PHOTODIODE DIE WAFER Search Results

3335

Abstract: PIN-Photodiode-Array PHOTODIODE 4 CHANNEL ARRAY photodiode die WAFER Photodiode Array EMCORE photodiode array
Contextual Info: 1 x 12 GaAs PIN Photodiode Array Product Description EMCORE’s 12 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high volume fabrication source of package ready die to meet the growing

InGaas PIN photodiode, 1550 ,sensitivity

Abstract: JDS Uniphase photodiode epm 605 InGaAs photodiodes 1310 1550 PIN Photodiode 4 Ghz 1550 nm JDS Uniphase photodiode epm pin photodiode 1550 sensitivity JDSU EPM
Contextual Info: Product Bulletin C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes EPM 6xx Series The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in

JDS Uniphase photodiode epm 605

Abstract: JDS Uniphase photodiode epm 606LL InGaas PIN photodiode, 1550 sensitivity pin photodiode 1550 sensitivity epm 6xx series pin photodiode 1550 InGaas PIN photodiode, 1550 sensitivity application photodiode 1550 nm EPM605LL
Contextual Info: Product Bulletin EPM 6xx Series C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes 605 606 613 650 The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in

SF107

Contextual Info: Opto Products Semelab Opto-Electronic Components, Modules and Solutions OPTO CHIP DESIGN WAFER PROCESSING A Proven Record The Semelab Group has been a leading provider of high-end, innovative electronic solutions since 1974. A diverse, worldwide customer base benefits from our design innovation, our

FVOV6870

Abstract: MIL-HDBK-263 chip diode "sawn on foil" photodiode CIE eye response
Contextual Info: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity

Contextual Info: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity

FVOV6870

Abstract: MIL-HDBK-263 PIN photodiode chip photodiode die WAFER
Contextual Info: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity

PIN-Photodiode-Array

Abstract: EMCORE photodiode photodiode die WAFER PHOTODIODE 4 CHANNEL ARRAY 1055 GaAs photodiode Emcore PIN photodiode crosstalk
Contextual Info: 1 x 4 GaAs PIN Photodiode Array preliminary information Product Description EMCORE’s 4 channel Gallium Arsenide (GaAs) PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high

Contextual Info: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity

emcore

Abstract: PHOTODIODE 4 CHANNEL ARRAY EMCORE photodiode GaAs photodiode Emcore photodiode die WAFER 1055 EMCORE photodiode array
Contextual Info: 1 x 4 GaAs PIN Photodiode Array Product Description EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high

Contextual Info: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity

FVOV6870

Abstract: MIL-HDBK-263
Contextual Info: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity

photodiode die WAFER

Abstract: GaAs photodiode Emcore PHOTODIODE 4 CHANNEL ARRAY emcore EMCORE photodiode array 50 um photodiode 1055 Photodiode Array
Contextual Info: 1 x 4 GaAs PIN Photodiode Array Product Description EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high

02009-DSH-001-D

Abstract: M02009 MC2009 photodiode preamplifier AGC
Contextual Info: M02009 Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622 Mbps The MC2009 is a low-noise, transimpedance amplifier with AGC, manufactured in low-cost CMOS. Its wide dynamic range, differential output and high PIN bias make it well suited for telecommunications, especially OC-12/STM-4.

M02009

Abstract: photodiode preamplifier AGC M2009DIE M2009DIEW MC2009 photodiode die WAFER
Contextual Info: M02009 Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622 Mbps Data Sheet 02009-DSH-001-C 6/03 Information provided in this Data Sheet is subject to change without notice. Mindspeed Technologies , Inc, Proprietary and Confidential M02009

M02020-22

Abstract: photodiode die WAFER M02020 TIA AGC application note 0201X-PBD-002 photodiode esd sensitivity
Contextual Info: M02020 4 Gbps CMOS TIA with AGC The M02020 is a 4 Gbps TIA achieving a wide input dynamic range to support different transmission distance requirements. Input overload of 2 mAPP is provided to support short-haul fiber optic systems and input sensitivity of

Philips 787 receiver

Abstract: CGY2110CU OC192 STM-64 philips receiver 787
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2110CU 10 Gbits/s transimpedance amplifier Preliminary specification File under Integrated Circuits, IC19 2001 Dec 07 Philips Semiconductors Preliminary specification 10 Gbits/s transimpedance amplifier CGY2110CU FEATURES

700 MHZ Tower Mounted Amplifiers

Abstract: MC2007
Contextual Info: MC2007-3 3.3 V PIN Pre-Amplifier with AGC for Applications to 200 Mbps The MC2007-3 is a low-noise, transimpedance amplifier with AGC, manufactured in an advanced, low-cost, submicron CMOS process. Its wide dynamic range, differential output and high PIN bias make it well suited to high-performance telecommunications, especially OC-3/STM-1. However, due to its low cost, the MC2007-3 also meets the

4335TA

Abstract: photodiode amplifier 7.5 ghz inphi TIA inphi pin Photodiode 2 GHz circuit inphi TIA 10 pin photodiode 10 ghz OC-768 STM-256 43Gbps
Contextual Info: 4335TA 43 Gbps Transimpedance Amplifier with Internal DCA Feedback Loop Data Sheet Applications • • • SONET OC-768 and SDH STM-256 equipment Short, intermediate, and long haul optical receiver modules Broadband ATE Features • • • • • • Supports data rates up to 43 Gbps

AC DC supplies MEAN WELL diagrams

Abstract: TIA AGC application note MC2007
Contextual Info: Revision Information This document contains information that is subject to change without notice. Contact Technical Publications for latest revision information. MC2007-3 3.3 V PIN Pre-Amplifier with AGC for Applications to 200 Mbps The MC2007-3 is a low-noise, transimpedance amplifier with AGC, manufactured in an advanced, low-cost, submicron CMOS process. Its wide dynamic range, differential output and high PIN bias make it well suited to highperformance telecommunications, especially OC-3/STM-1. However, due to its low cost, the MC2007-3 also meets

02014-DSH-001-C

Abstract: MINDSPEED M02015 Mindspeed Technologies 266 dsh TIA AGC application note M02015
Contextual Info: M02014 CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 2.5 Gbps The M02014 is a CMOS transimpedance amplifier with AGC. The AGC gives a wide dynamic range of 32 dB. The high transimpedance gain of 11 kΩ ensures good sensitivity. For optimum system performance, the M02014 die should be mounted with a photodetector inside a lensed

photodiode die WAFER

Abstract: TIA AGC application note
Contextual Info: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. M02011 CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 622 Mbps

Contextual Info: PHY1097-03 A Maxim Integrated Products Brand 2.5Gbps High Sensitivity Transimpedance Amplifier Features Description • • • • -29dBm Sensitivity Up to 2.5Gbps NRZ data rates 150nA rms typical input referred noise Automatic gain control of output over full input

02007-DSH-002-E

Abstract: M02095 MC2007 TIA AGC application note MC2045
Contextual Info: MC2007-3 3.3 V PIN Pre-Amplifier with AGC for Applications to 200 Mbps The MC2007-3 is a low-noise, transimpedance amplifier with AGC, manufactured in an advanced, low-cost, submicron CMOS process. Its wide dynamic range, differential output and high PIN bias make it well suited to highperformance telecommunications, especially OC-3/STM-1. However, due to its low cost, the MC2007-3 also meets