EE-125
Abstract: photo transistor high current photo transistor KDT5001A PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor"
Text: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor
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KDT5001A
KDT5001A
EE-125
photo transistor high current
photo transistor
PHOTO TRANSISTOR current to voltage
photo-transistor
PK640
"photo transistor"
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PHOTO TRANSISTOR
Abstract: 640nm "photo transistor" photo ic KDT5001A
Text: NEW PRODUCT Silicon photo transistor KDT5001A Description The KDT5001A is high sensitivity silicon photo transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features - Higly sensitive photo transistor.
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KDT5001A
KDT5001A
640nm
PHOTO TRANSISTOR
640nm
"photo transistor"
photo ic
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT5001A Dimensions The KDT5001A is high sensitivity silicon photo [Unit : mm] transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor
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KDT5001A
KDT5001A
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor
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KDT5001A
KDT5001A
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color sensitive PHOTO TRANSISTOR
Abstract: Rise time of photo transistor KDT3002A npn photo transistor 3mm photo transistor
Text: Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in Φ3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
color sensitive PHOTO TRANSISTOR
Rise time of photo transistor
npn photo transistor
3mm photo transistor
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
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PHOTO TRANSISTOR
Abstract: Rise time of photo transistor photo transistor high current
Text: PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MB 1. GENERAL DESCRIPTION The HI-T70MB is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with clear epoxy encapsulation. This photo transistor have awide angular response and
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HI-T70MB
HI-T70MB
200Lux
2000Lux
PHOTO TRANSISTOR
Rise time of photo transistor
photo transistor high current
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PT008-SMC PHOTO-TRANSISTOR PT008-SMC SMD TYPE PHOTO-TRANSISTOR PT008-SMC is a surface mount type photo-transistor featuring high photocurrent. This phototransistor consists of a chip with 0.6x0.6mm active area mounted in a ceramic package and covered with silicone.
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PT008-SMC
PT008-SMC
1000Lx
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Untitled
Abstract: No abstract text available
Text: Photo Interrupter KIT3001B Description The photo interrupter high-performance standard type KIT3001B combines a high-output GaAs IRED with a High sensitivity photo transistor. Features PWB direct mount type. 3.0mm gap. Snap-in mount. With the installation positioning boss.
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KIT3001B
21-JAN-11
KSD-XXXXXX-000
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Untitled
Abstract: No abstract text available
Text: Photo Transistor Product No: M T D6000PT-T Peak Sensitivity Wavelength: 880nm The MTD6000PT-T is a photo transistor in a hermetically sealed pigtail package. It is well suited for high reliability and high sensitivity applications. FEATURES APPLICATIONS > High Reliability in Demanding Environments
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D6000PT-T
880nm
MTD6000PT-T
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MTD8000M3B-T
Abstract: No abstract text available
Text: Photo Transistor Product No: M T D 8 000M3B-T Peak Sensitivity Wavelength: 880nm The MTD8000M3B-T is a photo transistor in a ceramic package. It is well suited for high reliability and high sensitivity applications. FEATURES APPLICATIONS > High Reliability in Demanding Environments
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000M3B-T
880nm
MTD8000M3B-T
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5192K
Abstract: NJL5190K NJL5190K-F NJL5192K NJL5192K-F
Text: NJL5190K/92K GENERAL PURPOSE PHOTO REFLECTOR GENERAL DESCRIPTION The NJL5190K/5192K are the single-in-line miniature and thin general purpose photo reflectors, which consist of high output infrared emitting and high sensitive Si photo transistor, and attain high
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NJL5190K/92K
NJL5190K/5192K
5192K
NJL5190K
NJL5190K-F
NJL5192K
NJL5192K-F
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PT008-SMC
Abstract: transistor smd .PB PT008-SM ceramic phototransistor PB SmD TRANSISTOR
Text: epitex Opto-Device & Custom LED PHOTO-TRSNSISTOR PT008-SMC Lead Pb Free Product – RoHS Compliant PT008-SMC SMD TYPE PHOTO-TRANSISTOR PT008-SMC is a surface mount type photo-transistor featuring high photocurrent. This phototransistor consists of a chip with 0.6x0.6mm active area mounted
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PT008-SMC
PT008-SMC
1000Lx
transistor smd .PB
PT008-SM
ceramic phototransistor
PB SmD TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Photo Transistor M T D8600N-T Product No: Peak Sensitivity Wavelength: 880nm The MTD8600N-T is a photo transistor in a TO-18 metal can domed package. It is well suited for high reliability and high sensitivity applications. FEATURES APPLICATIONS > High Reliability in Demanding Environments
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D8600N-T
880nm
MTD8600N-T
TD8600N-T
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Untitled
Abstract: No abstract text available
Text: Photo Transistor Product No: M T D8000N4-T Peak Sensitivity Wavelength: 880nm The MTD8000N4-T is a photo transistor in a TO-18 metal can domed package. It is well suited for high reliability and high sensitivity applications. FEATURES APPLICATIONS > High Reliability in Demanding Environments
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D8000N4-T
880nm
MTD8000N4-T
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PHOTO-DIODE PD006-SMT PRELIMINARY Lead Pb Free Product – RoHS Compliant PD006-SMT SMD Type PHOTO-TRANSISTOR PD006-SMT is a surface mount type photo-transistor featuring high photocurrent. This phototransistor consists of a chip with 0.6x0.6mm active area mounted
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PD006-SMT
PD006-SMT
44mmx0
1000Lx
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4 channel triac opto
Abstract: transistor transistor AC Switch OPTO- DARLINGTON dual channel opto triac ac opto triac Photo Relays DIP SWITCH 10 PIN photo transistor zero voltage AC 8 PIN
Text: Contents INDEX OPTO ISOLATORS Photo Transistor 4 & 6 pin DIP FET Couplers High Collector / Emitter Voltage 8 pin SOIC Photo Transistor In Line Packages (4,8,16 pin DIP) Dual Channel Photo Transistor Quad Channel Photo Transistor 4 Photo Transistor Detector
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waitrony
Abstract: WPDT-270 photo darlington sensor
Text: Photo Transistor Waitrony Module No.: WPDT-270 1. General Description: The WPDT-270 is a high output NPN photo darlington transistor mounted in a water clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.
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WPDT-270
WPDT-270
PDT-270
waitrony
photo darlington sensor
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Untitled
Abstract: No abstract text available
Text: NJL5156M HIGH INPUT CURRENT MINI PHOTO COUPLER • GENERAL DESCRIPTION OUTLINE typ. The NJL5156M is high input current package small dual-in-line photo coupler, which consist of high power infrared emitting diode and high sensitve Si photo transistor. ■ FEATURES
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NJL5156M
NJL5156M
fra-25+
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317 TRANSISTOR
Abstract: OF IC 317 ML 317 WPDT-317
Text: Photo Transistor Waitrony M odule No.: W PD T-317 1. G eneral D escription: The WPDT-317 is a high output NPN photo darlington transistor mounted in a clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.
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WPDT-317
WPDT-317
317 TRANSISTOR
OF IC 317
ML 317
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toshiba 4b1
Abstract: 4b1 toshiba photo interrupter darlington sensor TLN107A TPS617 TLN107
Text: TO SHIBA TPS617 TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR Unit in mm PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT Visible light cut type black package High sensitivity : I l = 1.4mA (TYP.)
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TPS617
TLN107A,
TLN107A
driven40mm
TPS617
toshiba 4b1
4b1 toshiba
photo interrupter darlington sensor
TLN107
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TPS607A
Abstract: photo interrupter darlington sensor
Text: TOSHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS607A PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT • High sensitivity ; lL = 2mA TYP, • The same external shape as the infrared LED TLN107A, and is
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TPS607A
TLN107A,
TLN107A
--40mm
TPS607A
500//A
photo interrupter darlington sensor
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TLN101A
Abstract: TPS601A-B TPS601A tps604 toshiba TLN108 TPS604 photo 2870
Text: TPS601A TO SHIBA TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS601A PHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mm PHOTOELECTRIC COUNTER POSITION DETECTION VARIOUS KINDS OF READERS • TO-18 metal package • High sensitivity. • Sharp directivity. Incident light can be effectively used.
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TPS601A
TPS604
TLN201
TPS601A
226//A
TLN101A
TPS601A-B
tps604 toshiba
TLN108
photo 2870
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transistor cms
Abstract: mtd6040 MTE1010A PHOTO TRANSISTOR
Text: PHOTO TRANSISTOR MARKTECH INTERNATIONAL IflE D STTTbSS G O G O m s MTD6040 u 3 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • OPTICAL SWITCH • TAPE, CARD READ ERS • VELOCITY SENSO R FEATURES • High sensitivity: l|_=250/iA Typ. .
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MTD6040
250/iA
MTE1010A.
S0UHCE-MTE1010Â
transistor cms
mtd6040
MTE1010A
PHOTO TRANSISTOR
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