PHOTO DIODE PIN 10 GBPS Search Results

photo diode

Abstract: MXP4003 photo diode 10 Gbps pin photo diode MXP4000 sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode
Contextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

Contextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes

25um

Contextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes

ED 08 diode

Abstract: ED 03 Diode
Contextual Info: Obsolete Product – not recommended for new design MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the

Contextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

VCSEL array, 850nm flip

Abstract: MXP7001
Contextual Info: MXP7001 I N T E G R A T E D P R O D U C T S 10 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission

VCSEL array, 850nm flip

Abstract: MXP7001 GaAs array, 850nm
Contextual Info: MXP7001 I N T E G R A T E D P R O D U C T S 10 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission

PDF PIN PHOTO DIODE DESCRIPTION

Abstract: OD9602N OD9604N photo diode circuit Photo Modules OD9601N photo amplifier application circuit 8pin
Contextual Info: DATA SHEET O K I L A S E R P R O D U C T S OD9601N 1.25 Gbps OD9602N (622 Mbps) OD9604N (2.488 Gbps) + 3.3-V Photo Diode Preamp Modules February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

amplifier CV 203

Abstract: VCSEL array, 850nm flip GaAs array, 850nm vcsel array Photo Diode
Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

VCSEL array, 850nm flip

Abstract: VCSEL array, 850nm, flip chip amplifier CV 203 VCSEL array, 850nm GaAs array, 850nm PIN photodiode 850nm LX3044 LX3045 LX3046 PIN PHOTO DIODE
Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

amplifier CV 203

Abstract: VCSEL array, 850nm flip GaAs array, 850nm diode array die VCSEL array, 850nm, flip chip
Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

VCSEL array, 850nm flip

Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

InGaAs Photodiode 1550nm

Abstract: photodiode sensitivity 1550nm 2
Contextual Info: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar

1550nm VCSEL

Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2
Contextual Info: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar

vcsel receiver

Abstract: MXP7002 IR 2E09 850nm 300 nA photo Diode
Contextual Info: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission

MXP7002

Abstract: IR 2E09
Contextual Info: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission

construction of photo diode

Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
Contextual Info: MXP7A02 – 1x4 Array 3.125 Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks

PIN PHOTO DIODE

Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

Contextual Info: LX3051 3.125 Gbps TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transceivers, transponders, optical

CMS101K2KC

Abstract: KGA4130D Tecdia transimpedance amplifier 5 GHz GTD-18408
Contextual Info: Preliminary Data Sheet December 1999 1KGA4130D 10Gbps AGC Transimpedance Amplifier IC DESCRIPTION Oki's 10 Gbps transimpedance amplifier is fabricated 0.1µm gate length P-HEMTs for high-speed optical communication. The IC has a large transimpedance, high sensitivity and a wide dynamic range.

DIODE ED 11

Contextual Info: Obsolete Product - not recommended for new design MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION 100µm aperture Semi-insulating substrate High Responsivity Low Dark Current High Bandwidth

PIN photodiode responsivity 1550nm 1.1

Abstract: PIN photodiode InGaAs 1550nm PIN Photodiode 1550nm sensitivity photodiode 1550nm 4 Ghz InGaAs Photodiode 1550nm PIN photodiode responsivity 1550nm 2,5 GHz InGaas PIN photodiode flipchip PIN Photodiode 1310nm
Contextual Info: Obsolete Product – not recommended for new design LX3051 3.125 Gbps TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ LX3051 single die Coplanar Waveguide , 50 ohm High Responsivity Low Dark Current

1550nm photo diode for 10Gbps

Abstract: MXP4003 MXP4005
Contextual Info: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. . The MXP400X series of photo diodes are currently offered in die