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    PHOTODIODE RESPONSIVITY 1.1 Search Results

    PHOTODIODE RESPONSIVITY 1.1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM161H/883 Rochester Electronics LLC Comparator, 3000uV Offset-Max, 14ns Response Time, BIPolar, MBCY10, Visit Rochester Electronics LLC Buy
    LM106H Rochester Electronics LLC Comparator, 1 Func, 2000uV Offset-Max, 28ns Response Time, BIPolar, MBCY8, METAL CAN-8 Visit Rochester Electronics LLC Buy
    LM710CH Rochester Electronics LLC Comparator, 1 Func, 5000uV Offset-Max, 40ns Response Time, BIPolar, MBCY8, METAL CAN-8 Visit Rochester Electronics LLC Buy
    LM760J/883 Rochester Electronics LLC Comparator, 1 Func, 6000uV Offset-Max, 16ns Response Time, BIPolar, CDIP8, CERAMIC, DIP-8 Visit Rochester Electronics LLC Buy
    LM361J Rochester Electronics LLC LM361 - Comparator, 1 Func, 5000uV Offset-Max, 12ns Response Time, BIPolar, CERAMIC, DIP-14 Visit Rochester Electronics LLC Buy

    PHOTODIODE RESPONSIVITY 1.1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1C12

    Abstract: 1300nm TPA photodiode photo diode array InGaAs TPA-1C12 PIN 1300nm
    Text: TPA-1C12 InGaAs PIN photodiode Array FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Surface reflectivity 2 Responsivity uniformity Dark Current


    Original     		PDF TPA-1C12 1300nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 1C12 TPA photodiode photo diode array InGaAs TPA-1C12 PIN 1300nm

    photodiode amplifier

    Abstract: smoke detector schematic schematic SMPX160 pickup photodiode photodiode bias circuit
    Text: SMPX160 SILICON PIN PHOTODIODE HYBRIDS THE SMPX160 HYBRID PHOTODIODE 0.66mm2 WITH INTEGRAL AMPLIFIER AND BG18 OPTICAL FILTER MECHANICAL DATA Dimensions in mm 8.9mm 5.9mm 25.0mm Pin1 Pin2 Pin4 Pin3 FEATURES: 8.2mm • HIGH RESPONSIVITY • PHOTODIODE SIZE: 1 x 1 mm note 1


    Original     		PDF SMPX160 66mm2) BG18OPTICAL 32nV/Hz 30KHz photodiode amplifier smoke detector schematic schematic SMPX160 pickup photodiode photodiode bias circuit

    quad photodiode

    Abstract: photodiode encoder
    Text: Surface Mount Quad Photodiode OPR5911 Features: • • • • Surface mountable Closely matched responsivity High temperature operation Common cathode connections Description: Each OPR5911 device is a four-element photodiode that is enclosed in a compact


    Original     		PDF OPR5911 OPR5911 quad photodiode photodiode encoder

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount PIN Photodiode OPR5910, OPR5913, OPR5915 Features: • • • • • Surface mountable High temperature operation Circular active area OPR5910 Large area photodiode (OPR5913) 880 nm peak responsivity offers maximum coupling with OPTEK’s


    Original     		PDF OPR5910, OPR5913, OPR5915 OPR5910) OPR5913) OPR5915) OPR5913 OP5915

    HFD3033

    Abstract: HFD3033-002
    Text: 18 September 1997 HFD3033 Silicon PIN Photodiode FEATURES • Fiber optic PIN photodiode • Plastic TO-18 style cap • Low capacitance • High speed: 1.2 ns typical • High responsivity: 0.33 A/W typical FIBER106.TIF DESCRIPTION The HFD3033 is a PIN photodiode designed for


    Original     		PDF HFD3033 FIBER106 HFD3033 FIBER043 FIBER102 FIBER063 FIBER064 HFD3033-002

    Analog Photodiode 1550nm

    Abstract: PIN Photodiode 1550nm PIN Photodiode 1550nm Photodiode 1550nm bandwidth 1550nm photodiode 2 Ghz pin Photodiode 2 GHz Analog Photodiode, 1550nm, FID3S2KX
    Text: Analog PIN Photodiode FID3S2KX FEATURES • • • • • • PIN photodiode for CATV/Analog applications High Responsivity Wide Bandwidth Low Modulation Distortion High Optical Return Loss: >40dB High Frequency Response: >2.5GHz APPLICATIONS • Analog Transmission Systems


    Original     		PDF otherwi4888 Analog Photodiode 1550nm PIN Photodiode 1550nm PIN Photodiode 1550nm Photodiode 1550nm bandwidth 1550nm photodiode 2 Ghz pin Photodiode 2 GHz Analog Photodiode, 1550nm, FID3S2KX

    quad photodiode

    Abstract: OP5925 OPR5911 very high area ir photodiode OPR5925 photodiode encoder
    Text: Surface Mount Quad Photodiode OPR5911, OPR5925 Features: • • • • Surface mountable Closely matched responsivity High temperature operation Separate cathode connections OPR5925 Description: Each OPR5911 and OP5925 device is a four-element photodiode that is enclosed in a compact polyamide chip


    Original     		PDF OPR5911, OPR5925 OPR5925) OPR5911 OP5925 characteristi30 OPR5911 quad photodiode very high area ir photodiode OPR5925 photodiode encoder

    Untitled

    Abstract: No abstract text available
    Text: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The active area of the silicon die is 2.5 x 1.1 mm2. The high optical responsivity is due to the antireflective


    Original     		PDF 030mm

    Photodiode

    Abstract: No abstract text available
    Text: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The active area of the silicon die is 2.5 x 1.1 mm2. The high optical responsivity is due to the antireflective


    Original     		PDF 030mm Photodiode

    1C12

    Abstract: No abstract text available
    Text: TPD-1C12 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Forward Current Dark Current Breakdown Voltage Capacitance R


    Original     		PDF TPD-1C12 1300nm 1E-10 1E-11 1E-12 1E-13 1C12

    Untitled

    Abstract: No abstract text available
    Text: TPD-1C12-000 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1


    Original     		PDF TPD-1C12-000 1300nm 850nm 1E-10 1E-11 1E-12 1E-13 350x350

    photodiode array

    Abstract: Photodiode-Array ASIX Electronics PIN-Photodiode-Array OPR2101 9 ELEMENT photoDIODE ARRAY photodiode encoder
    Text: Six Element Photodiode Array in SMD Hybrid Package OPR2101 • • • • • Six PIN photodiode array SMD chip carrier Wide operating temperature range Low leakage current Closely matched responsivity between elements The OPR2101 is a six element photodiode array packaged in a high temperature SMD chip carrier. Designed specifically for industrial encoder applications, this device’s small size, temperature range, and low leakage current


    Original     		PDF OPR2101 OPR2101 photodiode array Photodiode-Array ASIX Electronics PIN-Photodiode-Array 9 ELEMENT photoDIODE ARRAY photodiode encoder

    PIN 1300nm

    Abstract: TPD-1C12-001 1E13 InGaas PIN photodiode chip
    Text: TPD-1C12-001 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1


    Original     		PDF TPD-1C12-001 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 PIN 1300nm TPD-1C12-001 1E13 InGaas PIN photodiode chip

    PIN photodiode 850nm

    Abstract: No abstract text available
    Text: TPD-8D12-000 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.50 0.55 0.2 2 0.9 1.1 Responsivity Dark Current


    Original     		PDF TPD-8D12-000 850nm 0x10-4 850nm 1E-10 1E-11 1E-12 PIN photodiode 850nm

    Photodiode-Array

    Abstract: OPR2100 OSM960 OSM960P motor encoder photodiode encoder Photodiode Array
    Text: Product Bulletin OSM960 July 1999 Six Element SMD Photodiode Array Type OSM960, OSM960P Dimensions are in inches millimeters . Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • Surface mountable • Closely matched responsivity • High temperature operation


    Original     		PDF OSM960 OSM960, OSM960P OSM960 Photodiode-Array OPR2100 OSM960P motor encoder photodiode encoder Photodiode Array

    50 um photodiode

    Abstract: Fiber Options pin photodiode 10 ghz PDT1346-DI PDT134X PDT1441-DI PDT1442-AS PDT144X TA-TSY-000983
    Text: Pigtailed PIN Photodiodes Technical Data PDT1X4X Features Description • Variety of Flange/Pinout Options • Fiber Pigtail Options • Compact Package • High Reliability Planar InGaAs PIN Photodiode • High Responsivity The PDT range of products includes a variety of compact


    Original     		PDF 5963-3401E PDT1346-DI PDT1441-DI PDT1442-AS PDT1442-BI PDT1442-DI PDT1446-DI 50 um photodiode Fiber Options pin photodiode 10 ghz PDT1346-DI PDT134X PDT1441-DI PDT1442-AS PDT144X TA-TSY-000983

    PIN photodiode responsivity 1550nm 1.1

    Abstract: photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth PIN Photodiode 1550nm Photodiode 1550nm bandwidth Afonics Fibreoptics LPM0032 LPM0033 PIN Photodiode 1550nm 1310nm photodiode InGaAs Photodiode 1550nm
    Text: LPM0032 AFONICS Performance Highlights - 1550nm Tx 1310nm Rx WDM - 9/125µm fibre stub receptacle - FC/PC receptacle - 1550nm FP Laser diode minimum 1.2mW into 9/125µm fibre - InGaAs photodiode minimum responsivity 0.45A/W - Optical crosstalk better than –50dB


    Original     		PDF LPM0032 1550nm 1310nm LPM0033 25Gbps PIN photodiode responsivity 1550nm 1.1 photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth PIN Photodiode 1550nm Photodiode 1550nm bandwidth Afonics Fibreoptics LPM0032 PIN Photodiode 1550nm 1310nm photodiode InGaAs Photodiode 1550nm

    Untitled

    Abstract: No abstract text available
    Text: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity


    Original     		PDF BPW21R BPW21R 11-Mar-11

    bpw21r vishay

    Abstract: No abstract text available
    Text: BPW21R Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity


    Original     		PDF BPW21R BPW21R 11-Mar-11 bpw21r vishay

    Afonics Fibreoptics

    Abstract: Photodiode 1550nm bandwidth LPM0032 LPM0033 PIN photodiode responsivity 1550nm 1.1 InGaAs Photodiode 1550nm PIN photodiode responsivity 1310nm 1.1 PIN Photodiode 1550nm sensitivity
    Text: LPM0033 AFONICS Performance Highlights - 1310nm Tx 1550nm Rx WDM - 9/125µm fibre stub receptacle - FC/PC receptacle - 1310nm FP Laser diode minimum 1.2mW into 9/125µm fibre - InGaAs photodiode minimum responsivity 0.45A/W - Optical crosstalk better than –50dB


    Original     		PDF LPM0033 1310nm 1550nm LPM0032 25Gbps Afonics Fibreoptics Photodiode 1550nm bandwidth LPM0033 PIN photodiode responsivity 1550nm 1.1 InGaAs Photodiode 1550nm PIN photodiode responsivity 1310nm 1.1 PIN Photodiode 1550nm sensitivity

    8C450

    Abstract: BG18 photodiode amplifier SMPX158 SMPX159
    Text: SMPX158 SMPX159 SILICON PIN PHOTODIODE HYBRIDS MECHANICAL DATA Dimensions in mm 8.9mm 5.9mm 25.0mm Pin1 Pin2 Pin4 Pin3 THE SMPX158 and SMPX159 HYBRID PHOTODIODES 15mm2 WITH INTEGRAL AMPLIFIER AND BG18 OPTICAL FILTER 8.2mm FEATURES: HIGH PROFILE TO5 • HIGH RESPONSIVITY


    Original     		PDF SMPX158 SMPX159 SMPX158 15mm2) 8C450 BG18 photodiode amplifier SMPX159

    TPD-8D12-001

    Abstract: No abstract text available
    Text: TPD-8D12-001 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.50 0.55 1.0 9.0 0.6 0.8 Responsivity 1 Dark Current


    Original     		PDF TPD-8D12-001 850nm 1E-10 1E-11 1E-12 TPD-8D12-001

    GGEM

    Abstract: No abstract text available
    Text: 0PT3Q1 B U R R -B R O W N E ] INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm • 1MQ FEEDBACK RESISTOR • HIGH RESPONSIVITY: 0.47A/W (650nm) • IMPROVED UV RESPONSE • LOW DARK ERRORS: 2mV


    OCR Scan     		PDF 650nm) 400fiA OPT301 OPT301 17313bS 0D24171 GGEM

    Untitled

    Abstract: No abstract text available
    Text: E G & G / CANADA/OPTOELEK IO D a o a O b l D DDDD1S7 7 3 7 B C A N A VtCil Optics Si Photodiode C30974E DATA SHEET Rectangular Silicon Avalanche Photodiode Preamplifier Module • Responsivity at TA « 25°C 3.7 x 10s V/W at 900 nm — 1.8 x 10s V/W at 1060 mn


    OCR Scan     		PDF C30974E C30974E ED-0034/10/88