PIN PHOTODIODE A/W 850NM Search Results

InGaas PIN photodiode, 1550 NEP

Abstract: quad photodiode psd quadrant photodiode InGaas PIN photodiode, 1550 sensitivity photodiode 850nm nep UDT Sensors Photodiode, 1550nm NEP InGaas PIN photodiode chip quad photodiode PIN photodiode 850nm
Contextual Info: InGaAs Quad Detectors 4 Quadrant Detectors for NIR Wavelengths The UDT InGaAs Quad series of Photodetectors allow position measurements of wavelengths from 850nm to 1700nm. The 4 Quadrant devices made of InGaAs come in 1mmφ InGaAs-1000-4 and 3mmφ (InGaAs-3000-4) sizes. They exhibit an excellent combination of High

AX65-R2F

Abstract: PIN photodiode sensitivity 850nm photodiode chip silicon
Contextual Info: CENTRONIC LTD 45E J> m s ia ? □□□□□at, Ultra High Speed Photodiodes 3 metui AX65-R2F The AX65-R2F is a high quality low cost silicon photodiode specially designed for fiber optic applications operating in the 850nm range. Frequency response of 100 MHz can be attained

MAX3266

Abstract: MAX3266CSA MAX3267 MAX3267CSA TO56 package TO-56 header
Contextual Info: 19-4796; Rev 1; 6/00 KIT ATION EVALU E L B AVAILA 1.25Gbps/2.5Gbps, +3V to +5.5V, Low-Noise Transimpedance Preamplifiers for LANs The 1.25Gbps MAX3266 has a typical optical dynamic range of -24dBm to 0dBm in a shortwave 850nm configuration or -27dBm to -3dBm in a longwave

Contextual Info: 19-4796; Rev 1; 6/00 KIT ATION EVALU E L B AVAILA 1.25Gbps/2.5Gbps, +3V to +5.5V, Low-Noise Transimpedance Preamplifiers for LANs The 1.25Gbps MAX3266 has a typical optical dynamic range of -24dBm to 0dBm in a shortwave 850nm configuration or -27dBm to -3dBm in a longwave

Contextual Info: CENTRONIC LTD 45E D m sia? 3 Ultra High Speed Photodiodes mczm t^ H S " AX65-R2F The AX65-R2F is a high quality low cost silicon photodiode specially designed for fiber optic applications operating in the 850nm range. Frequency response of 100 MHz can be attained

Contextual Info: LASER DIODE LC-5S-850D-SP LC-5S-850D-SP is 850nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. Lifetime expectancy exceeds 10000

PW13ST

Abstract: PIN photodiode 850nm PW85ST LED 1310 nm fiber coupled
Contextual Info: PD LD PW13ST WDM Multimode 1300nm Transmit/850nm Receive Bidirectional Modules Applications • • • • Video Transmission Short distance over MMF Full Duplex Communications WDM Bi-Directional transmission over a single fiber Features • • • • •

Contextual Info: 850nm MM 4.25 Gbps VCSEL LC TOSA November 2004 Preliminary Datasheet Features multi-mode •850nm, emission threshold •Low and operating currents w/ • Compatible 50/125 µm and 62.5/125µm MM fibers TO-56 • Hermetic package w/ LC plastic connector sleeve

PIN photodiode 850nm

Abstract: VX-TI11-4BP1 VCSEL lens photodiode high power 850nm ld PIN photodiode ps 4BP1 850nm VCSEL application
Contextual Info: 850nm VCSEL in To-46 Package 1. Feature: VCSEL/LD Division a. b. c. d. Ion-implant process Ball Lens Window Monitor Photodiode High speed ≥ 1.25Gbps 2. Application: a. b. c. e. High-speed data communications and telecommunications applications Gigabit Ethernet

high power 850nm ld

Abstract: VX-TI11-4FP1
Contextual Info: 850nm VCSEL in To-46 Package 1. Feature: VCSEL/LD Division a. b. c. d. Ion-implant process Flat window Monitor Photodiode High speed ≥ 1.25G 2. Application: a. b. c. e. High-speed data communications and telecommunications applications Gigabit Ethernet Fiber Channel

high power 850nm ld

Abstract: PIN photodiode ps VX-TO11-4BP1
Contextual Info: 850nm VCSEL in To-46 Package 1. Feature: VCSEL/LD Division a. b. c. d. Oxidation process Ball Lens Window Monitor Photodiode High speed ≥ 2.5Gbps 2. Application: a. b. c. e. High-speed data communications and telecommunications applications Gigabit Ethernet

VX-TO11-4FP1

Abstract: g50V high power 850nm ld
Contextual Info: 850nm VCSEL in To-46 Package 1. Feature: VCSEL/LD Division a. b. c. d. Oxidation process Flat window Monitor Photodiode High speed ≥2.5Gbps 2. Application: a. b. c. e. High-speed data communications and telecommunications applications Gigabit Ethernet Fiber Channel

VCSEL photodiode

Abstract: VX-TH11-4BP1 high power 850nm ld
Contextual Info: 850nm High Power VCSEL in To-46 Package 1. Feature: VCSEL/LD Division a. b. c. d. Ion-implant process Ball Lens Window Monitor Photodiode High speed ≥ 1.25Gbps 2. Application: a. b. c. e. High-speed data communications and telecommunications applications

VX-TH11-4FP1

Abstract: high power 850nm ld PIN photodiode 850nm
Contextual Info: 850nm High Power VCSEL in To-46 Package 1. Feature: VCSEL/LD Division a. b. c. d. Ion-implant process Flat window Monitor Photodiode High speed ≥ 1.25G 2. Application: a. b. c. e. High-speed data communications and telecommunications applications Gigabit Ethernet

Contextual Info: LDSF Series SILICON PINFET RECEIVER FEATURES: ►780nm to 850nm Operation ►Transimpedance Circuit ►Silicon PIN Detector ►High Sensitivity ►High Transimpedance ►Mil-Qual Packages Available DESCRIPTION: The LDSF pinfet is a series of fiber optic receiver modules used in high sensitivity, shortwavelength applications.

Contextual Info: LASER DIODE LC-50S-850C LC-50S-850C is 850nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-850C is a CW single transverse mode injection semiconductor laser with built-in monitor

850nm VCSEL application

Abstract: 850nm tosa LC TOSA 850nm APD TOSA process TO46 package 850nm integrated power monitor Picolight Tosa 850nm APD 850nm
Contextual Info: PL-SLx-00-SG0-Cx 850nm 4.25G VCSEL LC TOSA Features • Data Rates up to 4.25 Gbps • 3.3V Operation • Optimized for -40°C to 85°C Transceiver Applications • Optical Power Monitor with Excellent Tracking • Common Cathode, Common Anode, or Differential Drive VCSEL TO Package

Picolight vcsel

Contextual Info: PL-CxA-00-SG0-C0 850nm 4.25G VCSEL TO-46 The 850nm 4.25 Gbps packaged transmitter is designed for high-speed optical data communication applications. The product incorporates Picolight's patented high-speed, high reliability VCSEL, integrated with an active photomonitor in a TO-46 package. The Picolight transmitter is

10G TOSA

Abstract: 850 nm to-can VCSEL 10G PROCESS VCSEL 10g 850nm tosa
Contextual Info: PL-SxD-00-S40-Cx Features • Data Rates up to 10 Gbps • 3.3V Operation • -10°C to 85°C Operation • Optical Power Monitor with Excellent Tracking • Differential Drive with Isolated Case Configuration 850nm 10G TOSA The Picolight 850nm 10 Gbps connectorized TOSA

VCSEL 25G

Abstract: S20C0 PIN photodiode 850nm
Contextual Info: PL-Cxx-00-S20-C0 Features • Data Rates to 2.5 Gbps 850nm 2.5G VCSEL TO-46 The Picolight 850nm 2.5 Gbps optical transmitter is designed to fulfill the demanding requirements of highspeed data communication. The product consists of a high performance, high reliability VCSEL, integrated with

Contextual Info: PL-SLx-00-SG0-Cx 850nm 4.25G VCSEL LC TOSA Features • Data Rates up to 4.25 Gbps • 3.3V Operation • Optimized for -40°C to 85°C Transceiver Applications • Optical Power Monitor with Excellent Tracking • Common Cathode, Common Anode, or Differential Drive VCSEL TO Package

PL-SLC-00-S10-C0

Abstract: LC TOSA 1.25G 850NM S10C0
Contextual Info: PL-SLx-00-S10-Cx 850nm 1.25G VCSEL LC TOSA Features • Data Rates up to 1.25 Gbps • 3.3V Operation • Optimized for -40°C to 85°C Transceiver Applications • Optical Power Monitor with Excellent Tracking • Common Cathode or Common Anode VCSEL TO Package Aligned to a Plastic LC

Contextual Info: PL-SLx-00-S20-Cx 850nm 2.5G VCSEL LC TOSA Features • Data Rates up to 2.5 Gbps • 3.3V Operation • Optimized for -40°C to 85°C Transceiver Applications • Optical Power Monitor with Excellent Tracking • Common Cathode or Common Anode VCSEL TO Package Aligned to a Plastic LC

ic 747

Abstract: PIN photodiode 850nm dbm 10Gb PT1001-TO ic ca 747 OEpic pt1001 L1001-A PT1001-A
Contextual Info: PT1001-A 10 Gb/s, 850nm PIN-TIA March 2002 Advanced Product Specifications FEATURES • • • • • • • Integrated PIN photodetector with a Transimpedance Amplifier High Data Rate: 10 Gb/s Conversion Gain: 10nA Single +5 V power supply Low Power Consumption: 60mW