PIN DIODES RADIATION DETECTOR Search Results

pin diodes radiation detector

Abstract: pin diode gamma detector neutron detector radiation detector pin diodes nuclear radiation detector GAMMA Radiation Detector nuclear radiation detector AN2011-01 UM9441
Contextual Info: SPD9441 Radiation Detector PIN Diode AN2011-01 Introduction SPD9441 Radiation Detector PIN Diodes are high efficiency detectors of nuclear and electromagnetic radiation including gamma radiation, electron radiation and x-rays. Utilizing a high reliability construction method, the SPD9441

3/Semiconductor gamma Radiation Detector

Abstract: pin diodes nuclear radiation detector nuclear radiation level sensor GAMMA Radiation Detector
Contextual Info: RD2014 - Nuclear Radiation Sensor - Detects Beta and Gamma Radiation and X-Rays Description The function of the RD2014 radiation sensor is based on an array of customized PIN diodes. The integrated pulse discriminator with a temperature compensated threshold level

BPW50

Abstract: BPW50C fast photo diode diode 725 bpw 50 Photo Detectors BPW41D pin photo diodes bpw41 BPW41C
Contextual Info: BPW SERIES SILICON PIN PHOTO DIODES A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection of wavelengths less than 700nm . The devices have low junction capacitance and thus are capable

photodiode BPW50

Abstract: BPW50 bpw41 Photo Detectors ZM100 diode 725 bpw filter BPW41D BPW41C BPW50C
Contextual Info: BPW SERIES SILICON PIN PHOTO DIODES A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection of wavelengths less than 700nm. The devices have low junction capacitance and thus are capable

Photo Detectors

Abstract: diode 725 BPW50
Contextual Info: BPW SERIES SILICON PIN PHOTO DIODES A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, w ith high rejection of wavelengths less than 7 0 0 nm. The devices have low junction capacitance and thus are capable

CQY78

Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
Contextual Info: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Phototransistor bp 101

Abstract: pin photodiode remote control bpy BPY61 rel photoelectric conversion Plastic Encapsulate Diodes phototransistor sensitive to red light silicon metal casing diode BPX62 transistor mm glass lens phototransistor
Contextual Info: Silicon Photovoltaic Cells, Silicon Photodiodes and Phototransistors Appnote 16 Optoelectronic components are increasingly used in modern electronics. The main fields of application are light barriers for production control and safety devices, light control and regulating equipment like twilight switches, fire detectors and facilities

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

pin diodes radiation detector

Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector DIODE ga101 Semiconductor Radiation Detector radiation ionizing dose TID detector pin diodes nuclear radiation detector 1N829A 2N2369 2N3032
Contextual Info: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to

micronote 103

Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector GA102 DIODE ga101 UM9441 radiation ionizing dose TID detector Semiconductor Radiation Detector high sensitive neutron PIN diode pin diode gamma detector
Contextual Info: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to

2N2369 avalanche

Abstract: Microsemi micronote series 050 Semiconductor Nuclear Radiation Detector DIODE ga101 pin diodes radiation detector UM9441 Microsemi Generic Diode nuclear radiation detector diode GA100 radiation ionizing dose TID detector
Contextual Info: Spring 1998 MicroNote Series 050 by Kent Walters, Microsemi Scottsdale Radiation Hardened Performance of Discrete Semiconductors Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military

pin diodes radiation detector

Abstract: 18E DBM 125HFBD 125LFBD 175HFBD 175LFBD 225HFBD 225LFBD 275HFBD 275LFBD
Contextual Info: CUSTOM COMPONENTS •'rWk ~3I 1ÖE D INC ■ 257Ö555 OGOQOLfl 3 ■ DETECTOR DIODES r/mws=iam i M"i I % GERMANIUM FEATURES: • • • • • • • Part Number 'p luA Range pF RV VF2 RS CT VR1 (Max.) MV (Typ.) MV (Typ.) Q(Typ.) a (Typ.) K3 mV/mW TSS4

S288P

Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Contextual Info: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of

CQY78

Abstract: cqy77 SF-104 equivalent transistor BPW33 solar cell transistor infrared phototransistor application lux meter photoelectric infra red sensor pair CQY78 IV Infrared phototransistor TO18 phototransistor sensitive to green light
Contextual Info: General IR and Photodetector Information Appnote 37 are separated and a photocurrent flows through an external circuit, also without an additional voltage photovoltaic effect . Carriers occurring in the space charge region are immediately sucked off due to the field prevailing in this layer. The

Physics and Technology

Abstract: physics pn junction diode structure
Contextual Info: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors

uv phototransistor

Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200

BPW21R

Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
Contextual Info: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al

UM9441 UM9442

Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Contextual Info: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of

UM9442

Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Contextual Info: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of

MSK119

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 119RH RAD HARD HIGH PERFORMANCE DUAL COMPARATOR 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Manufactured using Space Qualified RH119 Die MIL-PRF-38535 Class V Processing & Screening Total Dose Tested to TBD Krads(Si) (Method 1019.7 Condition A)

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 119RH RAD HARD HIGH PERFORMANCE DUAL COMPARATOR 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Manufactured using Space Qualified RH119 Die MIL-PRF-38535 Class V Processing & Screening Total Dose Tested to TBD Krads(Si) (Method 1019.7 Condition A)

TSOP1738 working

Abstract: u2506b how to test TSOP1738 sensor IR TSOP1738 remote control FOR HOME APPLIANCES Infrared sensor TSOP 1738 u1a 4093 TSOP1738 PIN CONFIGURATION working of TSOP1738 TSOP1738 device automatic fan control with tsop1738
Contextual Info: TSOP1x IR Detector Photomodules TELEFUNKEN Semiconductors 08.97 Table of Contents General Information. 3 Introduction . 3