PHOTODIODE 1550NM NEP Search Results

Contextual Info: PRODUCT INFORMATION 1300nm 8C483 1550nm PIN/Preamp Datacom This device contains a PIN photodiode, a low noise GaAS transimpedance amplifier with differential limiting amplifier assembled in a TO-46 package. It is designed for Fibre Channel and Gigabit Ethernet. Its

top marking 293

Abstract: TO46 package LED 1300 nm
Contextual Info: PRODUCT INFORMATION 1300nm 8C443 1550nm PIN/Preamp Datacom, Telecom This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for FDDI, ATM and SDH/Sonet up to 155 Mbps. The AGC Automatic Gain Control

8C443

Contextual Info: PRODUCT INFORMATION 1300nm 8C443 1550nm PIN/Preamp Datacom, Telecom This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for FDDI, ATM and SDH/Sonet up to 155 Mbps. The AGC Automatic Gain Control

ISO-2768-mK

Abstract: GR468-CORE ZL60007 ISO-2768-m
Contextual Info: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance

InGaas PIN photodiode, 1550 NEP

Abstract: ISO 2768-mk PIN Photodiode 1550nm photodiode responsivity 1550nm PIN-TIA GR468-CORE ZL60007 InGaAs photodiode 1310 1550 InGaAs 1550 photodiode transimpedance amplifier P InGaAs photodiode TO-46
Contextual Info: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance

8C489

Abstract: TO46 package
Contextual Info: PRODUCT INFORMATION 1300nm 8C489 1550nm PIN/Preamp E V ATI ENT Datacom This device contains a PIN photodiode and a low noise transimpedance amplifier with Automatic Gain Control AGC assembled in a TO-46 package. It is designed for FDDI, ATM and SDH/Sonet at 155Mbps.

Contextual Info: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance

photodiode 1550nm nep

Abstract: GR468-CORE ZL60007 InGaAs photodiode 1310 1550
Contextual Info: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet May 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance

Contextual Info: ZL60007 1310nm, 1550nm 622Mbps PIN with Preamplifier Data Sheet April 2003 Ordering Information ZL60007/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • This optical receiver is a 3.3V device which contains an InGaAs PIN photodiode and a transimpedance

photodiode sensivity 1550nm 2

Contextual Info: ZL60006 1310nm, 1550nm 2.5Gbps PIN with Preamplifier Data Sheet April 2003 Ordering Information ZL60006/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a PIN photodiode, a low noise transimpedance amplifier

8C447

Contextual Info: PRODUCT INFORMATION 1300nm 8C447 1550nm PIN/Preamp Datacom, General Purpose, Analog Applications This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance FDDI and ATM up to 155 Mbps. The preamplifier’s linearity and absence of

8C447

Abstract: top marking 293
Contextual Info: PRODUCT INFORMATION 1300nm 8C447 1550nm PIN/Preamp Datacom, General Purpose, Analog Applications This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance FDDI and ATM up to 155 Mbps. The preamplifier’s linearity and absence of

Contextual Info: ZL60009 1310nm, 1550nm 155Mbps PIN with Preamplifier Data Sheet April 2003 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a PIN photodiode and a low noise transimpedance

ISO 2768-mk

Abstract: photodiode 1550nm nep 1300nm-1550nm 1550nm photodiode nep MC2045 ZL60009 04078
Contextual Info: ZL60009 PIN/Preamp 1300nm-1550nm Data Sheet October 2003 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3V device which contains a PIN photodiode and a low noise transimpedance amplifier assembled in a TO-46 package. It is designed

1550nm photodiode nep

Abstract: photodiode 1550nm nep MC2045 ZL60009
Contextual Info: ZL60009 PIN/Preamp 1300nm-1550nm Data Sheet October 2003 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3V device which contains a PIN photodiode and a low noise transimpedance amplifier assembled in a TO-46 package. It is designed

diode d1n914

Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

C30817E

Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

photodiode 1550nm nep

Contextual Info: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input

J16-18A-R01M-HS

Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
Contextual Info: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a­

FDS010

Abstract: FDS100 circuit PDA155 FGA10 PDA255 FDS100 THORLABS FGA10 Photodiode 1550nm bandwidth PDA400 PDA55
Contextual Info: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-300-3600 FGA10 InGaAs Photodiode -High Responsivity -Low Capacitance: High Speed Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω : Bandwidth (RL=50Ω, -3dB,5V):

GR-468-CORE

Abstract: STM-16 ZL60006 ZL60006TDD ZL60006TED ISO 2768 mk
Contextual Info: ZL60006 1310nm, 1550nm 2.5Gbps PIN with Preamplifier Data Sheet November 2003 Ordering Information ZL60006TED SC Housing ZL60006/TBD TO-46 with lens ZL60006TDD ST Housing -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a

D400F

Abstract: D400FC FGA04 FGA10 photodiode responsivity 1550nm with FC connector photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth Photodiode, 1550nm NEP THORLABS FGA10 1550nm photodiode 2GHz
Contextual Info: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-300-3600 FGA04 InGaAs Photodiode High Responsivity Low Capacitance: High Speed Fiber Compatible with FC Connector Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω :

Zarlink Semiconductor

Contextual Info: ZL60006 1310nm, 1550nm 2.5Gbps PIN with Preamplifier Data Sheet November 2003 Ordering Information ZL60006TED SC Housing ZL60006/TBD TO-46 with lens ZL60006TDD ST Housing -40°C to +85°C Features Description • • • • • • This optical receiver is a 3.3V device which contains a

J16-18A-R01M-SC

Abstract: J16-8SP-R05M J16-5SP-R02M-HS J16-5SP-R02M-SC photodiode ge J16-18A-R01M photodiode germanium J16-18A-R01M-HS J16-5SP-R03M-HS germanium diode equivalent
Contextual Info: Germanium Detector Operating Notes 0.8 to 1.8 ¡im General Responsivity Operating Circuit J1 6 S eries d etectors are hig h -q u ality G erm an iu m photodiodes designed for th e 800 to 1800 n m w avelen g th range. T he eq u iv alen t circu it for a G erm a­