PHOTODIODES Search Results

TCD1200D

Abstract: TCD1200 TCD-12
Contextual Info: TCD1200D TENTATIVE The TCD1200D is a high sensitive and low dark current 2160 elements image sensor. The sensor can be used for facsimile, imagescanner and OCR, The device contains a row of 2160 photodiodes, which provide a 8 lines/mm (200 DPI) resolution

TCD120AC

Contextual Info: TCD120AC The TCD120AC is a contact type CCD linear image sensor. The device is consist of 5 staggered high sensitivity CCD chips. The device contains a row of 4800 photodiodes which provide a A00 dots/inch resolution across an A3 size paper. By the aid of analog line memories fabricated

TC17G

Abstract: Photodiode Array 32 element tcd storage gate ccd TCD128AC
Contextual Info: TCD128AC The TCD12P.AC is a contact type CCD linear image sensor. The device is consist of 4 CCD chips which are collinearly arranged. The device contains a row of 1728 photodiodes which provides a 8 dots/mm resolution across A4 size 216mm document. And this device includes

Contextual Info: Data Sheet Pacific Silicon Sensor Inc. Series 5: High Speed Epitaxial P-I-N Photodiodes In addition to these photodiodes, Pacific Silicon Sensor can design and manufacture other devices, in differing sizes or shape, in original packaging and/or with similar specifications; both

Contextual Info: Photodiodes Surface mount type Side view RPMD-0101W1 Datasheet lDimensions (Unit : mm) lApplications Note : Unspecified tolerance shall be 0.15. • Car navigations, Car audios • Household applications • OAs, FAs • PCs, peripheral devices • Other general-purpose applications

IC vertical lg

Abstract: MW3736CKH
Contextual Info: CCD Area Image Sensor MW3736CKH 11mm 2/3 inch 768H CCD Area Image Sensor • Overview ■ Pin Assignments The MW3736CKH is a 11mm (2/3 inch) Interline Transfer CCD (ITCCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section

SD-041-12-22-211

Abstract: T-23 2901222041 SD 102 M
Contextual Info: BLUE ENHANCED PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.20 A/W min., 0.23 A/W typ. @ 450nm Total Area mm2 SD 041-12-22-011 isolated –211 0.85 SD 076-12-22-011 isolated -211 2.91 SD 100-12-22-021 isolated -221 5.1 SD 172-12-22-021 isolated -221

VCSEL die bonding

Abstract: SATURN PY-CM11
Contextual Info: AXT PRODUCT INFORMATION 1300/1550nm InGaAs Monitoring PIN Photodiodes Part number: PY-CM11 Characteristics T=300K Conditions Wavelength range Responsivity Dark current Reverse breakdown Capacitance -3 V 1µA - 3 V, 1 MHz Min. 910 0.8 Typical 1310 0.85 Max.

H6779

Abstract: TPMH9003E01 H5784 R7400U BMOM AD H5783 H5773 H6780 pmt divider circuit pmt amplifier circuit
Contextual Info: PHOTOSENSOR MODULES H5773/H5783/H6779/ H6780/H5784 SERIES High Sensitivity, Wide Dynamic Range Fast Time Response The Photosensor Module is an optical sensor with extremely high sensitivity, capable of detecting light levels 1/10000 as low as those detectable with semiconductor photodiodes.

Contextual Info: Data Sheet Pacific Silicon Sensor Inc. Series 5: High Speed Epitaxial P-I-N Photodiodes In addition to these photodiodes, Pacific Silicon Sensor can design and manufacture other devices, in differing sizes or shape, in original packaging and/or with similar specifications; both

PN303

Contextual Info: Panasonic PIN Photodiodes PN303 PIN Photodiode For optical control systems • Features • Fast response which is well suited to high speed m odulated light detection : tr, tf = 50 ns typ. • High photodetection sensitivity and wide dynamic responsivity

PD 2028 b

Contextual Info: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes

LIGHT POSITION CONTROL

Abstract: PNA3201F
Contextual Info: Panasonic PIN Photodiodes PNA3201F PIN Photodiode For optical control systems • Features • High sensitivity and low dark current • For one-dim ensional light-point position detection • G ood positional linearity • Small plastic package I Absolute Maximum Ratings Ta = 25°C

VCSEL die bonding

Abstract: PY-CT11 InGaAs 0.85 um
Contextual Info: Preliminary specification 1300/1550nm 10Gbps Gbps InGaAs PIN Photodiodes Part number: PY-CT11 Characteristics T=300K Bandwidth Wavelength range Responsivity Dark current Reverse breakdown Capacitance Rise/Fall time Conditions -3 V -3 V 1µA - 3 V, 1 MHz

G701

Abstract: tip 1050 G705 ga01 G301 G302 G501 G502 G702 G703
Contextual Info: iC-OG 8-BIT DIFFERENTIAL SCANNING OPTO ENCODER FEATURES APPLICATIONS ♦ Monolithic construction with integrated photodiodes ensures excellent matching and technical reliability ♦ Short track spacing of 600µm ♦ Elimination of dark currents through differential scanning

Contextual Info: InGaAs PIN photodiodes G8421/G8371/G5851 series Long wavelength type Cut-off wavelength: 1.85 to 1.9 —m Features Applications Long cut-off wavelength: 1.85 to 1.9 —m Optical power meter 3-pin TO-18 package: low price Gas analyzer Thermoelectrically cooled TO-18 package: low dark current

Contextual Info: Si PIN photodiodes S2506 series S6775 series S6967 Plastic SIP single in-line package S2506/S6775 series and S6967 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature high sensitivity, highspeed response and large active areas.

Contextual Info: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329 photosensor amplifier S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C9329 is used with the

Contextual Info: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance

far uv photodiode

Abstract: Radiation Detector
Contextual Info: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.

Contextual Info: PHOTODIODE GaAs PIN photodiode G8522 series High-speed response at low reverse voltage G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz gigahertz operation even at a low reverse voltage (2 V or less). Please contact our sales office with your specific needs.

Contextual Info: InGaAs PIN photodiodes G8422/G8372/G5852 series Long wavelength type Cut-off wavelength: 2.05 to 2.1 —m Features Applications Cut-off wavelength: 2.05 to 2.1 —m Gas analyzer 3-pin TO-18 package: low price Water content analyzer TE-cooled type TO-8 package: low dark current

Contextual Info: 6112640 MICROPAC INDUSTRIES MICROPAC INDUSTRIES INC INC 91D ~T1 00360 D y . iff.g I DF|bliab4U S 66008 SERIES OPTOTRANSFORMER JUNE, 1984 DESCRIPTION: The 66008 series optotransformer consists of a pair of matched silicon photodiodes optically-coupled and spectrally

Borosilicate

Contextual Info: Si photodiodes S2386 series For visible to IR, general-purpose photometry Features Applications High sensitivity Analytical instruments Low dark current Optical measurement equipment High reliability Superior linearity General ratings / Absolute maximum ratings