PHOTOTRANSISTOR 281 Search Results

Contextual Info: OKI electronic components T34_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T34 silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed metal can package.

SPS-181C

Abstract: SPS-189C SPS-235C SPS-281C SPS-289C SPS-135C SPS289 sps28 SPS2 S-181C
Contextual Info: Phototransistor Phototransistor typical characteristics 7 * S •Bs B P ow er dissipation ï - v £<f c * 9 # * * S t o • Â # îfiia f to < M ^ È t o Fig. 2,3) - ^ Y ÿ 'y 'J 7 ^ n u \ y s s v > iO X , V ^ 7 \ <£*)*% • Îiln l^ t É <£<9 ÏF g S ifc - J S B IiS J Îfê 'îi ( P c -T a )

Phototransistor 281

Abstract: IC 2 5/clarostat
Contextual Info: R-280/281 Series CLAROSTAT Reflective Optical Switches SBflORS AND CONTROLS QRCXP Absolute Maximum Ratings TA = 25°C unless otherwise stated. Features discrete terminals or wire leads11) phototransistor output (H-280) photodarlington output (R-281) two sensitivity ranges (each sensor)

Contextual Info: IL352 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage

Contextual Info: IL352 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage

IL352

Abstract: VDE0884
Contextual Info: IL352 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage

Contextual Info: IL352 VISHAY Vishay Semiconductors Phototransistor Optocoupler Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage • Fast Switching Times

S79 diode

Abstract: NCR100
Contextual Info: IL352 SIEMENS PHOTOTRANSISTOR OPTOCOUPLER Preliminary Data Sheet Package Dimensions in Inches Pins 6&7 .224 5.7 .346 (S.79) 216(5.5) -326(8.3) • Pin On ID y DESCRIPTION Maximum Ratings Emitter Reverse Voltage. 6 V

Contextual Info: IL352 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage

Contextual Info: IL352 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage

Contextual Info: O K I electronic components T34_ Silicon NPN Epitaxial Planar Phototransistor_ GENERAL DESCRIPTION The planar structure of the OKI T34 silicon phototransistor makes it a highly sensitive photo­ detector. High reliability is ensured by a hermetically sealed metal can package.

Contextual Info: Data Sheet PS2705-1 R08DS0093EJ0300 Rev.3.00 Jan 29, 2013 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI PHOTOCOUPLER DESCRIPTION The PS2705-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

Contextual Info: Data Sheet PS2702-1 R08DS0099EJ0300 Rev.3.00 Jan 29, 2013 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2702-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected phototransistor.

Contextual Info: IL352 Phototransistor Optocoupler FEATURES • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO=30 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS*

IL352

Contextual Info: IL352 Phototransistor Optocoupler Preliminary FEATURES • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 1768 VRMS • High Collector-Emitter Voltage, VCEO=30 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS*

R705A

Contextual Info: Data Sheet PS2705A-1 R08DS0073EJ0500 Rev.5.00 Jan 9, 2013 HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER DESCRIPTION The PS2705A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor to realize an excellent cost performance.

IL352

Abstract: CTR34
Contextual Info: IL352 Phototransistor Optocoupler FEATURES • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO=30 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS*

r701a

Abstract: R08DS0071EJ0600
Contextual Info: Data Sheet PS2701A-1 R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER DESCRIPTION The PS2701A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor to realize an excellent cost performance.

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA MaBe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features • Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm

IL352

Contextual Info: IL352 Phototransistor Optocoupler Preliminary Data Sheet FEATURES • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 2500 VRMS • High Collector-Emitter Voltage, VCEO=30 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS*

310FA

Abstract: Q62702-P1673 Q62702-P874 Phototransistor 281
Contextual Info: SFH 310 SFH 310 FA SFH 310 SFH 310 FA feof6653 feof6653 Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im

HMHA2801

Contextual Info: HMHAA280, HMHA2801 Series, HMHA281 Half Pitch Mini-Flat Package 4-Pin Optocouplers Features Description • Compact 4-pin package 2.4mm maximum standoff The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The

HMHA2801

Contextual Info: HMHAA280, HMHA2801 Series, HMHA281 Half Pitch Mini-Flat Package 4-Pin Optocouplers Features Description • Compact 4-pin package 2.4mm maximum standoff The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The

HMHA2801

Abstract: HMHA281 HMHAA280 HMHA2801A HMHA2801B HMHA2801C
Contextual Info: HMHAA280, HMHA2801 Series, HMHA281 Half Pitch Mini-Flat Package 4-Pin Optocouplers Features Description • Compact 4-pin package 2.4mm maximum standoff The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The