PHOTOTRANSISTOR DATASHEET Search Results

Infrared Phototransistor

Abstract: "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C
Contextual Info: QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. NPN Silicon Phototransistor

Infrared Phototransistor

Abstract: QEE213 QSE213 QSE214
Contextual Info: QSE213/QSE214 Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. NPN Silicon Phototransistor

Contextual Info: QSB363 / QSB363GR / QSB363YR / QSB363ZR Subminiature Plastic Silicon Infrared Phototransistor Features Description • • • • • • • • The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. NPN Silicon Phototransistor

optocoupler crossreference

Abstract: fairchild optocoupler cross reference MOC256 H11AA1M H11AA2M MOTOROLA Cross Reference Search H11L1M H11AA4M MOC3062M MOC3081M
Contextual Info: AC Input Phototransistor Small Outline Surface Mount Optocoupler MOC256 The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the

QEB363

Abstract: QEB373 QSB363 QSB363C Infrared Phototransistor
Contextual Info: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°

Contextual Info: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°

Contextual Info: 2.0x1.25mm PHOTOTRANSISTOR Part Number: APT2012P3BT Description Features  2.0mmx1.25mm SMT LED,0.75mm thickness. Made with NPN silicon phototransistor chips.  Mechanically and spectrally matched to infrared emitting LED lamp.  Package: 2000pcs / reel .

Contextual Info: 2.0x1.25mm PHOTOTRANSISTOR Part Number: APT2012P3BT Description Features z 2.0mmx1.25mm SMT LED,0.75mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package: 2000pcs / reel .

Contextual Info: 1.6X0.8mm PHOTOTRANSISTOR Part Number: KP-1608P1C Description Features 1.6mmX0.8mm SMT LED, 1.1mm thickness. Made with silicon phototransistor chips. Mechanically and spectrally matched to infrared emitting LED lamp. Water clear lens. Package: 2000pcs / reel.

Contextual Info: 3.0X1.5mm PHOTOTRANSISTOR Part Number: APL3015P3C Description Features z 3.0mmx1.5mm SMT LED, 1.4mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp. z Package : 2000pcs / reel.

Contextual Info: 3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: KPA-3010P3C Description Features z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp.

Contextual Info: 3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: APA3010P3BT-GX Description Features z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp.

Contextual Info: 3.5x2.8mm PHOTOTRANSISTOR Part Number: AA3528P3S Description Features z Mechanically and spectrally matched to the infrared emitting Made with NPN silicon phototransistor chips. LED lamp. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.

Contextual Info: 3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: KPA-3010P3C Description Features Made with NPN silicon phototransistor chips. z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. z Mechanically and spectrally matched to the infrared emitting LED lamp.

Contextual Info: 3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: KPA-3010P3C Description Features z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp.

Contextual Info: 3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: APA3010P3BT-GX Description Features z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp.

H11AA4M

Abstract: H11AA2M H11AA1M H11AA1SM H11AA1SR2M H11AA1TM H11AA1VM H11AA3M H11AA1T H11AA1MS
Contextual Info: H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features Description • Bi-polar emitter input The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.

Contextual Info: PHOTOTRANSISTOR Part Number: L-3DP3BT Description Features z Mechanically and spectrally matched to the infrared emitting Made with NPN silicon phototransistor chips. LED lamp. z Blue transparent lens. z Daylight filter. z RoHS compliant. Package Dimensions

H11AA4M

Abstract: all datasheet phototransistor H11AA1 equivalent H11AA2M circuit infrared phototransistor for tv H11AA1SR2VM H11AA1M H11AA1SM H11AA1SR2M H11AA1TM
Contextual Info: H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features Description • Bi-polar emitter input The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.

DS3002

Abstract: H11AA1 H11AA2 H11AA3 H11AA4 H11AAX
Contextual Info: AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS H11AA1 H11AA3 H11AA2 H11AA4 DESCRIPTION The H11AAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. 6 1 FEATURES • • •

QSC11

Contextual Info: QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package. Tight production distribution PACKAGE DIMENSIONS

H11DX

Abstract: 4N38 H11D1 H11D2 H11D3 H11D4 DSA00106336
Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

H11DX

Abstract: H11D4.300 H11D12 4N38
Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage