PIN PHOTODIODE 300 NM Search Results

InGaas PIN photodiode, 1550

Abstract: InGaAs photodiode 1310 1550 PIN Photodiode 4 Ghz 1550 nm PHOTODIODE PD 20
Contextual Info: InGaAs PIN Photodiode Modules R-11-300-R/R-xxx Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case

Contextual Info: ËO SIDELOOKER PIN PHOTODIODE OPTOELECTRONICS QSE773 The QSE773 is a silicon PIN photodiode encapsulated in an infrared transparent, black, plastic sidelooker package. -.108 2.75 - ±.008 .207 (5.26)— ±.008 K .300 (7.62) ±.012 .118(3.00)±.008 .610(15.48)

PIN Photodiode 1550nm

Abstract: PIN photodiode 1310 1310nm photodiode 1550nm photodiode 3,8 Ghz PIN photodiode responsivity 1550nm 2,5 GHz InGaAs Photodiode 1550nm
Contextual Info: InGaAs PIN Photodiode Modules R-11-300-X-XXX-XX Features • InGaAs/InP PIN Photodiode • High responsivity at 1310nm and 1550nm • Low dark current • Fast pulse response • -40~85ºC operating temperature • Hermetically sealed 3-pin metal case Packaging

InGaas PIN photodiode chip

Contextual Info: InGaAs PIN Photodiode Chip R-11-300-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Operate at -40 to 85ºC • Active diameter is 280µm • Monitor PD application Absolute Maximum Rating Tc=25ºC

InGaas PIN photodiode chip

Contextual Info: InGaAs PIN Photodiode Chip R-11-300-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Operate at -40 to 85ºC • Active diameter is 280µm • Monitor PD application Absolute Maximum Rating Tc=25ºC

Contextual Info: InGaAs PIN Photodiode R-11-XXX-G-B B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm

Photodiode 1310

Abstract: InGaAs photodiode TO-46 R-11-055-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B 10 gb laser photodiode TO46 package R1105
Contextual Info: InGaAs PIN Photodiode R-11-xxx-G-B B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 55, 75,100 or 300 µm

Contextual Info: InGaAs PIN Photodiode R-11-XXX-G-A B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm

PT511-2

Contextual Info: PT511-2 TECHNICAL DATA TO-Can PIN Photodiode PT511-2 is an InGaAs pin structure based photodiode on InP by MOCVD method and planar diffusing technology. The sensitive area is Ø 300µm respectively. TO-46 package with flat glass lens. Absolute Maximum Ratings

Contextual Info: InGaAs PIN Photodiode R-11-XXX-G-B B -C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm

PT511B

Contextual Info: PT511B TECHNICAL DATA TO-Can PIN Photodiode Ball Lens PT511B is an InGaAs pin structure based photodiode on InP by MOCVD method and planar diffusing technology. The sensitive area is Ø 300µm respectively. TO-46 package with ball lens. Absolute Maximum Ratings Ta=25°C

PT521

Contextual Info: PT521 TECHNICAL DATA TO-Can PIN Photodiode Flat Window PT521 is an InGaAs pin structure based photodiode on InP by MOCVD method and planar diffusing technology. The sensitive area is Ø 300µm respectively. TO-46 package with flat window. Absolute Maximum Ratings Ta=25°C

mid ir photodiode

Abstract: MID-56419
Contextual Info: T-1 3/4 PACKAGE PIN PHOTODIODE MID-56419 Package Dimensions Description The MID-56419 is a photodiode mounted in water clear Unit: mm inches end look plastic package and suitable for the variety ψ5.05 (.200) wavelength. 5.47 (.215) 7.62 (.300) 5.90 (.230)

PIN photodiode 850nm

Abstract: PIN photodiode sensitivity 850nm 850nm MID-54H19
Contextual Info: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-54H19 Package Dimensions The MID-54H19 is a photodiode mounted in special Unit : mm inches dark end look plastic package and suitable for the ψ5.05 (.200) IRED (850nm/880nm) type. 5.47 (.215) 7.62 (.300)

Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

mid ir photodiode

Abstract: MID-54A19 940NM
Contextual Info: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-54A19 Package Dimensions The MID-54A19 is a photodiode mounted in special ψ5.05 .200 dark end look plastic package and suitable for the Unit: mm ( inches IRED (940nm) type. 5.47 (.215) 7.62 (.300) 5.90 (.230)

KPINA0024EA

Abstract: S3071 S3072 S3399 S3883 V424
Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

KPINA0024EA

Abstract: S3071 S3072 S3399 S3883
Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

S3071

Abstract: S3072 S3399 S3883 VR24
Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

FGA10

Abstract: THORLABS FGA10 InGaAs photodiode spectral response InGaAs photodiode photodiode bias circuit C1012 1800nm Thorlabs PHOTODIODE FGA10 photodiode InGaAs NEP
Contextual Info: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FGA10 InGaAs Photodiode High Speed The FGA10 is a high-speed InGaAs photodiode with a spectral response from 700nm to 1800nm. This photodiode has a PIN structure that provides fast rise and fall times with a bias of 5V.

KPINA0024EA

Abstract: S3071 S3072 S3399 S3883
Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

RLT65300T

Contextual Info: RLT65300T TECHNICAL DATA High Power Visible Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 650 nm Optical Ouput Power: 300 mW Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN 1 2 Bottom View

forward reverse schematic diagram

Abstract: R-11-055-G-B R-11-075-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B InGaAs photodiodes 1310 1550
Contextual Info: InGaAs PIN Photodiodes R-11-055-G-B • R-11-075-G-B/BB • R-11-100-G-B • R-11-300-G-B Features • InGaAs/ InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85˚C operating temperature