PIN PHOTODIODE 20 GHZ Search Results

sensitivity dB photodiode pin

Abstract: C4890 S5791 pin photodiode 10 ghz rise time avalanche photodiode
Contextual Info: PHOTODIODE PIN photodiode amplifier C4890 Wide bandwidth amplifier 1.5 GHz, 20 dB C4890 wide-band amplifier, when connected to a high-speed PIN photodiode (S5791, S5972, S5973, etc.) converts optical signals at a maximum of 1.5 GHz into voltage outputs with exceptionally low distortion and 20 dB gain.

10458E

Contextual Info: 10458E 20 GHz High Power PIN Photodiode Receiver DATASHEET | NOVEMBER 2013 MICROWAVE The 10458 PIN microwave photodiode receiver incorporates a high-speed planar PIN photodiode with low-noise bias and monitor electronics. The unit installs in EMCORE’s System 10000 3 RU equipment rack providing a highly reliable, high power photodiode

S5973

Abstract: pin photodiode 10 ghz photodiode amplifier S5791 C4890 pin photodiode 20 ghz S5972 SE-171 PIN photodiode ps rise time avalanche photodiode
Contextual Info: PHOTODIODE PIN photodiode amplifier C4890 Wide bandwidth amplifier 1.5 GHz, 20 dB C4890 wide-band amplifier, when connected to a high-speed PIN photodiode (S5791, S5972, S5973, etc.) converts optical signals at a maximum of 1.5 GHz into voltage outputs with exceptionally low distortion and 20 dB gain.

PDC4310

Contextual Info: H InGaAs/InP FC-Connectorized High Speed Photodiode with Fiber Optic Pigtail Assembly Technical Data PDC4310 Features Description • 20 GHz Bandwidth • 1100-1650 nm Optical Sensitivity The PDC4310 high speed connectorized PIN photodiode is a state of the art optical detector

photodiode eyes response application

Abstract: 10G PIN photodiode R-11-020-C photodiode eyes response
Contextual Info: InGaAs 10G PIN Photodiode Chip R-11-020-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast response • Operate at -40 to 85ºC • Active diameter is 20µm • 10G Optical receiver application

10G PIN photodiode

Abstract: LuminentOIC
Contextual Info: InGaAs 10G PIN Photodiode Chip R-11-020-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast response • Operate at -40 to 85ºC • Active diameter is 20µm • 10G Optical receiver application

luminent

Abstract: InGaAs photodiode 1310 1550 InGaas PIN photodiode chip
Contextual Info: InGaAs 10 Gigabit PIN Photodiode Chip R-SP-0004-V2 Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast response • Operates at –40 to +85ºC • Active diameter is 20µm Applications • 10 Gigabit Optical Receiver

Contextual Info: Whpt H EW LET T mLfim P A C K A R D InGaAs/InP High Speed Photodiode Technical Data PDC4304 Features Description • 20 GHz Bandwidth The PDC4304 high speed PIN photodiode is a state of the art optical detector manufactured using our proven, high reliability

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9846-14 ROSA type, 850 nm, 2.5 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 2.5 Gbps l High gain with AGC (Auto Gain Control): 0.9 V/mW (at -20 dBm)

D739A

Abstract: PD739A13
Contextual Info: MITSUBIS]HI ELECTR] C CORPORATION * DATE: SPECIFICATION -SHEET July 20,’00 PREPARED BY: S.Funaba CHECKED BY: S.Minamihara Y.Tanaka APPROVED BY: A.Takemoto 1. TYPE : PD739A13 2. APPLICATOIN : OPTICAL COMMUNICATION 3. STRUCTURE : <>20 \im InGaAs PIN PHOTODIODE with PRE-AMPLIFIER

PIN photodiode 850nm

Abstract: fast photodiode amplifier transimpedance amplifier 7.5 GHz PIN photodiode 850 nm ir photodiode amplifier photodiode amplifier 7.5 ghz pin Photodiode 2 GHz PIN photodiode A/W 850nm PIN photodiode ps MXP3000
Contextual Info: MXP3000 Series GaAs PIN Photodiode Chips OPTO ELECTRONIC PRODUCTS P RODUCT P REVIEW DESCRIPTION The five devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 1.4 GHz active area of 250 mm2 ,

PIN photodiode 850nm

Abstract: PIN photodiode chip 850nm photodiode 850nm fast photodiode amplifier PIN photodiode 850 nm PIN photodiode ps MXP3004 photodiode pin 850nm pin Photodiode 2 GHz pin photodiode 20 ghz
Contextual Info: MXP3000 Series GaAs PIN Photodiode Chips OPTO ELECTRONIC PRODUCTS P RODUCT P REVIEW DESCRIPTION The five devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 1.4 GHz active area of 250 mm2 ,

Lucent Technologies fiber optics cable

Abstract: 4510A microwave receiver 10456B 4510B D 4515 flange RF resistor 50 Lucent receiver pin photodiode 10 ghz 10458A
Contextual Info: Data Sheet August 2000 Microwave Photodiode Receivers Features • Wide-band analog signal reception ■ Single-mode fiber pigtail ■ High optical return loss ■ Up to 20 GHz bandwidth ■ 1310 nm and 1550 nm sensitivity Applications ■ Antenna remoting

2518A

Abstract: photodiode receiver 4510A 4518A D 4515 PIN photodiode 1310 pin photodiode 10 ghz pin photodiode 20 ghz 4510A agere
Contextual Info: Data Sheet June 2001 Wideband Photodiode Receivers Features • Wide-band analog signal reception ■ Single-mode fiber pigtail ■ High optical return loss ■ Up to 20 GHz bandwidth ■ 1310 nm and 1550 nm sensitivity Applications ■ Antenna remoting ■

MBC-1000

Abstract: MXPE-LN Niobate bias controller modulator optic
Contextual Info: MXAN-LN-20 6/06/07 12:37 Page 1 MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators us About Features Photline Technologies is a provider of lithium niobate based modulation solutions. The primary market served by the company are : optical telecommunications defense and aerospace - sensing and measurement equipments - research

MXPE-LN

Abstract: MXAN-LN-20 lithium niobate 40
Contextual Info: 10:18 Page 1 MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators us Features Photline Technologies is a provider of lithium niobate based modulation solutions. The primary market served by the company are : optical telecommunications defense and aerospace - sensing and measurement equipments - research

MXPE-LN

Abstract: MXPE-LN-10 MBC-1000
Contextual Info: MXPE-LN 6/06/07 12:42 Page 1 MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators Ordering MXPE-LN-BW-XX-Y-Z-AB-CD us About BW : 10 bandwidth >10 GHz XX : 00 no photodiode; PD internal monitoring photodiode Y : input fiber : P polarisation maintaining; S standard single mode

MXPE-LN

Abstract: MXPE-LN-10
Contextual Info: MXPE-LN 6/06/07 12:42 Page 1 MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators Ordering MXPE-LN-BW-XX-Y-Z-AB-CD us About BW : 10 bandwidth >10 GHz XX : 00 no photodiode; PD internal monitoring photodiode Y : input fiber : P polarisation maintaining; S standard single mode

MXPE-LN

Contextual Info: MXAN-LN-20 6/06/07 12:37 Page 1 MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators us About Features Photline Technologies is a provider of lithium niobate based modulation solutions. The primary market served by the company are : optical telecommunications defense and aerospace - sensing and measurement equipments - research

MXPE-LN

Contextual Info: MXPE-LN 6/06/07 12:42 Page 1 MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators Ordering MXPE-LN series Very High Extinction Ratio Lithium Niobate Intensity Modulators MXPE-LN-BW-XX-Y-Z-AB-CD us About BW : 10 bandwidth >10 GHz

Contextual Info: MX-LN10 6/06/07 11:55 Page 1 MX-LN-10/20 Lithium Niobate 10 & 20 Gb/s Intensity Modulators Ordering information MX-LN-BW-XX-Y-Z-AB-CD BW : 10 bandwidth ≥12 GHz ; 20 bandwidth ≥18 GHz XX : 00 no photodiode; PD internal monitoring photodiode Y : input fiber : P polarisation maintening; S standard single mode

MXPE-LN

Contextual Info: MXPE-LN 3/06/05 10:36 Page 1 MXPE-LN series Very High Extinction Ratio Lithium Niobate Intensity Modulators MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators 1010011001 Ordering information MXPE-LN-W-XX-Y-Z-AB-CD W : 10 bandwidth >10 GHz

Contextual Info: ONET8551T www.ti.com SLLSEI5 – OCTOBER 2013 11.3-Gbps Limiting Transimpedance Amplifier With RSSI Check for Samples: ONET8551T FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • • 9-GHz Bandwidth 10-kΩ Differential Small Signal

Contextual Info: ONET8551T www.ti.com SLLSEI5 – OCTOBER 2013 11.3-Gbps Limiting Transimpedance Amplifier With RSSI Check for Samples: ONET8551T FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • • 9-GHz Bandwidth 10-kΩ Differential Small Signal