PHOTODIODE ESD SENSITIVITY Search Results

GM250X7R10216

Abstract: ADN2821 ad282 ADN2821ACHIPS-02K ADN2821ACHIPS-05K D3186 TO-CAN photodiode esd sensitivity
Contextual Info: 11.1 Gbps 3.3 V Low Noise, High Gain TIA ADN2821 Preliminary Technical Data FEATURES GENERAL DESCRIPTION Bandwidth: 8 GHz min Input noise current density: 12 pA/√Hz Optical sensitivity: −19 dBm1 Differential transimpedance/linear range: ADN2821_2: 2.0 kΩ/0.20 mA p-p

Contextual Info: 11.1 Gbps 3.3 V Low Noise, High Gain TIA Small Form Factor Series Preliminary Technical Data ADN2821 FEATURES GENERAL DESCRIPTION Bandwidth: 8 GHz min Input noise current density: 12 pA/√Hz Optical sensitivity: −19 dBm1 Differential transimpedance/linear range:

FIL-3C

Abstract: fil 3c
Contextual Info: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,

FIL-100V

Abstract: UDT PIN 10DP UDT 10 DP RSH M 5DPI UDT BNC UDT BNC PIN UDT BNC PIN 8 PIN3CDP pin-10dp
Contextual Info: Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral

Contextual Info: 5mm Silicon PIN Photodiode , T-1 3/4 PD333-3C/H0/L2 Features •Fast response time •High photo sensitivity •Small junction capacitance •Pb free •This product itself will remain within RoHS compliant version. Description PD333-3C/H0/L2 is a high speed and high sensitive PIN photodiode

Contextual Info: 5mm Silicon PIN Photodiode , T-1 3/4 PD333-3B/H0/L2 Features •Fast response time •High photo sensitivity •Small junction capacitance •Pb free •This product itself will remain within RoHS compliant version. Description PD333-3B/H0/L2 is a high speed and high sensitive PIN photodiode

Charge Sensitive Preamplifier Specifications Mode

Abstract: Photodiode and amplifier IC for CD far uv photodiode photodiode chip silicon opa637 UDT Sensors
Contextual Info: Soft X-Ray, Deep UV Enhanced Series Inversion Layer Silicon Photodiodes UDT Sensors’ 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any

Contextual Info: 3.2 Gbps, 3.3 V, Low Noise, Transimpedance Amplifier ADN2880 FEATURES GENERAL DESCRIPTION Bandwidth: 2.5 GHz Optical sensitivity: −24.2 dBm 1 Differential transimpedance: 4400 V/A Power dissipation: 70 mW Differential output swing: 260 mV p-p Input overload current: 4.3 mA p-p

Sc 6200 equivalent

Abstract: ADN2880 ADN2880ACHIPS OC48 MAX485 4G APD ROSA pin Photodiode 2 GHz circuit
Contextual Info: 3.2 Gbps, 3.3 V, Low Noise, Transimpedance Amplifier ADN2880 FEATURES GENERAL DESCRIPTION Bandwidth: 2.5 GHz Optical sensitivity: −24.2 dBm 1 Differential transimpedance: 4400 V/A Power dissipation: 70 mW Differential output swing: 260 mV p-p Input overload current: 4.3 mA p-p

CCD linear array

Abstract: RL2048PAG-021 RL1024PAG-021 RL0512PAG-021 fast linear ccd 512 linear array photodiode 2048 elements RL2048PAQ-021 2048 x 1 ccd linear array diode 250nm RL2048P
Contextual Info: CCD P-Series Linear Photodiode Array Imagers 14µm, single output, 512, 1024, 2048 elements Features Description In the P-series linear imager, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed chargecoupled scanning to offer an uncompromising solution to the increasing

M02020-22

Abstract: photodiode die WAFER M02020 TIA AGC application note 0201X-PBD-002 photodiode esd sensitivity
Contextual Info: M02020 4 Gbps CMOS TIA with AGC The M02020 is a 4 Gbps TIA achieving a wide input dynamic range to support different transmission distance requirements. Input overload of 2 mAPP is provided to support short-haul fiber optic systems and input sensitivity of

RL1024PAG-021

Abstract: RL2048PAG-021 CCD linear array RL2048P RL0512PAG-021 fast linear ccd 512 photodiode array perkinelmer RL2048PAQ-021 photodiode D11 rl1024P
Contextual Info: CCD P-Series Linear Photodiode Array Imagers 14µm, single output, 512, 1024, 2048 elements Features Description In the P-series linear imager, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed chargecoupled scanning to offer an uncompromising solution to the increasing

0201X-PBD-002

Abstract: MINDSPEED M02015 GPON InGaAs apd photodiode 2.4 GHz rc servo control circuit InGaAs apd photodiode application note SFP-8472 InGaas PIN photodiode chip TIA AGC application note M02015
Contextual Info: M02015 Low Power CMOS Transimpedance Amplifier with Rx Pwr Mon Output and AGC for Fiber Optic Networks up to 2.5 Gbps The M02015 is a CMOS transimpedance amplifier with AGC. The AGC gives a wide dynamic range of 32 dB. The high transimpedance gain of 9 kΩ ensures good sensitivity.

SFP-8472

Abstract: TIA AGC application note GPON block diagram InGaAs apd photodiode M0201 APD 1300 2,5 GHz m02016
Contextual Info: M02016 CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 1.25 Gbps The M02016 is a CMOS transimpedance amplifier with AGC. The AGC gives a wide dynamic range of 35 dB. The high transimpedance gain of 24 kΩ ensures good sensitivity. For optimum system performance, the M02016 die should be mounted with a silicon or InGaAs PIN photo detector

transimpedance amplifier 10 GHz

Abstract: 5PIN TO56 package ADN2880 ADN2880XCHIPS-WP OC48
Contextual Info: 3.2 Gbps 3.3 V Low Noise Transimpedance Amplifier ADN2880 Preliminary Technical Data FEATURES Technology: high performance SiGe Bandwidth: 2.1GHz minimum Input noise current density: 8 pA√Hz Optical sensitivity: −24 dBm Differential transimpedance: 5000 V/A

ADN2882

Abstract: ADN2882XCHIPS-WP OC48 5PIN TO56 package
Contextual Info: 4.25 Gbps 3.3V Low Noise Transimpedance Amplifier ADN2882 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Technology: high performance SiGe Bandwidth: 3.2 GHz minimum Input noise current density: 10 pA√Hz Optical sensitivity: −22 dBm Differential transimpedance: 4000 V/A

04945-000

Abstract: 5PIN TO56 package ADN2880 ADN2880XCHIPS-WP OC48 04-Revision photo diode 10 Gbps
Contextual Info: 3.2 Gbps 3.3 V Low Noise Transimpedance Amplifier ADN2880 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Technology: high performance SiGe Bandwidth: 2.1GHz minimum Input noise current density: 8 pA√Hz Optical sensitivity: −24 dBm Differential transimpedance: 5000 V/A

Lucent 1319

Abstract: 1319ms apd photodetector pin diagram of ic 7495 1319MR 1319ma transistor d2300 d2525p* lucent 2000 laser module Lucent 700b
Contextual Info: Data Sheet July 2000 1319-Type High-Speed Lightwave Receiver Features • High data rate capability: 2.5 Gbits/s ■ APD or PIN photodetector ■ Fully operational through the 1.3 µm to 1.55 µm wavelength range ■ Typical sensitivity: — –34 dBm with APD

02014-DSH-001-C

Abstract: MINDSPEED M02015 Mindspeed Technologies 266 dsh TIA AGC application note M02015
Contextual Info: M02014 CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 2.5 Gbps The M02014 is a CMOS transimpedance amplifier with AGC. The AGC gives a wide dynamic range of 32 dB. The high transimpedance gain of 11 kΩ ensures good sensitivity. For optimum system performance, the M02014 die should be mounted with a photodetector inside a lensed

InGaAs Epitaxx APD

Abstract: Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier
Contextual Info: Product Bulletin ERM 578DKX 10 Gb/s High Sensitivity Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +5.7V All specifications without connector. Parameter

JDSU ERM

Abstract: erm568
Contextual Info: COMMUNICATIONS COMPONENTS 10 Gb/s SFF Receiver – PIN Micro ERM 568 HM Low Gain, ERM 568 JM High Gain Key Features • High sensitivity • Differential outputs • Transimpedance gain: - HM: 750 V/W - JM: 1200 V/W • 0 dBm overload • Very small form factor coplanar package with single mode

Contextual Info: 4.25 Gbps, 3.3 V Low Noise, Transimpedance Amplifier ADN2882 FEATURES GENERAL DESCRIPTION Bandwidth: 3.5 GHz Input noise current density: 8 pA/√Hz Optical sensitivity −22.0 dBm 1 −20.4 dBm 2 Differential transimpedance: 3700 V/A Power dissipation: 80 mW

ADN2882

Abstract: ADN2882ACHIPS apd-TIA Receiver
Contextual Info: 4.25 Gbps, 3.3 V Low Noise, Transimpedance Amplifier ADN2882 FEATURES GENERAL DESCRIPTION Bandwidth: 3.5 GHz Input noise current density: 8 pA/√Hz Optical sensitivity −22.0 dBm 1 −20.4 dBm 2 Differential transimpedance: 3700 V/A Power dissipation: 80 mW

EMCORE APD

Abstract: avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5
Contextual Info: PRELIMINARY DATASHEET | DECEMBER 30, 2005 2.5 Gb/s Avalanche Photodiode Bare Die The 2.5 Gb/s avalanche photodiode device features high responsivity, low dark current, and facilitates designs that can achieve -34 dBm receiver sensitivity. Target applications include SONET OC-48, SDH