PHOTODIODE VACTEC Search Results

Photodiode vactec

Abstract: S1723-04 "CT scan" VTH209XDS QQQ112M VTH2090 VTH2091
Contextual Info: 3D3übüT SbE ÜG Ü1 1 23 IVCT SSG J^EG&G VACTEC T ^ l- 5 3 VTH209XDS Rev. E LARGE AREA PIN PHOTODIODE VTH2090, 2091 OPTOELECTRONICS S1723-04, 06 INDUSTRY EQUIVALENT E G & G VACTEC -PRODUCT DESCRIPTIO N This PIN photodiode consists of a chip with a

"CT scan"

Abstract: EG*G Optoelectronics Photodiode vactec S1723-04 Vactec VTH2090 VTH2091 VTH209XDS
Contextual Info: aDBDbOT SbE n 0001153 V CT SSO VTH209XDS Rev. E LARGE AREA PIN PHOTODIODE EtSsG VACTBC V T H 2 0 9 0 , 2091 OPTOELECTRONICS S1723-04, 06 INDUSTRY EQUIVALENT G & 6 E VACTEC PRODUCT DESCRIPTION This PIN photodiode consists of a chip with a 9.2 x 9.2 mm active area mounted in a black

Contextual Info: 5bE 3030^0^ D 0001113 n EG kG v a c t e c bQl G 8, G - 4 1-55 VTB9610DS Rev, B PHOTODIODE ARRAY 24 ELEMENT VTB9610 OPTOELECTRONICS E IVCT VACTEC PRODUCT DESCRIPTION FEATURES This is a 24 element photodiode array specifically designed for use in the photovoltaic mode. The anode of each

Contextual Info: SbE D • BDSGbQ'ì 0 0 0 1 1 2 1 7ÔB ■ VCT VT0340S Rev. B SILICON PHOTODIODE J ^ E G zG VACTEC VTD34 OPTOELECTRONICS BPW 34 INDUSTRY EQUIVALENT E 6 8t G V A C T E C T-41-51 PRODUCT DESCRIPTION FEATURES • This P on N photodiode is designed to provide

Vactec

Abstract: Photodiode-Array VTB9610
Contextual Info: SbE n 3 0 3 0 L i Q c3 0 0 D 1 1 1 3 D bOl ' <4 I ' O O _VTB9610DS Rev. B PHOTODIODE ARRAY 24 ELEMENT E G zG v a c t e c VTB9610 OPTOELECTRONICS E G & G VCT VACTEC PRODUCT DESCRIPTION FEATURES This is a 24 element photodiode array specifically designed for use in the

Contextual Info: VTB6061 CIE VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a "flat” window, dual lead TO-8 pack­ age. This photodiode is a spectrally modified VTB6061B with a spectral response closely resembling that of the

VTP413

Contextual Info: Sb E D BDBDbD^ OOOlGbH HVCT VTP Process Photodiodes VTP413 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 51 Planar silicon photodiode in a molded large lensed, sidelooker package. The dark package material filters out visible

VTB6060

Abstract: 2X10 VTB6060J VTB6061J 6061J
Contextual Info: SbE » • 3Q3DbDT 0001D147 0D3 VTB Process Photodiodes IVCT VTB6060J, 6061J E G & G VACTEC T -41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a 'flat" window, three lead TO-8 pack­ age. Chip is isolated from case. The

Contextual Info: SbE ]> • BDaObO'i GDDllGS 535 IVCT VTS7080A |~VTS-2 Process Photodiodes T-41-51 E G 8, G VACTEC PACKAGE DIMENSIONS inch mm ( 20.831 .820 PRODUCT DESCRIPTION CASE 16 Large area silicon photodiode mounted in a two lead 1.25" diameter hermetic package. Cathode is common to the

VTP413

Abstract: S 76 infrared k75m
Contextual Info: 5bE D BDBDbO" □ □□lübl4 n e VTP Process Photodiodes • VCT VTP413 E 6 & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm) PRODUCT DESCRIPTION CASE 51 Planar silicon photodiode in a molded large lensed, sidelooker package. The dark package material filters out visible

UV led 200 nm peak

Abstract: uv led 365 VTB5050UVJ VTB5051UVJ
Contextual Info: £fc E D 30301,0^ 0001Q44 VTB Process Photodiodes IVCT 3T4 VTB5050UVJ, 1UVJ E G & G VACTEC PACKAGE DIMENSIONS neh (mm) PRODUCT DESCRIPTION CASE U A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planarsilicon photodiode in athree lead TO-5 package with a UV transmitting

Vactec

Abstract: VTB9415 VTB9416
Contextual Info: SbE D 3030bCH 000105b Dlb M V C T VTB Process Photodiodes VTB9415, E G & G VACTEC 9416 T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planarsilicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of

P-111-2

Abstract: VTP1113 VTP1112
Contextual Info: SbE D I • aoaübül OOOlOb? IVCT TTl VTP1112, 1113 Process Photodiodes T-41-51 E G & G VACTEC PACKAGE DIMENSIONS inch mm CASE 19 PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead T O -4 6 package. ABSOLUTE MAXIMUM RATINGS

1150S

Abstract: VTP1150 Photodiode vactec
Contextual Info: 5bE D 3Q3QtiQR OQOIQbS VTP Process Photodiodes E 6 & 6 B3Ô HVCT VTP11 50 , 1150S VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) Planar silicon photodiode mounted on a two lead ceramic header. A molded

Contextual Info: 5bE D 3030 ^0^ GG01070 fi Ï fi HVCT VTP12 50 , 1250S VTP Process Photodiodes E Hit, T-41-51 VACTEC PACKAGE DIMENSIONS inch (mm PRODUCT DESCRIPTION CASE 12 Planar silicon photodiode mounted on a two lead ceramic header. These diodes have a filter incorporated into the pack­

DDD104

Abstract: VTB6060UV
Contextual Info: SbE ]> • aüaDbDT DDD104Ô T4T IVCT VTB6060UV, 61 UV I VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting "flat" window. Cathode is

VTP1013

Abstract: VTP1012
Contextual Info: 5bE D • BDBDbD^ □□OlQbb TbS H V C T VTP Process Photodiodes E 6 8, G VTP1012, 1013 VACTEC T -4 1 -5 1 PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERME11C CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in

VTB9412B

Abstract: VTB9413B VTB9414B
Contextual Info: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in

s 9413

Abstract: VTP9412 VTP9413
Contextual Info: SLE D • SOSObD^ 0001GÛM VTP Process Photodiodes E 6 & G TÔD « V C T VTP9412, 9413 T -41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear

Contextual Info: 5bE D • 3030^0^ □□□1111 83^ « V C T VTS7070A VTS-3 Process Photodiodes E G & 6 VACTEC T - 9 0 -0 1 PACKAGE DIMENSIONS inch mm CASE 16 PRODUCT DESCRIPTION 1.25-HERMETIC PACKAGE CHIP ACTIVE AREA: .431 in2 (278 mm2) Large area planar silicon photodiode in

VTB1112BI

Contextual Info: S la E D 3G30bCH G001G34 VTB Process Photodiodes E G 8. G MSS H V C T VT B 11 12B I, 13BI 7 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in

VTS7080A

Contextual Info: SbE ]> • 3030ijCH Q0011DS S3S ■VCT VTS7080A |~VTS-2 Process Photodiodes E G 8, G T-41-51 VACTEC PACKAGE DIMENSIONS inch mm ( 2 0 .8 3 1 .8 2 0 PRODUCT DESCRIPTION Large area silicon photodiode mounted in a two lead 1.25" diameter hermetic package. Cathode is common to the

Contextual Info: VTD206K Alternate Source/ Second Source Photodiodes SFH206K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch(mm) CASE 61 PRODUCT DESCRIPTION TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) Large area planarsilicon photodiode in a waterclear, cast epoxy sidelooker,

VTP5040

Abstract: VTP5041 VTP5841
Contextual Info: _ 5 bE D • 303QbtH DD01075 T76 * V C T 4 1 IR VTP5040. VTP Process Photodiodes T-41-51 E G & G VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a “flat" win­ dow, dual lead TO-5 package. Cathode is common to the case. VTP5041 IR