PHOTOTRANSISTOR, 850NM Search Results

TEMIC S289P

Abstract: S289P Telefunken Phototransistor
Contextual Info: S289P Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with lp >850nm. A plastic

ic 8253

Abstract: phototransistor, 850nm TEKT5400 8239 TEKT5400S TSKS5400S
Contextual Info: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package.A small recessed lens provides a high sensitivity in a low profile case.

Contextual Info: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package.A small recessed lens provides a high sensitivity in a low profile case.

Contextual Info: S289P Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally

S289P

Abstract: phototransistor, 850nm
Contextual Info: S289P Vishay Semiconductors Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally

S289P

Abstract: Telefunken Phototransistor
Contextual Info: S289P Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally

S289P

Abstract: Telefunken Phototransistor
Contextual Info: S289P Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally

phototransistor no s289p

Abstract: S289P s289
Contextual Info: S289P Vishay Semiconductors Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally

phototransistor no s289p

Abstract: S289P
Contextual Info: S289P Vishay Semiconductors Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally

lens emitter phototransistor

Contextual Info: S 289 P TELEFUNKEN Semiconductors Silicon Darlington Phototransistor Description S 289 P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally

MID-14H22

Contextual Info: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-14H22 Description Package Dimensions Unit: mm inches The MID-14H22 is a NPN silicon phototransistor mounted in a lensed ,black plastic and side looking package. 4.00 ± .08 (.158±.003) 1.22 .048 4.12 (.162) Features

8239

Abstract: 8257 ic 8255 phototransistor, 850nm S350P
Contextual Info: S350P Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable

30H22

Abstract: MID-30H22
Contextual Info: T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-30H22 Package Dimensions The MID-30H22 is a NPN silicon phototransistor mou- Unit : mm inches nted in a lensed , special dark plastic package.The lens- ψ3.00 (.118) ing effect of the package allows an acceptance half view

MID-40H22

Abstract: phototransistor, 850nm
Contextual Info: TO-46 PACKAGE NPN PHOTOTRANSISTOR MID-40H22 Description Package Dimensions The MID-40H22 is a NPN silicon phototransistor mounted in a lensed, special dark plastic package. Unit :mm inches 4.75 (.187) 45° 5.80 (.228) Features l l l l l COLLECTOR INDICATOR

8239

Abstract: S350P of ic 8255
Contextual Info: S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily

Contextual Info: S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily

S350P

Abstract: ic 8255 phototransistor, 850nm
Contextual Info: S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily

ic 8255

Abstract: S350P
Contextual Info: TELEFUNKEN Semiconductors S 350 P Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are

Contextual Info: _ S289P w m m f _ ▼ Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epi­ taxial planar Darlington phototransistor in a standard T-1 0 3 mm package. The epoxy package itself is an IR filter, spectrally

Contextual Info: S350P Vishay Semiconductors Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily

MID-33H22

Contextual Info: T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-33H22 Package Dimensions The MID-33H22 is a NPN silicon phototransistor mou- Unit: mm inches nted in a lensed, special dark plastic package. The lens- ψ3.00 (.118 ing effect of the package allows an acceptance half view

8239

Abstract: 8257 ic 8255 IC 8256 S350P
Contextual Info: S350P Vishay Semiconductors Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily

S350P

Contextual Info: S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily

BPW78

Abstract: BPW78A BPW78B bpw 104
Contextual Info: BPW78 Silicon NPN Phototransistor Description BPW78 is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case. The epoxy package itself is an IR filter, spectrally