PHOTODIODE APD AMPLIFIER Search Results
PHOTODIODE APD AMPLIFIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| HA2-2541-2 | Rochester Electronics LLC | HA2-2541 - Operational Amplifier |
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| LM759H/B | Rochester Electronics LLC | LM759 - Power Operational Amplifier |
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| LM759CH | Rochester Electronics LLC | LM759 - Power Operational Amplifier, MBCY8 |
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| LM1536J/883 | Rochester Electronics LLC | LM1536 - Operational Amplifier - Dual marked (7800304PA) |
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| LM108AL | Rochester Electronics LLC | LM108 - Super Gain Op Amp |
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PHOTODIODE APD AMPLIFIER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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JDSU ERM
Abstract: jdsu apd avalanche photodiode jdsu ingaas apd photodetector photodetector apd dwdm APD 1550 nm photodetector
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jdsu ermjdsu apdavalanche photodiode jdsuingaas apd photodetector+2 | |
receiver avalanche 1550 fiber 2.5Contextual Info: Product Bulletin 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx The JDS Uniphase APD Micro Receiver (ERM 578 LMx) is a 10 Gb/s avalanche photodiode receiver in a small form factor package with differential outputs. Consisting of a 10 Gb/s avalanche photodiode and a high gain SiGe |
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receiver avalanche 1550 fiber 2.5 | |
photodiode preamplifier
Abstract: Si apd photodiode APD bias gain photodiode Avalanche photodiode APD Photodiode cost sheet 25XV APD50 avalanche photodiode Photodiode apd amplifier SILICON APD Pre-Amplifier
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apd50d-12459photodiode preamplifiersi apd photodiode+7 | |
pyroelectric amplifier circuit
Abstract: "Pyroelectric Detectors" pyroelectric detector P4488
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c5331c5460c5658h4741+6 | |
S4753
Abstract: Photodiode apd amplifier S4751 photodiode 10Ghz PIN APD, applications, bias supply PIN photodiode 5ghz rise time apd APD 10ghz S4752
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c5331c5460c5658c4890+9 | |
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Contextual Info: FRM138621CU DESCRIPTION The FRM13R621CU is an APD pre-amplifier module for 1300nm wave length optical receiver front-end. It contains a planar Ge-APD Avalanche Photodiode and a transimpedance type GaAs pre-amplifier IC. The Ge-APD, having high responsivity, low capacitance and low noise characteristics, |
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frm138621cufrm13r621cu1300nmfhm13r62ku+1 | |
C56-58
Abstract: hamamatsu low dark current APD
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c5658se-171kacc1023e02c56-58+1 | |
Si apd photodiode
Abstract: Si apd photodiode rangefinder photodiode Avalanche photodiode APD FOR POWER APD Ghz apd photodetector C5658 SE-171 is 53 APD photodiode 8 Ghz
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c5658se-171kacc1023e01si apd photodiode+6 | |
Si apd photodiode
Abstract: Si apd photodiode rangefinder APD, applications, bias supply C5658 SE-171
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c5658se-171kacc1023e03si apd photodiode+2 | |
Photodiode apd amplifier
Abstract: Photodiode apd high sensitivity avalanche Photodiode 300 nm
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sd9129photodiode apd amplifierphotodiode apd high sensitivityavalanche photodiode 300 nm | |
photodiode 1550nm nepContextual Info: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input |
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264-339759-var12lead200umopto759-var+1 | |
Si apd photodiode
Abstract: parameter vk 45 Si apd photodiode 700 nm 2SC3138Y apd 400- 700 nm 2SC3138-Y S8328 420nm quadrant avalanche photodiode Photodiode apd high sensitivity
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s8328se-171kapd1006e01si apd photodiode+8 | |
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Contextual Info: Silicon APD Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339794-VAR Description CMC Electronics’ 264-339794 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal feedback |
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264-339794-var12-lead500-1050nm500um+2 | |
photodiode InGaAs NEPContextual Info: Receiver TIA with TEC MICROELECTRONICS 200 MHz , 200 m InGaAs APD Avalanche Photodiode 264-339769-101 Description CMC Electronics’ 264-339769-101 is using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier |
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12-lead200umopto769-101photodiode ingaas nep | |
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Contextual Info: APD MODULES C5331 SERIES HAMAMATSU TENTATIVE DATA Nov. 1992 Operates an APD avalanche photodiode with a single 5 V supply • Choice of high sensitivity APDs High sensitivity APDs are available in 6 active areas from 0.2 to 5 mm diameter. • On-board precision circuits optim ized for APD |
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c5331hpf262082f39-2-935-8l-733s-194 | |
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Contextual Info: Pigtailed InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 276-339761-000 Description CMC Electronics’ 264-339761-000 uses an InGaAs APD with a GaAs FET frontend transimpedance amplifier in a DIL-14 package. The InGaAs APD has a low ionization ratio for lower shot noise. The |
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dil-141000-1600nmopto761-var | |
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Contextual Info: Data Sheet 10Gb/s APD Receiver with AGC AT10BC Features: The AT10BC receiver consists of an APD photodiode, a low-noise AGC preamplifier and a precision NTC thermistor in a hermetic coplanar package with a connectorised single-mode fibre pigtail. The wide linear |
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10gb/sat10bcd00264-pb | |
InGaAs apd photodiode
Abstract: Sensors Unlimited APD Ghz InGaAs APD, 10 Gb/s, -30 dBm SU-02ATR Photodiode receiver specification for 1550 nm Photodiode apd high sensitivity Photodiode apd amplifier
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su-02atroc-48/stm-167-mar-02ingaas apd photodiode+6 | |
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Contextual Info: Data Sheet 10Gb/s Wide Bandwidth APD Receiver with AGC AT10EC Features: The AT10EC receiver consists of an APD photodiode, a low-noise AGC preamplifier and a precision NTC thermistor in a hermetic coplanar package with a connectorised single-mode fibre pigtail. The wide linear |
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10gb/sat10ecd00211-pb | |
ACBYContextual Info: MP3430 90V Step-Up Converter with APD Current Monitor The Future of Analog IC Technology DESCRIPTION FEATURES The MP3430 is a monolithic step-up converter that integrates a power switch and a biased avalanche photodiode APD current monitor. The device can double the output voltage |
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mp3430acby | |
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Contextual Info: MP3430 90V Step-Up Converter with APD Current Monitor The Future of Analog IC Technology DESCRIPTION FEATURES The MP3430 is a monolithic step-up converter that integrates a power switch and a biased avalanche photodiode APD current monitor. The device can double the output voltage |
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mp3430 | |
AD8045
Abstract: HP89410A 10N50A GE-273 AD8067 AD8304 AD8305 ADL5306 ADL5317 gard
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adl531716-leadmo-220-veed-2cp-16-3+12 | |
APD 10ghz
Abstract: InGaAs apd photodiode OF3249N-MS TIA AGC application note PRBS231 STM-64 avalanche photodiode 1550nm 10GHz BER10
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jog-01328of3249n-ms10gbpsoc-192+7 | |
avalanche photodiode 1550nm 10GHz
Abstract: avalanche photodiode 1550nm OF3249N-MS PRBS231-1 JOG-01328 avalanche photodiode 10Gbps ingaas apd-tia
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jog-01328of3249n-ms10gbpsoc-192+5 | |