PHOTODIODE 1550 NEP Search Results

IAG 080

Abstract: photodiode ingaas ghz
Contextual Info: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited

Contextual Info: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited

Contextual Info: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited

ISO 2768-mk

Abstract: PRBS-31 STM-16 ZL60011 20034
Contextual Info: ZL60011 1310 nm, 1550 nm 2.5 Gbps PIN Preamplifier with Photo-current Monitor Data Sheet July 2004 Ordering Information ZL60011/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3 V device which contains a PIN photodiode and a low noise transimpedance with

MC2045

Abstract: ZL60009
Contextual Info: ZL60009 PIN/Preamp 1300 nm-1550 nm Data Sheet June 2004 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3 V device which contains a PIN photodiode and a low noise transimpedance amplifier assembled in a TO-46 package. It is designed

Contextual Info: ZL60009 PIN/Preamp 1300 nm-1550 nm Data Sheet June 2004 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3 V device which contains a PIN photodiode and a low noise transimpedance amplifier assembled in a TO-46 package. It is designed

Contextual Info: PHOTODIODE InGaAs APD with preamp G9910-14 ROSA type, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High gain: 15 V/mW λ=1550 nm l Differential output l Responsivity: -5 to -33 dBm l Optical return loss: 35 dB l Isolation type: Housing and signal ground are

PerkinElmer tr 1700

Abstract: PerkinElmer Avalanche Photodiode
Contextual Info: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche

Contextual Info: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The

InGaas PIN photodiode, 1550 NEP

Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
Contextual Info: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at

IAG 080

Contextual Info: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at

photodiode 1550nm nep

Contextual Info: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input

InGaas PIN photodiode, 1550 NEP

Abstract: quad photodiode psd quadrant photodiode InGaas PIN photodiode, 1550 sensitivity photodiode 850nm nep UDT Sensors Photodiode, 1550nm NEP InGaas PIN photodiode chip quad photodiode PIN photodiode 850nm
Contextual Info: InGaAs Quad Detectors 4 Quadrant Detectors for NIR Wavelengths The UDT InGaAs Quad series of Photodetectors allow position measurements of wavelengths from 850nm to 1700nm. The 4 Quadrant devices made of InGaAs come in 1mmφ InGaAs-1000-4 and 3mmφ (InGaAs-3000-4) sizes. They exhibit an excellent combination of High

Microwave Components

Contextual Info: Design Guide RF and Microwave Fiber-Optics MICROWAVE is switched on and off to send digitally coded information Introduction through a fiber to a photodiode receiver. In 1984 Ortel Corporation began developing and producing lasers and detectors for linear fiberoptic links. Since

Contextual Info: Pigtailed InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 276-339761-000 Description CMC Electronics’ 264-339761-000 uses an InGaAs APD with a GaAs FET frontend transimpedance amplifier in a DIL-14 package. The InGaAs APD has a low ionization ratio for lower shot noise. The

Contextual Info: E G & G/CANADA/OPTOELEK 47E D 3 0 3 0 b l 0 D00033fl 2 • CANA ■ J20Si and J16Si Series ry/ 55 Applications • Two-Color Temperature Measurements • Dual-Wavelength Power Meters Features • Dual-Wavelength Detection • Parallel Outputs • Si/Si or Si/Ge Sandwich

InGaas PIN photodiode, 1550 NEP

Contextual Info: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ ZL60015

8A4 diode

Abstract: J20Si DIODE GE GE power diode Ge dual photodiode photodiode ge J20Si-SA4-R03M photodiode 1550 NEP pin Photodiode 1550 nm two color photodiode j20si
Contextual Info: E G & G/ CANADA/ OPTOELEK 47E 3030bl0 D D00Q33fl 2 • J20SÌ and J16SÌ Series T Features Applications • • • • • Dual-W avelength Detection P arallel Outputs Si/Si or S i/G e Sandwich CANA V/-55 - Two-Color Temperature M easurem ents Dual-W avelength Power Meters

InGaas PIN photodiode, 1550 NEP

Abstract: Photodiode receiver specification for 1550 nm ISO 2768-mk ZL60015 ZL60015TBD ZL60015TDDB ZL60015TEDB photodiode 1550 NEP InGaAs 1550 photodiode transimpedance amplifier "ISO 2768-mK"
Contextual Info: ZL60015 Optical Receiver. 1310/1550 nm, 2.5 Gbps PIN + Pre-amp with Photocurrent Monitor Data Sheet January 2005 Ordering Information ZL60015TBD, TO-46 with lens The ZL60015 is also available assembled in standard optical receptacles, or with a 1m 9µm fiber

opto 2561

Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
Contextual Info: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging

InGaas PIN photodiode, 1550 NEP

Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
Contextual Info: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

IAG200

Abstract: ABC550-04
Contextual Info: Detectors H0 Series Silicon and InGaAs-APD Receiver Description The H0-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in laser range finding, LIDAR, medical and analytical applications. Housed in a modified 5 pin TO-46 package they offer bandwidths up to 1 GHz and a single ended output. Higher bandwidth can be achieved

IAG080H0

Abstract: IAG080
Contextual Info: Detectors H0 Series Silicon and InGaAs-APD Receiver Description The H0-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in laser range finding, LIDAR, medical and analytical applications. Housed in a modified 5 pin TO-46 package they offer bandwidths up to 100 MHz and a single ended output.