PIN PHOTODIODE 500 NM Search Results

S7329-01

Abstract: S7762 S8223 S8314
Contextual Info: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application.

S7836-01

Contextual Info: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application.

S8223

Abstract: laser diode 780 nm S8314 photodiode S3321-04 S7329-01 S7762 S7836 S8314 L-P-410
Contextual Info: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application.

RLT650-500-T

Contextual Info: RLT650-500-T TECHNICAL DATA High Power Visible Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 650 nm Optical Ouput Power: 500 mW Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN 1

RLT83500G

Contextual Info: RLT83500G TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 830 nm typ. Max. optical power: 500 mW, cw Emitting Aperture: 1x50 m² Package: 9 mm PIN CONNECTION: 1 Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode

s838

Abstract: S8223 S7329-01
Contextual Info: PREVIOUS DATA PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application. S8387 offers high sensitivity in the violet

laser diode 780 nm

Abstract: S8223 S7329-01 S8314 photodiode Laser Diode 780 IR-Laser-Diode s7836 S3321-04 S7762 S8314
Contextual Info: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application. S8387 offers high sensitivity in the violet

photodiode 110

Abstract: transistor 1BW G8336-02 S7861 S7861-02 S8334 S8334-02 G8336 GaAs photodiode
Contextual Info: PHOTODIODE Si/GaAs PIN photodiode with preamp S8334/S7861/G8336 series TO-18 package, 0.65/0.8 mm, 500 Mbps/1.25, 2.1 Gbps S8334/S7861/G8336 series are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity Si or GaAs PIN photodiode integrated with a high-speed preamp, allowing easy

fast photodiode amplifier

Abstract: si photodiode G8336 G8336-02 S7861 S7861-02 S8334 S8334-02 GaAs photodiode
Contextual Info: PHOTODIODE Si/GaAs PIN photodiode with preamp S8334/S7861/G8336 series TO-18 package, 0.65/0.8 mm, 500 Mbps/1.25, 2.1 Gbps S8334/S7861/G8336 series devices are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications.

Contextual Info: PHOTODIODE Si/GaAs PIN photodiode with preamp S8334/S7861/G8336 series TO-18 package, 0.65/0.8 mm, 500 Mbps/1.25, 2.1 Gbps S8334/S7861/G8336 series devices are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications.

PIN photodiode 500 nm

Abstract: silicon pin photodiode laser detection S6795 DVD Laser pickup optical pickup unit dvd laser green laser dvd optical pickup optical pickup laser pickup dvd S7747
Contextual Info: Si PIN PHOTODIODE S7747 6-element photodiode for violet laser detection FEATURES l Clear plastic molded package 454.8 mm l High sensitivity: 0.26 A/W Typ. (λ=410 nm) l High-speed response: 500 MHz Typ. (VR=5 V) APPLICATIONS l Violet to blue green laser detection

S05S05

Contextual Info: SIEMENS FC RECEPTACLE and FLANGE SRD0021 7H /0 Ternary PIN Photodiode Dimensions in inches mm SRD00217H 10 .020 (.50) r 0 .012 (.30) m c o /i m c c \ S R D 002170 096 (2.4) 080 (2.0) .524 (13.1) .500 (12.5) FEATURES InGaAs/lnP, PIN photodiode Designed for telecom applications

G8337

Abstract: S8221 S8335 S-8335
Contextual Info: PHOTODIODE Si/GaAs PIN photodiode with preamp S8335/S8221/G8337 series Receptacle type, 0.65/0.8 µm, 500 Mbps/1.25 • 2.1 Gbps S8335/S8221/G8337 series are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications. These devices

"Photo Diode"

Abstract: dual photodiode fiber optical photo detector optical amplifier PHOTODIODE 708 photodiode amplifier Pulse-Width-Modulation Control Circuit SMA Package PDB-708
Contextual Info: PHOTONIC DETECTORS INC. High Speed Detector Amplifier Hybrid Type PDB-708 PACKAGE DIMENSIONS INCH [mm] .205 [5.21] .162 [4.11] .500 [12.7] MIN PHOTODIODE CHIP 5 4 6 Ø.100 [Ø2.54] PIN CIRCLE Ø.184 [4.67] Ø.210 [5.33] Ø.155 [3.94] 3 1 PHOTODIODE OP-AMP

qe connector

Contextual Info: Non-Cooled Large Area DUV Silicon Avalanche Photodiode SD 630-70-75-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-75-500 is a windowless non-cooled

Contextual Info: Non-Cooled Large Area DUV Silicon Avalanche Photodiode SD 630-70-75-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-75-500 is a windowless non-cooled

Contextual Info: Non-Cooled Large Area UV Silicon Avalanche Photodiode SD 630-70-73-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-73-500 is a non-cooled large area UV

photodiode Avalanche photodiode

Abstract: avalanche photodiode bias APD, applications, bias supply Avalanche photodiode APD
Contextual Info: Non-Cooled Large Area Blue Silicon Avalanche Photodiode SD 630-70-74-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-74-500 is a non-cooled large area

photodiode Avalanche photodiode

Abstract: APD, applications, bias supply avalanche photodiode bias avalanche photodiode bias and high voltage avalanche photodiode Avalanche photodiode APD
Contextual Info: Non-Cooled Large Area Red Silicon Avalanche Photodiode SD 630-70-72-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-72-500 is a non-cooled large area

Contextual Info: Non-Cooled Large Area UV Silicon Avalanche Photodiode SD 630-70-73-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-73-500 is a non-cooled large area UV

"IR led Sensor"

Abstract: IR photodiode 880 nm ir proximity sensor nir leds PDI-G103 ir led 940 nm 1 w isolated voltage sensor 1mhz PIN photodiode 500 nm IR LED SENSOR
Contextual Info: PHOTONIC DETECTORS INC. GaAlAs 880 nm peak Photodiode Type PDI-G103 PACKAGE DIMENSIONS inch [mm] HEADER .210 [5.33] WINDOW CAP (WELDED) .155 [3.98] .100 [2.54] PIN CIRCLE CL .053 [1.35] 45° 3X Ø.018 [0.46] VIEWING ANGLE 65° .500 [12.70] Ø.185 [4.70]

quadrant photodiode

Contextual Info: «Of T0X9108 Large Area Silicon Quadrant PIN Photodiode Taxas Optoelectronics, Inc. DESCRIPTION FEATURES Quadrant Geometry For Alignment and Tracking Applications Diameter of Active Area, 0.650 Inch Rise and Fall Times, 10 ns Typ at 900 nm Wavelength Dark Current 500 nA Typ per Quadrant

RLT808500G

Contextual Info: RLT808500G TECHNICAL DATA High Power Infrared Laserdiode Structure: High Efficiency MOVCD Quantum Well Design Lasing wavelength: 808 nm typ. NOTE! Output power: 500 mW, cw LASERDIODE Package: 9 mm MUST BE COOLED! PIN CONNECTION: 1 Laser diode cathode 2) Laser diode anode and photodiode cathode

Contextual Info: PHOTONIC DETECTORS INC. GaAlAs 880 nm peak Photodiode Type PDI-G103L PACKAGE DIMENSIONS inch [mm] HEADER .210 [5.33] LENS CAP (WELDED) .155 [3.98] .100 [2.54] PIN CIRCLE CL .053 [1.35] 45° 3X Ø.018 [0.46] 40° VIEWING ANGLE .500 [12.70] Ø.185 [4.70] .150 [3.81]