PIN040A Search Results

2N4117A NATIONAL SEMICONDUCTOR

Abstract: riaa equalized UDT-PIN OPA2111 OPA2111AM OPA2111BM OPA2111KM OPA2111SM UDT Pin-040A
Contextual Info: OPA2111 Dual Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV/√Hz max at 10kHz ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 4pA max

OPA2111

Abstract: UDT Pin-040A OPA2111AM OPA2111BM OPA2111KM OPA2111KP OPA2111SM
Contextual Info: OPA2111 Dual Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV/√Hz max at 10kHz ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 4pA max

udt UV100

Abstract: PIN-10D PIN-10AP PIN-6DPI UDT Sensors PSD FIL-3C PIN-040A PIN-HS040 XUV-100C PIN-5DI
Contextual Info: INTRODUCTION PACKAGE MECHANICAL SPECIFICATIONS AND PARAMETERS 1. Parameter Definitions: A = Distance from top of chip to top of glass. a = Photodiode Anode. B = Distance from top of glass to bottom of case. c = Photodiode Cathode Note: cathode is common to case in metal package products unless otherwise noted .

HP 5082-4204

Abstract: UDT Pin-040A photodiode amplifier OPA128 SD-041-11-21-011 fast photodiode amplifier hp 5082-4204 pin photodiode 760nm photodiode 5082-4204 J FET RF Cascode Input
Contextual Info: DESIGNING PHOTODIODE AMPLIFIER CIRCUITS WITH OPA128 The OPA128 ultra-low bias current operational amplifier achieves its 75fA maximum bias current without compromise. Using standard design techniques, serious performance trade-offs were required which sacrificed overall

Contextual Info: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%

Contextual Info: OPA2111 Dual Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV/√Hz max at 10kHz ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 4pA max

Contextual Info: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%

Contextual Info: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%

PIN-10D

Abstract: PIN-5DI PIN-13DI PIN-10DF PIN-10DI PIN10DI OSD100-0A InGaAs APD quadrant OSD5-5T PIN-44DI
Contextual Info: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,

PIN-125DPL

Abstract: PIN-10DP InGaAs APD quadrant OSD1-5T pin-6dp PIN-10AP PIN-10DPI PIN-13DPI PIN-220DP PIN-25D
Contextual Info: Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral

FIL-UV50

Abstract: FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP
Contextual Info: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the

UDT Pin-6dp

Abstract: UDT UV-005 UDT Pin-6dpI OSD5.8-7Q OSD15-5T OSD5-5T BPX65 amplifier UDT photodiode -5T PIN-020A UDT-455UV
Contextual Info: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output under a variety of

OPA404

Abstract: OPA404AG OPA404BG OPA404KU OPA404SG
Contextual Info: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%

OPA404AG

Abstract: 100-k05 OPA404 OPA404BG OPA404KU OPA404SG OPA404KP UDT Pin-040A
Contextual Info: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%

opa404

Contextual Info: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%

SPOT-9DMI

Abstract: SPOT-2DMI SC-10D QD7-0 PIN-040A SPOT-4D SPOT-9D OSD15-5T SPOT-2D OSD5-5T
Contextual Info: Segmented Photodiodes SPOT Series Position Sensing Detector (PSD) The SPOT Series are common substrate photodetectors segmented into either two (2) or four (4) separate active areas. They are available with either a 0.005" or 0.0004" well defined gap between the adjacent

Contextual Info: OPA2111 Dual Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV/√Hz max at 10kHz ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 4pA max

AD547

Abstract: OPA2111 OPA2111AM OPA2111BM OPA2111KM OPA2111SM transistor kp 303
Contextual Info: OPA2111 Dual Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV/√Hz max at 10kHz ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 4pA max

PIN-10AP

Abstract: PIN-10DP PIN-10D UV-005EQ PIN-5DI BPX65 high sensitive XUV-020 UV-005DC UV-013D UV-013E
Contextual Info: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the

Contextual Info: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%

OPA404 "pin compatible"

Abstract: OPA404 OPA404AG OPA404BG OPA404KU OPA404SG
Contextual Info: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%

Contextual Info: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%

Contextual Info: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%

PIN-5DI

Abstract: PIN-020A PIN-3CDI UDT Pin-040A PIN-10DI PIN-6DI PIN-13DI FIL-3C diodes 10di 13DI
Contextual Info: PHOTOCONDUCTIVE SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • • • • • • The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such