PHOTOTRANSISTOR 500-600 NM Search Results
PHOTOTRANSISTOR 500-600 NM Datasheets Context Search
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fototransistor ir
Abstract: phototransistor peak 550 nm
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D-93055 fototransistor ir phototransistor peak 550 nm | |
4n35 optocoupler spice model
Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
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TS-16949 ISO-14001, 4n35 optocoupler spice model L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011 | |
phototransistor peak 550 nm
Abstract: Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601
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GEO06840 phototransistor peak 550 nm Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601 | |
9260 transistorContextual Info: SFH 9260 Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector 6.2 5.8 3.4 3.0 4.2 3.8 2.1 1.7 0.0.1 0.15 0.13 Vorläufige Daten/Preliminary Data 0.5 0.3 6 5 4 1 |
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GEO06840 sfh9260 OHF00499 OHO02260 9260 transistor | |
fototransistor
Abstract: phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260
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GEOY6840 fototransistor phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260 | |
fototransistorContextual Info: 2013-08-14 Infrared-Emitter 850 nm and Si-Phototransistor IR-Emitter (850 nm) und Si-Fototransistor Version 1.0 SFH 7250 Features: Besondere Merkmale: • Available on tape and reel • SMT package with IR emitter (850 nm) and Si-phototransistor • Suitable for SMT assembly |
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D-93055 fototransistor | |
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Contextual Info: Dialight 591 - 7602-1XX True Surface Mount LED COLLECTOR ID Part No.* Configuration 591-7602-1 xx 900 nm Phototransistor Applications 3.0 • Control and drive circuits LED LEAD SOLDERING SURFACE A I 1-120] “ *i • Copiers • Proximity Sensors COLLECTOR |
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7602-1XX | |
VEMT2020
Abstract: npn phototransistor VEMT2000X01 VEMT2020X01 IPC 7351 2 pin phototransistor P 250 20594 VSMB2000X01 VEMT2520 VEMT2000
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VEMT2000X01, VEMT2020X01 AEC-Q101 VEMT2000X01 VSMB2000X01 J-STD-020 2002/95/EC 2002/96/EC VEMT2000X01 VEMT2020 npn phototransistor VEMT2020X01 IPC 7351 2 pin phototransistor P 250 20594 VSMB2000X01 VEMT2520 VEMT2000 | |
phototransistor 650 nm
Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
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Q62702-P1634 OHF01924 GPL06924 phototransistor 650 nm Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor | |
fototransistor
Abstract: phototransistor peak 550 nm fototransistor led
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331-JK Q65110A2821 D-93055 fototransistor phototransistor peak 550 nm fototransistor led | |
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Contextual Info: VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm |
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VEMT2000X01, VEMT2020X01 AEC-Q101 VEMT2000X01 VSMB2000X01 J-STD-020 2002/95/EC 2002/96/EC VEMT2000X01 | |
transistor h 331
Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
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331-JK Q62702-P1634 GPLY6924 transistor h 331 c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm | |
VSMB20
Abstract: VSMG2020 VEMT2000X01 VSMB2000X01 VSMY2850 VEMD25
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VEMT2000X01, VEMT2020X01 AEC-Q101 VEMT2000X01 VSMB2000X01 J-STD-020 2002/95/EC 2002/96/EC VEMT2000X01 VSMB20 VSMG2020 VSMB2000X01 VSMY2850 VEMD25 | |
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Contextual Info: SMALL TYPE PHOTOTRANSISTOR PH110 FEATURES_ DESCRIPTION_ • HIGH SENSITIVITY lc = 400 |iA TYP, H = 50 |xW/cm2 • HIGH SPECTRAL SENSITIVITY Sensitivity active wavelength: 820 nm TYP The PH110 is a small type high sensitivity phototransistor |
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PH110 PH110 SE310 b427S2S 00bS3G2 b427525 00bS303 | |
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phototransistor 650 nmContextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar |
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331-JK Q65110A2821 phototransistor 650 nm | |
phototransistor 650 nm
Abstract: phototransistor peak 550 nm
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331-JK Q65110A2821 2006-0y phototransistor 650 nm phototransistor peak 550 nm | |
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Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar |
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transistor d 331
Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331
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331-JK Q62702-P1634 transistor d 331 D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331 | |
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Contextual Info: !D monolithic 13 NPN phototransistor array EEEEEEEEEEEEEEEECFCA93298C Optical device consisting of a monolithic 13 silicon NPN phototransistor array chip with high gain uniformity for the output signals. The active area of each phototransistor is 0.2 x 0.45 |
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13-bits 030mm 12234556667832897A8B5C | |
Q65110A2741
Abstract: SFH7250
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D-93055 Q65110A2741 SFH7250 | |
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Contextual Info: D!" 13 bit absolute encoder chip 0.6mm EEEEEEEEEEEEEEEECFCA93298C OIT19C consists in a silicon phototransistor’s monolithic array of 13 elements. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon |
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OIT19C 300-900nm. 030mm 12234556667832897A8B5C OIT19C | |
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Contextual Info: !" MONOLITHIC 9 NPN PHOTRANSISTOR ARRAY EEEEEEEEEEEEEEEECFCA93298C OIT26 consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is |
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OIT26 300-900nm. 030mm 12234556667832897A8B5C | |
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Contextual Info: !" incremental encoder chip 0.6 mm EEEEEEEEEEEEEEEECFCA93298C OIT8C consists monolithic array. in two silicon phototransistor’s The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is |
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300-900nm. 030mm 12234556667832897A8B5C | |
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Contextual Info: !" enhanced absolute encoder chip EEEEEEEEEEEEEEEECFCA93298C OIT7C consists in three silicon phototransistor’s monolithic arrays. The two arrays of six devices are placed on top and bottom of the device, they represent each bit of the encoder disc. A further array of four |
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030mm 12234556667832897A8B5C | |