PHOTOTRANSISTOR PHILIPS Search Results

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D bbS3131 OOEQ^Sl T CNX38 OPTOCOUPLER Optically coupled isolator consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r TTL integrated circuits. Features

CNX48 U

Contextual Info: N AUER PHILIPS/DISCRETE 5SE D bbS3T31 QDa01fl3 1 CNX48 T - V - g f OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line D IL envelope. Features

CNX48

Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
Contextual Info: I 1 N AUER PHILIPS/DISCRETE SSE D • bbS3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features

PHILIPS CNX38

Abstract: CBC 184 transistor CNX38 CNX38U 181 OPTOCOUPLER
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • fc.bS3tm Jl GG2GT51 T CNX38 OPTOCOUPLER O ptically coupled isolator consisting o f an infrared emitting G aAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r T T L integrated circuits.

CNX71

Contextual Info: [ [ N AMER PHILIPS/DISCRETE 2SE D • kbS3*m QQSIOHS 0 ■ Jl CNX71 HIGH-VOLTAGE OPTOCOUPLER The CNX71 is an optocoupler consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line OIL plastic envelope. The base is not connected.

Transistor 2TY

Abstract: 2ty transistor Transistor+2TY .2ty transistor npn .2ty transistor
Contextual Info: SL5504 ÛUALITY TECHNOLOGIES CORP 57E T> 7Mbbô51 □ÜDM?Db 1ÛT IÛTY OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor with accessible base. Plastic envelope. Suitable for TTL integrated circuits.

Contextual Info: N AMER PHILIPS/DISCRETE aSE D • ^ 5 3 1 3 1 DOHIOO? _ JL_ CNX62 m r - - 8 5 HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line Dl L plastic envelope. The base is not connected.

CNX62

Abstract: BS415 DDS1015
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • b b S S ^ l GOHIQÜ? .1 ■ CNX62 T - H l - S Z HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.

Contextual Info: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.

Contextual Info: 4N29 4N30 4N31 ÛUALITY TECHNOLOGIES CORP S7E ]> 4N32 4N33 T m4 • Ö TY s a OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in-line DIL envelope.

CNX62

Abstract: BS415 sot174
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbSB TBl GOHIQÜ? .1 ■ Jl CNX62 r - 4 | - 8 5 H IG H -VO LTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor irr a dual-in-line Dl L plastic envelope. The base is not connected.

CNX62

Abstract: BS415
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53*131 GOHIOO? .1 ■ CNX62 r - 4 1 - g s HIGH-VO LTAGE O PTO CO U PLER T h e C N X 6 2 is an optocoupler consisting of an infrared emitting G aA s diode and a silicon npn phototransistor in a dual-in-line D IL plastic envelope. T h e base is not connected.

Contextual Info: [[ N AMER PHILIPS/DISCRETE 25E D bb53T31 0021025 0 • CNX71 T - 4 - I - ^ 3 H IG H -V O L T A G E O P T O C O U P L E R The CNX71 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.

Transistor 2TY

Abstract: .2ty transistor npn
Contextual Info: CNX48U Û U A L IT Y T E C H N O L O G I E S CORP 7Mhbfi51 OQO M Sb ? 72T • Û T Y S7E D OPTOCOUPLER % Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DIL envelope.

CBC 184 transistor

Abstract: CNX35U Transistor 2TY CBC 184 c transistor
Contextual Info: CNX35U CNX36U PM VO O I I Û U A L IT Y T E C H N O L O G I E S CORP S7E D 7 4 b b 6 5 1 G G G 4 53 4 EfiS • ■ 3T Y — % OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r TTL integrated circuits.

Transistor 3TY

Contextual Info: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life

CNY17G-3

Abstract: CNY17G3
Contextual Info: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with

diode Optocouplers

Abstract: 104 m1e tw23 phototransistor philips NY17G CNY17GF
Contextual Info: 711002b GQ3Q5E4 S « P H I N MIE D PHILIPS INTERNATIONAL r-y/-83 Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with

Contextual Info: Philips Sem iconductors Product specification 7 H V D U A L I T Y T E C H N O L O G I E S C0 RP S7E D 74fc>bfl51 000472*1 7fi7 • 3 T Y FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external creepage distance of 8 mm

CNX71

Abstract: CNX71A CNX72A SOT229 phototransistor philips
Contextual Info: 711062b P H ILIP S INTERNATIONAL 41E 0030S0Ô 7 • P H IN D T - v / '« 5 _ Product specification Philips Semiconductors CNX71A/CNX72A High-voltage optocouplers FEATURES • High current transfer ratio and a low saturation voltage, making

453 optocoupler

Contextual Info: Product specification Philips Semiconductors CNX71A/CNX72A High-voltage optocouplers 3UALITY T E C H N O L O G I E S CORP 57E D 7Mbbfl51 O O Q M S q Q OGI • ( 3 T Y FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with

phototransistor philips

Abstract: 004583 BS415 BS7002 SL5582 SL5583 diode ja diode Optocouplers MBB038
Contextual Info: PHILIPS INTERNATIONAL 41E ]> 711GÖ2b 003D54Ö û • PHIN T - V / - « Philips Sem iconductors 3 Product specification High-voltage optocouplers SL5582/SL5583 FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external

234 optocoupler

Abstract: SOT230
Contextual Info: Product specification Philips Sem iconductors High-voltage optocoupier CNX62A FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of AC and DC Insulation 3750 V (RMS and

Contextual Info: I DEVELOPMENT DATA This data iheat contains advance information and specifications are subject to change without notice. • b b S a ^ l 1303067^ b ■ | CNS35 N AMER PHILIPS/DISCRETE SSE D f - 41 -^ 2 DUAL OPTOCOUPLER The CNS35 is a D U A L optocoupler in a SO T 97F dual-in-line (D1L 8 pin plastic envelope. Itconsistsof