PHOTOTRANSISTOR PEAK WAVE SENSITIVITY 600 NM Search Results

fototransistor

Abstract: phototransistor peak 550 nm fototransistor led
Contextual Info: 2009-03-05 SMT Multi TOPLED SMT Multi TOPLED Version 1.0 SFH 331 Features: Besondere Merkmale: • SMT package with red emitter 635 nm and Si-phototransistor • Suitable for SMT assembly • Available on tape and reel • Emitter and detector can be controlled separately

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

Contextual Info: PS3G01X Through-hole Phototransistor/φ3 Type Features Package Product features φ3 type, Water clear epoxy ・ Photo Current : 1.0mA TYP. VCE=5V,Ee=1mW/cm2 ・ Dome Lens ・ Lead–free soldering compatible ・ RoHS compliant Peak Sensitivity Wavelength

Contextual Info: 3mm Photodiode PD204-6B Features •Fast response time •High photo sensitivity •Small junction capacitance •Pb free •This product itself will remain within RoHS compliant version. Description PD204-6B is a high speed and high sensitive PIN photodiode in a standard 3Φ plastic package.

GP1A101C2KSF

Abstract: pc3sh13 PC3HU7 GP1A054 GP1A173 GP1A173LCS2F GP2Y0A60 GP1A204HCS0 GP1A054RDKLF GP1A057SGKLF
Contextual Info: OPTO PHOTOCOUPLER LINEUP • Photocoupler Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage, etc. PC35x series/PC451J00000F 56 Low input current PC367NJ0000F

IRM0101

Abstract: IRM0208-A538 L327EIR1BC L-314EIR1C L-31ROPT1C L-31ROPT1D1 L-31ROPT1D2 L-31ROPT1XX L-32ROPT1D1 L-32XOPT1XX
Contextual Info: PL- IRM0101- 3 RECEIVER MODULE ABSOLUTE MAXIMUN RATING: Ta=25ºC PARAMETER Test Conditions Symbol Value Supply Voltage - Vcc 4.5~5.5 V Output Voltage - Vout 4.5~5.5 V Output Current - lo 5 mA Junction Temperature - Ti 100 ºC Storage Temperature Range - Tstg

Contextual Info: PS3G01X Through-hole Phototransistor/φ3 Type Features φ3 type, Water clear epoxy Package Product features ・ Photo Current : 1.0mA TYP. VCE=5V,Ee=1mW/cm2 ・ Dome Lens ・ Lead–free soldering compatible ・ RoHS compliant Peak Sensitivity Wavelength

Contextual Info: PS3G01X Through-hole Phototransistor/φ3 Type Features φ3 type, Water clear epoxy Package Product features ・ Photo Current : 1.0mA TYP. VCE=5V,Ee=1mW/cm2 ・ Dome Lens ・ Lead–free soldering compatible ・ RoHS compliant Peak Sensitivity Wavelength

phototransistor peak wave sensitivity 600 nm

Abstract: mm glass lens phototransistor glass lens phototransistor kpt801h
Contextual Info: Si Phototransistor KPT801HB KPT801HB H1 ø4.65±0.1 Glass lens 4.5 • NPN phototransistor packaged in a 2 leads TO-18 • Glass lens or visible-cut black epoxy lens • Low leak current 6.6 max Features • Optical switches • Optical encoders • Photo-isolator

IRM0101

Abstract: irm01 L327EIR1BC IRM0101-1 L-31ROPT1XX L-32XOPT1XX L-514EIR1C IRM0208-A538 L-31ROPT1C L-SC1R9PD1
Contextual Info: PL- IRM0101-1 RECEIVER MODULE ABSOLUTE MAXIMUN RATING: Ta=25ºC PARAMETER Test Conditions Symbol Value Supply Voltage - Vcc 3~5 V Output Voltage - Vout 3~5 V Output Current - lo 2.5 mA Junction Temperature - Ti 100 ºC Storage Temperature Range - Tstg -25

mm glass lens phototransistor

Abstract: phototransistor peak wave sensitivity 600 nm kpt801h
Contextual Info: Si Phototransistor KPT801H KPT801H H1 ø4.65±0.1 Glass lens 4.5 • NPN phototransistor packaged in a 2 leads TO-18 • Glass lens • Low leak current 6.6 max Features • Optical switches • Optical encoders • Photo-isolator • Camera stroboscopes • Infrared sensors

phototransistor peak wave sensitivity 600 nm

Abstract: C8060
Contextual Info: Si Phototransistor KPT801C KPT801C Features • NPN phototransistor C7 +0.3 ø2.96 –0.1 Transparent epoxy resin Black Ceramic 2.0 • Low leak current +0.3 3.2 –0.2 • Ceramic package • Optical switches ø0.45 • Optical encoders ø0.3 15.5±1.0 Applications

phototransistor peak wave sensitivity 600 nm

Abstract: KPT08
Contextual Info: Si Phototransistor KPT081M31 KPT081M31 Features φ3.8±0.2 • NPN phototransistor • Transparent epoxy potting • Low leak current φ3.0±0.2 24MIN 1.5MAX 5.3±0.5 • Optical switches • Optical encoders • Photo-isolator • Camera stroboscopes • Infrared sensors

Q62702-P5209

Contextual Info: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet

phototransistor sensitive to red light

Abstract: SML-612UT phototransistor sensitive to green light SML-612 smd ic 611 SML612YT 0603 led red, green, white phototransistor sensitive to yellow light SML-710MW SML-310F
Contextual Info: Opto product solutions www.rohm.co.uk Surface Mount Type Illuminance Sensor RPM-075PT Items Symbol Min. Ave. Max. Unit Condition mA µA µA nm VCE=5V, E950=500 Ix VCE=3V, E600=50 Ix VCE=10V Light current 1 Light current 2 Ic 950 Ic 600 0.25 11 0.4 19 0.6 29

J-STD-020D

Abstract: VSML3710 phototransistor peak wave sensitivity 600 nm VEMT4700-GS08
Contextual Info: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

PC1231xNSZ0F

Abstract: PC3HU7 PC 870 SHARP opto coupler GP2Y0A41SK0F GP2A222HCKA GP1S195HCPSF Sharp IS471FE GP1UX31QS pc3sh13 gp1a047rbzlf
Contextual Info: ✱❆▲❊❄❆_✲.❃ook ✷❂❈❆ ✩✪ ✾❆❅n❆•❅❂❖, J❑l❖ ✤✫, ✥✣✣✪ ✤:✣✦ ✷M OPTO PHOTOCOUPLER INDEX TREE ■ Photocoupler Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series

Contextual Info: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

phototransistor 650 nm

Abstract: phototransistor peak wave sensitivity 600 nm fototransistor led
Contextual Info: Multi TOPLED mit LED und Fototransistor-Detektor Multi TOPLED with LED and Phototransistor-Detector Lead Pb Free Product - RoHS Compliant SFH 7225 SFH 7226 Wesentliche Merkmale Features • Anzeigefunktion kann durch eingebauten Fototransistor überwacht werden

ta 7226

Abstract: Soldering profile S_6001
Contextual Info: Multi TOPLED mit LED und Fototransistor-Detektor Multi TOPLED with LED and Phototransistor-Detector Lead Pb Free Product - RoHS Compliant SFH 7225 SFH 7226 Wesentliche Merkmale Features • Anzeigefunktion kann durch eingebauten Fototransistor überwacht werden

Q62702-P5043

Contextual Info: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität

Contextual Info: Multi TOPLED mit LED und Fototransistor-Detektor Multi TOPLED with LED and Phototransistor-Detector Lead Pb Free Product - RoHS Compliant SFH 7225 SFH 7226 SFH 7226: Nicht für Neuentwicklungen / Not for new designs Wesentliche Merkmale Features • Anzeigefunktion kann durch eingebauten

RPI-2501

Abstract: RPI-2500 ROHM RPI-2500 IR phototransistor sensor RPI-151 RPR-220PC30N SIM-041ST IR phototransistor SIM-031ST ROHM RPI-151
Contextual Info: Innovations Embedded Optical Sensors  Remote ROHM MarketingUSA Controls  Copiers  Cell Phones Selection Guide Optical Sensors from ROHM Semiconductor ROHM Infrared Optical Sensors operate in the near infrared range 700nm - 1400nm of the electromagnetic

Q62702-P5043

Abstract: ee 3201 IC 3201 Q62702-P5209
Contextual Info: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität