PIN PHOTODIODE 10 NM Search Results

quadrant photodiode

Abstract: photodiode array encoder photodiode encoder KMPD1054E01 S8594 SE-171 spot light size photodiode PIN photodiode chip GaP photodiode
Contextual Info: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm

GaP photodiode

Abstract: quadrant photodiode
Contextual Info: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm

10458D

Contextual Info: 10458D 10 GHz High Power PIN Photodiode Receiver DATASHEET | NOVEMBER 2013 MICROWAVE The 10458 PIN microwave photodiode receiver incorporates a high-speed planar PIN photodiode with low-noise bias and monitor electronics. The unit installs in EMCORE’s System 10000 3 RU equipment rack providing a highly reliable, high power photodiode

PIN photodiode 500 nm

Abstract: GFD1300-550 Photodiode Honeywell DBM 01 ACTIVE LOAD PHOTODIODE photodiode esd sensitivity pin Photodiode 1300 nm
Contextual Info: GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION The GFD1300-550 is an InGaAs photodiode with

Contextual Info: 10 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 low bias voltage, low dark current 1 up to 10 Gbps speed 1 e.g. for GbE, fiber channel data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip temperature = 25°C unless otherwise stated PARAMETER

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

luminent

Abstract: InGaAs photodiode 1310 1550 InGaas PIN photodiode chip
Contextual Info: InGaAs 10 Gigabit PIN Photodiode Chip R-SP-0004-V2 Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast response • Operates at –40 to +85ºC • Active diameter is 20µm Applications • 10 Gigabit Optical Receiver

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447 series ROSA type, 850 nm, 10 Gbps Features G10447-14 G10447-54 Applications l φ1.25 mm sleeve type ROSA Receiver Optical l 10 gigabit ethernet Sub-Assembly l Optical fiber communications l High-speed response: 10 Gbps

photodiode ber 10-9

Abstract: G10447-51 G10447-54 KGPD1019E02 SE-171 LC pin rosa 10
Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

6601 D

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

Contextual Info: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz

far uv photodiode

Abstract: S1722-02 S1723-05 SE-171 radiation detector LARGE SURFACE AREA PHOTODIODE s1722
Contextual Info: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz

far uv photodiode

Abstract: B91 photo Transistor B91 photo diode S1722 S1722-02 S1723-05 SE-171 Si photodiode, united detector s172202 Radiation Detector
Contextual Info: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz

G10447-51

Abstract: G10447-54 SE-171
Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm G10447-54 / φ2.5 mm (G10447-51) sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

pin Photodiode 1300 nm

Abstract: PIN photodiode 500 nm photodiode esd sensitivity GFD1300-550 pin photodiode InGaAs sensitivity InGaas PIN photodiode Photodiode photodiode amplifier PIN photodiode 300 nm photodiode PIN 1300
Contextual Info: 02 February 1998 GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION

Contextual Info: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area l Laser beam axis alignment l Level meters l Pointing devices, etc. S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm

S5870

Abstract: S5980 S5981 KMPDA0036EB
Contextual Info: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area l Laser beam axis alignment l Level meters l Pointing devices, etc. S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm

Contextual Info: G FD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/pW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10°C to +65°C OUTLINE DIMENSIONS in inches mm

Contextual Info: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area l Laser beam axis alignment l Level meters l Pointing devices, etc. S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9287-14 ROSA type, 850 nm, 10 Gbps Features Applications l SDH/SONET l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l Optical fiber communications l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V

GaAs photodiode Emcore

Contextual Info: PRODUCT BRIEF | FEBRUARY 10, 2003 1x12 GaAs PIN Photodiode Array, 8485-1006 Features Data rates of 2.5 Gb/s per channel EMCORE’s 12 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own

S5870

Abstract: S5980 S5981
Contextual Info: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm l Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow

Contextual Info: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm l Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow

Contextual Info: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm l Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow