PHOTODIODE 256 ELEMENTS Search Results

Contextual Info: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed

S8865-256G

Contextual Info: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed

photodiode 256 elements

Abstract: PHOTODIODE 4 CHANNEL ARRAY 74HC32 S8865-256G S8865-256 KMPDC0222EA
Contextual Info: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed

photodiode InGaAs NEP

Contextual Info: Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging from 800 nm to 1700 Multiplexed InGaAs PIN Photodiode Array MXA-256-X 800 - 1700 nm nm. The array has 256 elements IN A

opto 2561

Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
Contextual Info: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging

InGaas PIN photodiode, 1550 NEP

Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
Contextual Info: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging

256CH

Abstract: 9 ELEMENT photoDIODE ARRAY simple Photodiode
Contextual Info: Photodiode arrays with ampli¿er S8865-64/-128/-256 Photodiode array combined with signal processing IC The S8865-64/-128/-256 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and hold circuit,

R800-10-012-20-001

Abstract: S8865-64 16 Photodiode-Array S8865 C9118 S8865-64G S8866-64 S8866-64G-02 C9118 S8865-128 S8865-256
Contextual Info: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,

Contextual Info: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,

7404 not gate

Abstract: lm 7404 LM 7408 RL2048dag 7408 12V lm 7404 and pin configuration rl1024dag-111 RETICON RL 1024 rl1024dag 7408 ttl family
Contextual Info: Introduction D Series PerkinElmer's D Series image sensors 256, 512, 1024, 2048 Elements Photodiode Array are high-speed, self-scanned, chargecoupled photodiode CCPD arrays. The EVERYTHING IN A D Series Family, consisting of the NEW Standard and Wide Aperture image

epitaxx

Contextual Info: EPITAXX INC 33b04Qb S 4E D EPITAXX DOODGT? M ETX 30 & 100MLA 64,128 & 256 T-m - ss InGaAs Multiplexed Linear Photodiode Arrays Description: EPITAXX ETX 30MLA 64,128 and 256 and ETX 100MLA 64 and 128 are linear arrays of 64,128 and 256 elements. The pixel cross-section of the ETX 30 MLA is 30x30 microns;

Contextual Info: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be

Contextual Info: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be

Contextual Info: Photodiode arrays with amplifiers S11865-64/-128/-256 S11866-64-02/-128-02 Photodiode arrays combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products S8865/S8866 series . The signal processing IC chip is formed by CMOS process

RETICON 128 application notes

Contextual Info: K Series JLeGsB RET1CON Wide Aperture Linear Photodiode Array W Introduction The EG&G Reticon K Series linear photodiode arrays are designed for applications that require higher sensitivity and wider dynamic range than is available with square element geometries. Devices in this series contain 128, 256, 512 or

RL1024KAQ011

Abstract: RL0256
Contextual Info: K Series J}^EBnG RETICON Wide Aperture Linear Photodiode Array Introduction The EG&G Relicon K Series linear photodiode arrays are designed tor applications that require higher sensitivity and wider dynamic range than is available with square element geometries. Devices in this series contain 128, 256, 512 or

InGaAs photodiode

Abstract: LA512 linear array 50 pitch
Contextual Info: ETX 100MLA256 ETX 500MLA256 ETX 100MLA512 EFiTÂXX ETX“ °"“ 2“ Multiplexed Linear InGaAs Photodiode Array Features • Linear 256 and 512 elements on 50 |im pitch ■ 30 im x 100 |jm or 25 |im x 500 jam pixels ■ Near Infrared response from 800 to ! 700 nm

RETICON ccd

Contextual Info: Advance Information P Series J ^ E G zG RETICO N 256-, 512-, 1024-, 2048-Element Photodiode Linear Array General Description The P Series linear image sensors offer a high performance solution to the increasing demands of advanced imaging appli­ cations. This product family provides unparalleled performance

RL0256

Contextual Info: J VL V T Series Solid State Line Scanners e g &g r e t ic o n 64,128, 256, and 512 Elements General Description The Reticon T series is a family of monolithic self-scanning linear photodiode arrays optimized for application in spectroscopy. The devices in this series consist of a row of silicon photodiodes,

RL0256

Abstract: RETICON 1024s
Contextual Info: n J L S Series E G r G R E T IC O N io a S o lid stateL in e Scanners 128, 256, 512, and 1024 Elements General Description The Reticon S series is a family of monolithic self-scanning linear photodiode arrays optimized for application in spectros­ copy. The devices in this series consist of a row of silicon

Photodiode Array linear

Abstract: photodiode linear array Photodiode-Array photodiode 256 elements linear array photodiode element 16 Photodiode-Array InGaAs photodiode InGaAs Epitaxx linear photodiode 512 elements
Contextual Info: EPI I M ETX 10 0 M L A 2 5 6 ETX 5 0 0 M L A 2 5 6 ETX 100IM LA512 Ü Ü : Multiplexed Linear InGaAs Photodiode Array Features • Linear 256 and 5 12 elements on 50 jam pitch ■ 30 im x 100 |jm or 25 (am x 500 jam pixels ■ Near Infrared response from 800 to ! 700 nm

InGaAs photodiode

Abstract: photodiode 256 elements photodiode linear array 256 focal plane array pin PA1300 photodiode 512 elements
Contextual Info: J k EGgG JUDSON Description The J18M Series detector is a self-scanned Indium Gallium Arsenide array with response to wavelengths ranging from 800 nm to 1700 nm. The array has elements configured in a linear orientation with standard array lengths in excess of one inch.

RETICON photodiode array 512

Abstract: RL1202LGQ-711 RL1205LGQ-711 RETICON RETICON 128 RL1210LGQ-711 RL1201LGQ-711 RETICON TB series sensors Reticon photodiode array 1024 pixel photodiode 256 elements silicon
Contextual Info: Imaging Telecom Imaging Product Line L-Series Linear CMOS Spectroscopy Sensor 25 or 50 µm pitch, 2.5 mm aperture, 128 to 1024 elements Description Features The PerkinElmer L-series of monolithic self-scanning linear photodiode arrays offers a high quality, low cost solution

RETICON photodiode array 512

Abstract: AMPLI DUAL CV 60 reticon photodiode array RL1505LFQ-711 RETICON RL1202LGQ-711 Reticon photodiode array 1024 pixel RL1502LFQ-711 RL1201LGQ-711 RL1205
Contextual Info: Imaging Telecom Imaging Product Line L-Series Linear CMOS Spectroscopy Sensor 25 or 50 µm pitch, 2.5 mm aperture, 128 to 1024 elements Description Features The PerkinElmer L-series of monolithic self-scanning linear photodiode arrays offers a high quality, low cost solution