PIN DIODES 10GHZ Search Results

Contextual Info: m G E C PLESSEY CT3551-1.2 PIN DIODES - INTRODUCTION IN TR O D U C TIO N PIN diodes are devices whose impedance to high frequency signals can be controlled by a d.c. or low frequency bias signal. They can be supplied as unencapsulated chips or in a wide variety of packages suitable for applications from less

Contextual Info: MA4AGP907 MA4AGFCP910 M/A-COM Products AlGaAs Flip Chip PIN Diodes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V3 RoHS Compliant Chip Dimensions MA4GP907 and MA4GFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency

MA4GFCP910

Abstract: PIN diodes 10GHZ
Contextual Info: MA4AGP907 MA4AGFCP910 M/A-COM Products AlGaAs Flip Chip PIN Diodes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V3 RoHS Compliant Chip Dimensions MA4AGP907 and MA4GFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency

MA4AGFCP910

Abstract: MA4AGP907 MA4AGSBP907 MADP
Contextual Info: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed

madp pin diode

Contextual Info: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 RoHS Compliant Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency

MA4AGFCP910

Abstract: MA4AGP907 MA4AGSBP907
Contextual Info: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL

Contextual Info: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL

diode ph-150

Abstract: ph-30 diode LM 3140 diode ph-30 LM 3141
Contextual Info: What H E W L E T T mLfiM P A C K A R D Hermetic PIN Diodes for Stripline/M icrostrip Sw itches/ A ttenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz

SN62 PB36 ag2

Abstract: MA4BN1840-1
Contextual Info: MA4BN1840-1 V2 Monolithic HMIC Integrated Bias Network 18 – 40 GHz Chip Layout Features • • • • • Broad Bandwidth Specified from 18 to 40 GHz Useable from 10GHz to 50GHz Extremely Low Insertion Loss. High RF-DC Isolation Rugged, Fully Monolithic, Glass Encapsulated

Contextual Info: MA4BN1840-1 Monolithic HMIC Integrated Bias Network M/A-COM Products Rev. V3 RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified 18 to 40GHz Usable 10GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation

Contextual Info: MA4BN1840-1 Monolithic HMIC Integrated Bias Network M/A-COM Products Rev. V3 RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified 18 to 40GHz Usable 10GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation

ultrasonic proximity detector

Abstract: ultrasonic proximity detector circuit MA4BN1840-1
Contextual Info: MA4BN1840-1 Monolithic HMIC Integrated Bias Network RoHS Compliant Rev. V3 Features ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified 18 to 40GHz Usable 10GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation

MA4BN1840-1

Contextual Info: MA4BN1840-1 Monolithic HMIC Integrated Bias Network Rev. V3 Features •      Broad Bandwidth Specified 18 to 40GHz Usable 10GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation

Contextual Info: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Operating Temperature Features • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz

hitachi mosfet power amplifier audio application

Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
Contextual Info: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners

Coaxial Switches

Abstract: CCR-39S
Contextual Info: Series CCR-39S COAX SWITCHES Multi-Throw DC-10 GHz, SP9T & SP10T Latching Coaxial Switch PART NUMBER DESCRIPTION CCR-39S Commercial Latching Multi-throw, DC-10GHz The CCR-39Sis a broadband, multi-throw, electromechanical coaxial switch designed to switch a

Latching

Abstract: Switches Coaxial Switches
Contextual Info: Series CCT-39S COAX SWITCHES Multi-Throw DC-10 GHz, SP9T & SP10T Latching Coaxial Switch, Internal 50Ω Termination PART NUMBER DESCRIPTION CCT-39S Commercial Latching Multi-throw, DC-10GHz The CCT-39S is a broadband, multi-throw, electromechanical coaxial switch designed to switch a

cdma Booster schematic

Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
Contextual Info: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….

LTC6409UDB

Abstract: LTC6409IUDB LTC6409 LTC6409CUDB#TRMPBF LTC6409HUDB 1043D LTC6409CUDB LTC2262-14 LTC6409C LTC6409H
Contextual Info: LTC6409 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver Description Features 10GHz Gain-Bandwidth Product n 88dB SFDR at 100MHz, 2V P-P n 1.1nV/√Hz Input Noise Density n Input Range Includes Ground n External Resistors Set Gain Min 1V/V n 3300V/µs Differential Slew Rate

LTC6409IUDB

Abstract: LTC6409 LTC2262-14 LTC6409C LTC6409CUDB LTC6409H LTC6409HUDB Marking C4 LTC6409UDB
Contextual Info: LTC6409 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver Description Features 10GHz Gain-Bandwidth Product n 88dB SFDR at 100MHz, 2V P-P n 1.1nV/√Hz Input Noise Density n Input Range Includes Ground n External Resistors Set Gain Min 1V/V n 3300V/µs Differential Slew Rate

6409f

Abstract: LTM9011-14 LTC6409
Contextual Info: LTC6409 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver DESCRIPTION FEATURES n n n n n n n n n n n n 10GHz Gain-Bandwidth Product 88dB SFDR at 100MHz, 2VP-P 1.1nV/√Hz Input Noise Density Input Range Includes Ground External Resistors Set Gain Min 1V/V

ku-band pll lnb

Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)

MESFET Application

Abstract: hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A
Contextual Info: C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION:

ISDB-t modulator

Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)