PIN PHOTODIODE 10 GHZ Search Results

10458D

Contextual Info: 10458D 10 GHz High Power PIN Photodiode Receiver DATASHEET | NOVEMBER 2013 MICROWAVE The 10458 PIN microwave photodiode receiver incorporates a high-speed planar PIN photodiode with low-noise bias and monitor electronics. The unit installs in EMCORE’s System 10000 3 RU equipment rack providing a highly reliable, high power photodiode

Contextual Info: 10 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 low bias voltage, low dark current 1 up to 10 Gbps speed 1 e.g. for GbE, fiber channel data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip temperature = 25°C unless otherwise stated PARAMETER

G10208

Contextual Info: Devlp. PHOTODIODE For LRM InGaAs PIN photodiode with preamp G10208-14/-54 ROSA type, 1.31 µm, 10 Gbps Features Applications l 10 gigabit ethernet 10 GBASE-LRM multimode optical fibers and compatible with 10 Gbps l Optical fiber communications data rates

GaAs photodiode Emcore

Contextual Info: PRODUCT BRIEF | FEBRUARY 10, 2003 1x12 GaAs PIN Photodiode Array, 8485-1006 Features Data rates of 2.5 Gb/s per channel EMCORE’s 12 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

luminent

Abstract: InGaAs photodiode 1310 1550 InGaas PIN photodiode chip
Contextual Info: InGaAs 10 Gigabit PIN Photodiode Chip R-SP-0004-V2 Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast response • Operates at –40 to +85ºC • Active diameter is 20µm Applications • 10 Gigabit Optical Receiver

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447 series ROSA type, 850 nm, 10 Gbps Features G10447-14 G10447-54 Applications l φ1.25 mm sleeve type ROSA Receiver Optical l 10 gigabit ethernet Sub-Assembly l Optical fiber communications l High-speed response: 10 Gbps

photodiode ber 10-9

Abstract: G10447-51 G10447-54 KGPD1019E02 SE-171 LC pin rosa 10
Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G9911-14/-54 ROSA type, 1.3/1.55 µm, 10 Gbps Features Applications l Compatible with 10 Gbps Miniature Device XMD-MSA l High-speed response: 10 Gbps l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output

6601 D

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G9911-14/-54 ROSA type, 1.3/1.55 µm, 10 Gbps Features Applications l Compatible with 10 Gbps Miniature Device XMD l High-speed response: 10 Gbps l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output

G990

Contextual Info: PHOTODIODE GaAs PIN photodiode array G9905 series Chip of photodiode array for data communication Features Mounting example Applications l High-speed response: 10 Gbps/element l Low supply voltage: VR=2 V l Low dark current, Low terminal capacitance l Active area: φ0.06 mm

G10447-51

Abstract: G10447-54 SE-171
Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm G10447-54 / φ2.5 mm (G10447-51) sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

Contextual Info: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)

Photodiode-Array

Abstract: G8921-01 KGPD1009E02 SE-171
Contextual Info: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 G10447-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

photodiode 1 Gbps 1.55

Abstract: G9393-14 photodiode 1.0 Gbps 1.55 KIRD1069E02 SE-171 50 um photodiode pin photodiode 10 gbps
Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G9393-14 ROSA type, 1.3/1.55 µm, 10 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V l Differential output

G9284-14

Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G9284-14 ROSA type, 1.3/1.55 µm, 10 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V l Differential output

Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G10342-14/-54 ROSA type, 1.3/1.55 µm, 10 Gbps Features Applications l Compatible with 10 Gbps Miniature Device XMD-MSA l High-speed response: 11.3 Gbps l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output

1BW 58

Abstract: G10342-14 G10342-54 SE-171
Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G10342-14/-54 ROSA type, 1.3/1.55 µm, 10 Gbps Features Applications l Compatible with 10 Gbps Miniature Device XMD-MSA l High-speed response: 11.3 Gbps l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output

Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G10342-54 ROSA type, 1.3/1.55 µm, 10 Gbps Features Applications l Compatible with 10 Gbps Miniature Device XMD-MSA l High-speed response: 11.1 Gbps l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output

509-TO

Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G10342-14/-54 ROSA type, 1.3/1.55 µm, 10 Gbps Features Applications l Compatible with 10 Gbps Miniature Device XMD-MSA l High-speed response: 11.3 Gbps l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output

um 741

Abstract: G10342-54 KIRD1106E06 SE-171
Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G10342-54 ROSA type, 1.3/1.55 µm, 10 Gbps Features Applications l Compatible with 10 Gbps Miniature Device XMD-MSA l High-speed response: 11.1 Gbps l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9287-14 ROSA type, 850 nm, 10 Gbps Features Applications l SDH/SONET l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l Optical fiber communications l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V