PID05 Search Results
PID05 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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275 A 23 200 E
Abstract: MS312002-20PC Z105
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MS312002 200ns 220mW MS312002 MS312002-20 PID055 MS312002-20PC P32-2 275 A 23 200 E Z105 | |
MC5727
Abstract: TIL 729 A10C MS318003-20PC MS318003-20QC
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MS318003 200ns 275mW MS318003 PID059 MS318003-20PC P42-1 MS318003-20QC MC5727 TIL 729 A10C | |
Contextual Info: MOSEL MS314002 524,288 X 8 CMOS Mask Programmable ROM Compatible with All 32 Pin DIP EPROMs FEATURES DESCRIPTION • Access time: 200ns The M S 3 14 0 0 2 high performance R ead Only Memory is organ ized as 5 2 4 ,2 8 8 bytes by 8 bits It is designed to be compatible |
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200ns MS314002 MS314002-20 PID056 P32-2 | |
Contextual Info: MOSEL MS314003 256K X16, 512K X 8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • Two organizations selectable by BYTE pin The MS314003 is a CMOS Sl-gate mask-programmable static read only memory organized as 262,144 words by 16 bits. 524,288 words by 8 bits . |
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MS314003 200ns 220mW 40-pin 64-pin MS314003 PID057 | |
2943666671
Abstract: fr014 l289 FR2 material data sheet BEAD, WOUND FERRITE, 2943666671 FRQ24 FRQ05 fr024 Video cvbs 656 act ddr2 he ntc
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KS0123 2943666671 fr014 l289 FR2 material data sheet BEAD, WOUND FERRITE, 2943666671 FRQ24 FRQ05 fr024 Video cvbs 656 act ddr2 he ntc | |
Contextual Info: MOSEL MS314003 256KX16, 512K X 8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • T w o o rga n izatio n s se le cta b le by B Y TE pin T h e M S 3 14 0 0 3 is a C M O S S l-g a te m a sk-p ro g ra m m a b le static read only m e m ory o rga n ized a s 2 6 2 ,1 4 4 w ord s by 16 bits. |
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MS314003 256KX16, MS314003-20 PID057 MS314003-20PC MS314003-20QC P40-1 Q64-1 | |
PO403
Abstract: CTP01 ISA07 CTP04 BCT04 ISA08 CTP06 LIN06 BCT02 CTB04
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IEA01 IEA02 PO403 CTP01 ISA07 CTP04 BCT04 ISA08 CTP06 LIN06 BCT02 CTB04 | |
Contextual Info: MOSEL MS621000 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power ADVANCE INFORMATION FEATURES DESCRIPTION • Available in 80/100/120 ns (Max.) The MOSEL MS621000 is a high performance, low power CMOS static RAM organized as 131,072 words by 8 bits. |
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MS621000 MS621000 MS62TION S621000-80PC P32-2 S621000-80FC S32-1 621000L-80P | |
Contextual Info: MOSEL MS318002 1,048,576 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The MS318002 high performance Read Only Memory is organ ized as 1,048,576 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high |
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MS318002 200ns MS318002 275mW PID058 MS318002-20 P32-2 | |
Contextual Info: MOSEL MS312002 262,144X8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The MS312002 high performance Read Only Memory is organ ized as 262,144 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high |
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MS312002 144X8 200ns MS312002 220mW PID055 MS312002-20PC | |
Contextual Info: MOSEL MS64101 32K x 9 High Speed CMOS Static RAM with Parity Generator and Checker FEATURES DESCRIPTION • Organization: 32768 words x 9 bits The MOSEL MS64101 Parity RAM is a high speed, CMOS Static RAM with internal parity generation and parity error detection circuitry. It is organized as 32,768 x 9; the 9th |
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MS64101 MS64101 715mW 605mW 138mW 500mV MS64101-25NC MS64101-35NC MS64101-25FC MS64101-35FC | |
Contextual Info: MOSEL MS314002 524,288 X 8 CMOS Mask Programmable ROM Compatible with All 32 Pin DIP EPROMs FEATURES DESCRIPTION • Access time: 200ns The MS314002 high performance Read Only Memory is organ ized as 524,288 bytes by 8 bits. It is designed to be compatible |
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MS314002 200ns MS314002 220mW 275nW PID056 P32-2 | |
Contextual Info: MOSEL MS621000 A D V A N C E IN F O R M A T IO N 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power FEATURES DESCRIPTION • Available in 8 0 /1 0 0 /1 2 0 ns (M ax.) T h e M O S E L M S 6 2 1 0 0 0 is a high perform ance, low power C M O S static R A M organized as 1 3 1 ,0 7 2 words by 8 bits. |
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MS621000 PID051 MS621000-80PC MS621000-80FC MS621000L-80PC MS621000L-80FC MS621000-1OPC MS621000-10FC MS621000L-10PC | |
Contextual Info: MOSEL MS312002 262,144X8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The M S 3 12 0 0 2 high performance R ead Only Memory is organ ized as 2 6 2 .1 4 4 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high per |
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MS312002 144X8 200ns S312002-20 PID055 P32-2 S312002-20PC | |
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MS621000-10FC
Abstract: MS621000-80FC MS621000-80PC MS621000L-80PC P322
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MS621000 MS621000L MS621000 PID051 MS621000-80PC P32-2 MS621000-80FC S32-1 MS621000-10FC MS621000L-80PC P322 | |
Contextual Info: M OSEL MS314002 524,288 X 8 CMOS Mask Programmable ROM Compatible with All 32 Pin DIP EPROMs FEATURES DESCRIPTION • Access time: 200ns T h e M S 3 14 0 0 2 high performance Read Only Memory is organ ized as 5 2 4 ,2 8 8 bytes by 8 bits. It is designed to be compatible |
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MS314002 200ns 220mW 275nW MS314002 PID056 MS314002-20 P32-2 | |
Contextual Info: MOSEL MS312002 ~\J 262,144 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The MS312002 high performance Read Only Memory is organ ized as 262,144 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high |
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200ns 220mW MS312002 MS312002 PID055 MS312002-20PC P32-2 | |
AX1015Contextual Info: MOSEL / MS318002 / 1,048,576 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns T h e MSS 18002 high performance Read Only Memory is organ ized as 1,0 4 0,57 6 bytes by 8 bits It is designed to be compatible with all microprocessors and similar applications where high |
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200ns MS318002 PID058 P32-2 AX1015 | |
SAMSUNG DDR4
Abstract: FR24 FR29 speed pid.c SAMSUNG tv scheme FRQ24
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KS0123 SAMSUNG DDR4 FR24 FR29 speed pid.c SAMSUNG tv scheme FRQ24 | |
Contextual Info: KS0123 Multimedia ELECTRONICS DIGITAL VIDEO ENCODER The KS0123 multi - standard video encoder converts CCIR 656 8 - bit multiplexed digital component video into analog baseband signals. It output ccomposite video C V BS and S - Video simultaneoulsy at three |
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KS0123 KS0123 33b4b 32-PLCC-REC. 44-PLCC-SQ. | |
CE-v1H
Abstract: MS314003-20PC MS314003-20QC
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MS314003 200ns 220mW 40-pin 64-pin MS314003 A0-A17 PID057 CE-v1H MS314003-20PC MS314003-20QC | |
Contextual Info: MOSEL MS318002 1,048,576 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The MS318002 high performance Read Only Memory is organ ized as 1,048,576 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high per |
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MS318002 200ns 257mW 275nW MS318002 10OpF PID058 MS318002-20 | |
CI 576Contextual Info: MOSEL MS318002 1,048,576 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The M S 3 18 0 0 2 high performance R ead Only Mem ory is organ ized as 1,048,576 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high |
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S318002 200ns 275mW 275jiW MS318002 PID058 MS318002 MS318002-20 P32-2 CI 576 | |
Contextual Info: MOSEL MS314002 524,288 X 8 CMOS Mask Programmable ROM Compatible with All 32 Pin DIP EPROMs FEATURES DESCRIPTION • Access time: 200ns The MS314002 high performance Read Only Memory is organ ized as 524,288 bytes by 8 bits. It is designed to be compatible |
OCR Scan |
MS314002 200ns 220mW MS314002 S314002 100pF MS314002-20 PID056 |