PIN PHOTODIODE INGAAS SENSITIVITY Search Results

G9906-01

Abstract: KIRD1075E02 SE-171 photodiode InGaAs NEP
Contextual Info: PHOTODIODE InGaAs PIN photodiode G9906-01 Small package InGaAs PIN photodiode for C-L band G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active area of φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules.

opto 2561

Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
Contextual Info: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging

Contextual Info: epitex Opto-Device & Custom LED PD1300-35D32-I Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35D32-I is InGaAs PIN-photodiode featuring excellent responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with

InGaas PIN photodiode, 1550 NEP

Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
Contextual Info: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging

G8370-01

Abstract: G8370 G8370-02 G8370-03 G8370-05
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

photodiode InGaAs NEP

Abstract: G8370 G8370-01 G8370-02 G8370-03 G8370-05
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

G8370-01

Abstract: G8370 G8370-02 G8370-03 G8370-05
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

G8370-01

Abstract: G8370 G8370-02 G8370-03 G8370-05
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

PD-1300

Abstract: ingaas LED
Contextual Info: epitex Opto-Device & Custom LED PD1300-35T00 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35T00 is InGaAs PIN-photodiode featuring excellent. responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with 0.35x0.35mm

Contextual Info: epitex Opto-Device & Custom LED Φ5 STEM TYPE stem type InGaAs PD Lead Pb Free Product RoHS compliant PD1300-35D52-I InGaAs PIN-PD PD1300-35D52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted

ingaas LED

Contextual Info: epitex Opto-Device & Custom LED PD1300-35D00-I Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35D00-I is InGaAs PIN-photodiode featuring excellent. responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with 0.35x0.35mm

Contextual Info: epitex Opto-Device & Custom LED PD1450-35T52 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1450-35T52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed

Contextual Info: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.

Contextual Info: epitex Opto-Device & Custom LED Φ5 STEM TYPE stem type InGaAs PD PRELIMINARY Lead Pb Free Product RoHS compliant PD1450-35D52-I InGaAs PIN-PD PD1450-35D52-I is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted

Contextual Info: epitex Opto-Device & Custom LED PD1300-35T52 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35T52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed

Contextual Info: epitex Opto-Device & Custom LED PD1300-35D52-I Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35D52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed

PD1450-35T32

Contextual Info: epitex Opto-Device & Custom LED PD1450-35T32 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1450-35T32 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed

PIN photodiode 500 nm

Abstract: GFD1300-550 Photodiode Honeywell DBM 01 ACTIVE LOAD PHOTODIODE photodiode esd sensitivity pin Photodiode 1300 nm
Contextual Info: GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION The GFD1300-550 is an InGaAs photodiode with

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8195 series Pigtail type, 1.3/1.55 µm, 2 GHz G8195 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a pig-tail module.

Contextual Info: epitex Opto-Device & Custom LED PD1450-35T52 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1450-35T52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed

Contextual Info: epitex Opto-Device & Custom LED PD1300-35T32 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35T32 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed

PD1300-35T00

Contextual Info: epitex Opto-Device & Custom LED Φ5 STEM TYPE stem type InGaAs PD Lead Pb Free Product RoHS compliant PD1300-35T00 InGaAs PIN-PD PD1300-35T00 is InGaAs PIN-photodiode featuring excellent. responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with 0.35x0.35mm

SE-171

Abstract: G8195 G8195-11 G8195-12 pin photodiode 10 ghz Hamamatsu se171
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8195 series Pigtail type, 1.3/1.55 µm, 2 GHz G8195 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a pig-tail module.