PHOTODIODE 67 Search Results

Contextual Info: Photodiode Arrays for x-ray Security Scanning Left: 16 Element, 1.6 mm Pitch Photodiode Array With Segmented Csi Scintillator. Right: 16 Element, 2.5 mm Pitch Photodiode Array With GOS Low Energy Screen Scintillator. Photodiode Arrays – VTA Series Applications

650NM photodiode

Abstract: LOG100 photodiode 650nm nep photodiode amplifier REF200
Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

photodiode 650nm nep

Abstract: LOG100 OPT301 resistor1M REF200 OPT301M 650NM photodiode 650NM photodetector opt301s 2N2222 curve
Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

650NM photodiode

Abstract: photodiode amplifier 650NM photodetector Isolated 4-20ma photodiode 650nm nep LOG100 2n2222 transistor datasheet 650NM photodiode 40 kilohertz metal proximity detector sensor op amp
Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

LOG100

Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

LOG100

Abstract: 650NM photodiode
Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

LOG100

Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

LOG100

Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

photodiode 650nm nep

Abstract: 650NM photodiode LOG100 INA106 OPT301 OPT301M REF200 650NM photodetector blue laser sources pickup
Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

LOG100

Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

LOG100

Abstract: OPT301 OPT301M REF200 6nc3 650nm photoDIODE Photodiode 650nm
Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

LOG100

Abstract: 2N2222 curve
Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

LOG100

Abstract: 650NM photodiode photodiode amplifier REF200 ultraviolet sensor flame OPT301 OPT301M
Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

Contextual Info: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product S5668

650NM photodiode

Abstract: photodiode 650nm nep LOG100 650NM photodetector INA106 equivalent LARGE SURFACE AREA PHOTODIODE photodiode amplifier REF200 transistor 2n2222 TO-90 OPT209P-J
Contextual Info: OPT209 FPO 70% PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

LOG100

Abstract: OPT209 OPT209P REF200 650NM photodiode 1232B INA106 equivalent
Contextual Info: OPT209 FPO FPO 70% PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

Contextual Info: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray

Contextual Info: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray

Contextual Info: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 S11299-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product S5668

330KO

Abstract: S1232
Contextual Info: BU R R - BROW N OPT209 PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transim pedance amplifier on a single dielectrically isolated chip. The

Contextual Info: 16-element Si photodiode arrays S11212-421 S11212-321 S11212 series S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray

S268P

Contextual Info: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant

Contextual Info: B U R R - BRO W N 0PT2Q1 INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 X 0.090 inch 2.29 x 2.29mm The OPT201 is an opto-electronic integrated circuit containing a photodiode and transim pedance amplifier on a single dielectrically isolated chip. The

Contextual Info: PHOTODIODE 76-element Si photodiode array S3954 High UV sensitivity photodiode array mounted in DIP Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Half pitch 78-lead DIP l Element size: 3.175 x 0.3175 mm l Entire active area: 3.175 × 25.6875 mm