PIN DIAGRAM OF BS170 Search Results

BS170

Abstract: MOSFET bs170 bs170 TO-92 pin diagram of bs170 TO-226 MARKING bs170 TO226 BS170RLRA BS170RLRAG to-92 mosfet
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)

Contextual Info: BS170 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR E M ir / I/uPOWEFTSEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown A TO-92 Mechanical Data_

fet n BS170

Contextual Info: WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET ABSOLUTE MAXIMUM RATINGS FEATURES • ■ ■ TC = +25°C unless otherwise specified Reliable, low cost, plastic package European TO-92 pin-out Low capacitance Drain-Source Voltage. 60V

BS170

Contextual Info: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68 G 2.42 2.67 H

pin diagram of bs170

Abstract: BS170
Contextual Info: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B · · Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68

BS170A

Contextual Info: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — C Mechanical Data ·

equivalent of BS170

Abstract: pin diagram of bs170 BS170
Contextual Info: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A TO-92 B C Mechanical Data • • • • Case: TO-92, Plastic

bs170 TO-92

Contextual Info: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7

pin diagram of bs170

Abstract: bs170 TO-92 TO 92 BS170
Contextual Info: TELEDYNE COMPONENTS ôcil7bOE 00077^^ 5 • TSC 3bE D T -S 5 -2 .5 WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET FEATURES ABSOLUTE MAXIMUM RATINGS ■ ■ ■ Reliable,low cost, plastic package European TO -92 pin-out Low capacitance

BS170

Contextual Info: BS170 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Mechanical Data Case: TO-92, Plastic

BS170 application note

Abstract: BS170 BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 pin diagram of bs170 bs170 TO-92
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk

BS170

Abstract: BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 bs170 TO-92
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk

BS170G

Abstract: BS170 BS170RLRAG mosfet bs170
Contextual Info: BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • This is a Pb−Free Device* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)

Contextual Info: BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • This is a Pb−Free Device* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)

BS170

Abstract: BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit VDS 60 Vdc VGS VGSM ±20 ±40 Vdc Vpk Drain Current Note 1. ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD

transistor BS170

Abstract: equivalent of BS170 TO 92 BS170 BS170 transistor MOSFET BS170 diode marking 226 BS170G BS170RL1 BS170RLRA BS170RLRAG
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40

AS5020-E

Abstract: AS5020 BS170
Contextual Info: AS5020-E AS5020 6-BIT ABSOLUTE ANGULAR POSITION ENCODER Extended Temperature Range DATA SHEET DATA SHEET General Description Key Features - Rotary absolute position measurement with 6-bit resolution 64 positions within full 360° degree rotation range Rotation speed of magnetic source up to 30,000 rpm

Contextual Info: AS5020-E 6-BIT ABSOLUTE ANGULAR POSITION ENCODER Extended Temperature Range Key Features - Rotary absolute position measurement with 6-bit resolution 64 positions within full 360° rotation range Rotation speed of magnetic source up to 30,000 rpm Digital output signal with Synchronous Serial Interface

AS5020-E

Abstract: Nec as50 AS5020 BS170
Contextual Info: AS5020-E 6-BIT ABSOLUTE ANGULAR POSITION ENCODER Extended Temperature Range Key Features - Rotary absolute position measurement with 6-bit resolution 64 positions within full 360° degree rotation range Rotation speed of magnetic source up to 30,000 rpm

Hall Effect Sensors

Abstract: AS5022-E BS170 Hall Effect Sensors daisy
Contextual Info: AS5022-E LOW SPEED 6-BIT ROTARY ENCODER Extended Temperature Range Key Features - Rotary absolute position measurement with 6-bit resolution 64 positions within full 360° rotation range Rotation speed of up to 60 rpm Digital output signal with Synchronous Serial Interface

Contextual Info: AS5020-E AS5020 6-BIT ABSOLUTE ANGULAR POSITION ENCODER Extended Temperature Range Key Features - Rotary absolute position measurement with 6-bit resolution 64 positions within full 360° degree rotation range Rotation speed of magnetic source up to 30,000 rpm

PCF793X

Abstract: H400X PCF793 HITAG 2 protocol 9352 339 00122 HITAG micro PROTOCOL transponders philips hitag free on HT 648 L hitag Security Transponder HITAG
Contextual Info: HT CM400 HITAG Core Module Hardware Product Specification Revision 2.0 November 1996 Core Module HT CM400 Rev.: 2.0 November 1996 Table of Contents 1. Introduction 5 2. System Overview 7 2.1. Transponders 2.2. Host 2.3. I/O - Functions 2.4. Connecting the Antenna

316 bcg

Abstract: 316 bcg MLX90316 mlx 161.02 marking code E5 SMD ic smd code Hall 256BEEPROM BS170 SMD HALL SENSOR SS 94 A2 MLX 90 360 MLX90316
Contextual Info: MLX90316 Rotary Position Sensor IC Features and Benefits Absolute Rotary Position Sensor IC Simple & Robust Magnetic Design Tria⊗is Hall Technology Programmable Angular Range up to 360 Degrees Programmable Linear Transfer Characteristic Selectable Analog Ratiometric , PWM, Serial Protocol

316 bcg

Abstract: 316 bcg MLX90316 SPI6 mlx 161.02 10k potentiometer, through hole, rotation 270 deg smd diode bcg marking code E5 SMD ic angle position sensors data sheet mlx smd marking KD MLX90316
Contextual Info: MLX90316 Rotary Position Sensor IC Features and Benefits Absolute Rotary Position Sensor IC Simple & Robust Magnetic Design Tria⊗is Hall Technology Programmable Angular Range up to 360 Degrees Programmable Linear Transfer Characteristic Selectable Analog Ratiometric , PWM, Serial Protocol