PHOTO NPN Search Results

color sensitive PHOTO TRANSISTOR

Abstract: Rise time of photo transistor KDT3002A npn photo transistor 3mm photo transistor
Contextual Info: Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in Φ3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor

Contextual Info: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor

Contextual Info: N EC ELECTRONICS INC 30E D L^27S55 0 02T77b b • T " .4 |-7 5 PHOTO INTERRUPTER PS4008 PHOTO INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS The PS4008 photo coupled interrupter module containing a GaAs in millimeters inches light em itting diode and an NPN silicon photo-transistor,

transistor ZR

Contextual Info: N E C 30E.D ELECTRONICS INC • b 457555 005T7â5 1 ■ PHOTO IN TERRUPTER PS4502 PHOTO INTERRUPTER DESCRIPTIO N PACKAG E DIMENSIONS in millimeters inches The PS4502 photo coupled interrupter module containing a GaAs light emitting diode and an NPN silicon darlington connected photo­

DIODE S6 73

Contextual Info: N E C ELECTRONICS INC 3QE D • b4S7S5S 002^050 T ■ -p -lj-l-*J 3 PHOTO SENSER _ PS6001A PHOTO REFLECTIVE SE N SE R D ESCRIPTIO N The PS6001A it a photo reflective senser containing a GaAs light emitting diode and an NPN silicon photo-transistor.

K 4005 transistor

Abstract: "Photo Interrupter" PS4001 ir 4009 pa 4009 transistor 4003 K 4005 ps4009
Contextual Info: NEC PHOTO INTERRUPTERS ELECTRON DEVICE p s 400 i , p s 4003, p s 4005,p s 4007, p s 4009 PHOTO INTERRUPTER NEPOC SERIES DESCRIPTION The PS4001, PS4003, PS4005, PS4007, PS4009 are photo coupled interrupter modules containing a GaAs light emitting diode and an NPN silicon darlington connected photo-transistor.

03F1

Abstract: TLN103A TPS603A
Contextual Info: TOSHIBA TPS603A TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS603A PHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION CONTROLLER OF HOME ELECTRIC EQUIPM ENT DETECTOR FOR STOBOSCOPIC CONTROL

transistor 1052

Abstract: WPDT-317D photo darlington sensor Rise time of photo transistor p317d
Contextual Info: Photo Transistor Waitrony Module No.: WPDT-317D 1. General Description: The WPDT-317D is ; output NPN photo dai transistor mounted in an end black epoxy package. This photo darlington transistor narrow angular response. Dimensions 2. Features > > ^ > Compact 03mm

"Photo Interrupter"

Abstract: photo diod PS4501
Contextual Info: E C ELECTRONICS INC 30E D • k4275S5 002^700 fi ■ T"'-*+1 - X 3 PHOTO INTERRUPTER PS4501 PHOTO IN T E R R U P T E R DESCRIPTION PACKAGE DIMENSIONS The PS4501 photo coupled interrupter module containing a GaAs in m illim tttft light emitting diode and an NPN silicon photo-transistor.

waitrony

Abstract: WPDT-270 photo darlington sensor
Contextual Info: Photo Transistor Waitrony Module No.: WPDT-270 1. General Description: The WPDT-270 is a high output NPN photo darlington transistor mounted in a water clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.

toshiba 4b1

Abstract: 4b1 toshiba photo interrupter darlington sensor TLN107A TPS617 TLN107
Contextual Info: TO SHIBA TPS617 TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR Unit in mm PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT Visible light cut type black package High sensitivity : I l = 1.4mA (TYP.)

PHOTO TRANSISTOR

Abstract: Rise time of photo transistor photo transistor high current
Contextual Info: PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MB 1. GENERAL DESCRIPTION The HI-T70MB is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with clear epoxy encapsulation. This photo transistor have awide angular response and

NEC PS2001B

Abstract: PS2001B ps2001
Contextual Info: SEC PHOTO BECTM M DEVICE COUPLER PS2001B PHOTO COUPLER INDUSTRIAL USE -NEPO C SERIES - DESCRIPTION The PS2001B is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor. FEATURES PACKAGE DIMENSIONS • High isolation voltage

Contextual Info: TOSHIBA TPS603A TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS603A PHOTO TRANSISTOR FOR PHOTO SENSOR U nit in mm PHOTOELECTRIC COUNTER 0 3.0-t 0.3 VARIOUS KINDS OF READERS POSITION DETECTION 2 ÛO CONTROLLER OF HOME ELECTRIC EQUIPMENT “H ci-H

TPS607A

Abstract: photo interrupter darlington sensor
Contextual Info: TOSHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS607A PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT • High sensitivity ; lL = 2mA TYP, • The same external shape as the infrared LED TLN107A, and is

photo interrupter darlington sensor

Contextual Info: T O SH IB A TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 7 PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT • Visible light cut type black package • High sensitivity : I l = 1.4mA (TYP.)

317 TRANSISTOR

Abstract: OF IC 317 ML 317 WPDT-317
Contextual Info: Photo Transistor Waitrony M odule No.: W PD T-317 1. G eneral D escription: The WPDT-317 is a high output NPN photo darlington transistor mounted in a clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.

photo interrupter darlington sensor

Abstract: toshiba 4b1 TPS607A tps607 04b1 "Photo Interrupter" 4b1 toshiba TLN107A AUTOMATIC CONTROL UNIT
Contextual Info: TOSHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS607A PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER Unit in mm PHOTOELECTRIC COUNTER 4 POSITION DETECTION AUTOMATIC CONTROL UNIT +0 ö 4 .4 -0 .2 +0 3-0 .2 2.4 ± 0 . 3

TPS607A

Contextual Info: TO SHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR T• P <; ■ MF fi n 7 » »a » PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER U nit in mm 4 PHOTOELECTRIC COUNTER POSITION DETECTION -4r AUTOMATIC CONTROL UNIT +0 4.4 -0.2

TLN101A

Abstract: TPS601A-B TPS601A tps604 toshiba TLN108 TPS604 photo 2870
Contextual Info: TPS601A TO SHIBA TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS601A PHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mm PHOTOELECTRIC COUNTER POSITION DETECTION VARIOUS KINDS OF READERS • TO-18 metal package • High sensitivity. • Sharp directivity. Incident light can be effectively used.

Contextual Info: PHOTO TRANSISTOR IflE D MARKTECH INTERNATIONAL 57^55 G D D O M G 1! M MTD6180 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • OPTICAL SWITCH • INTERRUPTER • TAPE, CARD READERS FEATURES SYMBOL • Spectrally and mechanically matched with

Contextual Info: PHOTO TRANSISTOR -^q,u 1ÔE D • STTÌbSS QQOOMQS MTD6060 SILICON NPN EPITAXIAL PLANAR -1“ I 1 MARKTECH INTERNATIONAL SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR w ^ > - cj »T 77R M N APPLICATIONS • OPTICAL SWITCH • TAPE, CARD READERS • POSITION SENSOR

dual photodiode

Abstract: photodiode "far infrared" S8030 KPIC1028E01 S8064 SE-171
Contextual Info: PHOTO IC Photo IC for rangefinder NEW S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain

transistor cms

Abstract: mtd6040 MTE1010A PHOTO TRANSISTOR
Contextual Info: PHOTO TRANSISTOR MARKTECH INTERNATIONAL IflE D STTTbSS G O G O m s MTD6040 u 3 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • OPTICAL SWITCH • TAPE, CARD READ ERS • VELOCITY SENSO R FEATURES • High sensitivity: l|_=250/iA Typ. .