transistor 45 f 122

Abstract: BFQ54 sot 122 philips bfq54
Contextual Info: Philips Components BFQ54 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _À_ _ _ _ _ PNP 4 GHz WIDEBAND TRANSISTOR The BFQ54 is a pnp transistor in a SOT122 package, prim arily intended fo r MATV and microwave amplifiers, such as radar systems, spectrum analysers etc.

OM2070

Abstract: philips if catv amplifier
Contextual Info: Philips Semiconductors Product specification Wideband amplifier module OM2070 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-fiim substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

OM2070B

Abstract: philips if catv amplifier 9C42
Contextual Info: Philips Semiconductors Product specification Wideband amplifier module OM2070B DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-fiim substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

OM2082

Abstract: R767 R3R40 MGC961 S2112
Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module QM2082/61 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

philips if catv amplifier

Abstract: MSA806 gt 6312 diagram tv Philips 14 sf 829 SF 829 B uhf tv booster circuit diagram
Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module OM2082/60 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/60 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

1S1212

Abstract: zo 103 ma MC75
Contextual Info: Philips Semiconductors Product specification Wideband amplifier module OM2Q63 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV systems and as a general purpose amplifier for VHF and UHF

uhf tv booster circuit diagram

Abstract: philips if catv amplifier 4894 gt 6312 diagram tv Philips 14
Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module OM2081/60 DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit form on a thin-fiim substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

MSA338

Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q81/87 DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

4894

Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q81/86 DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

MSA806

Abstract: philips if catv amplifier gt 6312 philips MATV amplifiers
Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q82/86 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

ST T4 0570

Abstract: 4894 HM 1211 BP317 philips MATV amplifiers
Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/60 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

BFG23

Contextual Info: • bbSBTBl 0017b47 3 ■ N AMER PHILIPS/DISCRETE BFG23 SSE D J V T-3l-i£r P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as MATV and CATV systems, up to 2 GHz.

Contextual Info: N AMER PHILIPS/DISCRETE b'JE T> bbsa^ai 003245D fiS3 IAPX U M d /u HYBRID INTEGRATED CIRCUIT VHF/UHF W IDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV and CATV systems, and as

Contextual Info: I I N AnER PHILIPS/DISCRETE bRE D bbSB'm 0D3E4flb JOl 11 APX O M 2060 HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as preamplifier in MATV systems, and as general-purpose ampli­

HYBRID OM2060

Abstract: OM2060 philips om2060
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • ^53^31 0D3E4flb TGT * A P X OM2060 HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as preamplifier in MATV systems, and as general-purpose ampli­

Contextual Info: N AMER PHILIPS/D'ISCRETE 25E D • bbS3131 GQlfi425 i ■ J OM339 t 7 y -0 7 -0 1 - HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in the hybrid integrated circuit technique, designed fo r use in mast­ head booster-amplifiers, as amplifier in MATV systems, and as general-purpose amplifier fo r v.h.f. and

Om2061

Contextual Info: 5SE D N AMER PHILIPS/DISCRETE • bbSBTBl DOlfl1!? =1 ■ OM2061 T - 'V \ - 0 ° l- 0 \ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV systems, and as generalpurpose amplifier for v.h.f. and u.h.f, applications.

BFR92A

Abstract: bft92 die transistor P2P marking code P2p SOT23 BFR90A BFT92 TRANSISTOR FQ
Contextual Info: DISCRETE SEMICONDUCTORS BFR92A NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 Philips Semiconductors 1997 Oct 29 PHILIPS Philips Semiconductors Product specification NPN 5 GHz wideband transistor

BFQ34T

Abstract: BFQ54T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor
Contextual Info: Philips Semiconductors bbS3^3]i 0 0 3 1 5 ^ 1 3bT BBAPX Product specification PNP 4 GHz wideband transistor ^ ^ N DESCRIPTION A ME R BFQ54T P H IL IP S /D IS C R E T E b^E ]> PINNING PNP transistor in a plastic SOT37 package. PIN It is primarily intended for use in

BFR90A

Abstract: BFR92A BFT92 A18 transistor
Contextual Info: N AMER PHILIPS/DISCRETE 2 5E D • ^53^31 001fl0b3 4 WÊ BFR92A T X 3 M ? N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is primarily intended for use in v.h.f./u.h.f. broadband amplifiers. The transistor features: • low noise;

BFQ34

Abstract: transistor marking N1 BFQ34/01,112
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4