PJ- 030 Search Results

Contextual Info: SPECTRUM CONTROL TECHNOLOGY INC Tubu Capa Spectrum Control Technology Inc. Pj jt type capacitors are ideally suited for connector and filter block applica­ tions requiring high capacitance values. Compared to feed-thru capacitors, the Pj capacitors have a much

Contextual Info: SPECTRUM CONTROL TECHNOLOGY INC. Tubular Pi Type Capacitors Spectrum Control Technology Inc. Pj it type capacitors are ideally suited for connector and filter block applica­ tions requiring high capacitance values. Compared to feed-thru capacitors, the Pj capacitors have a much

PJ-030C

Abstract: pj-030 "DC Power Jack"
Contextual Info: PC FILE NAME: 2 3 PJ-030C 1 3 2 1 PJ-030C COPYRIGHT 2007 BY CUI INC. 0.80X1.50 2.7 0.106 8.7 0.343 2.5 0.098 2 1.00 0.039 5.5 0.217 3 1 2.5 0.098 6.00 0.236 BODY CENTER PIN TERMINAL 1 TERMINAL 2 TERMINAL 3 Copper Brass Copper Alloy Brass PBT MATERIAL Nickel

"DC Power Jack"

Contextual Info: PC FILE NAME: 2 3 PJ-030DH 1 3 2 1 PJ-030DH COPYRIGHT 2007 BY CUI INC. 0.80X1.50 2.7 0.106 8.7 0.343 2.5 0.098 2 1.00 0.039 5.5 0.217 3 1 2.5 0.098 6.00 0.236 BODY CENTER PIN TERMINAL 1 TERMINAL 2 TERMINAL 3 Brass Brass Copper Alloy Brass PBT MATERIAL Nickel

pj-030

Contextual Info: PC FILE NAME: 2 3 PJ-030D 1 3 2 1 PJ-030D COPYRIGHT 2007 BY CUI INC. 0.80X1.50 2.7 0.106 8.7 0.343 2.5 0.098 2 1.00 0.039 5.5 0.217 3 1 2.5 0.098 6.00 0.236 BODY CENTER PIN TERMINAL 1 TERMINAL 2 TERMINAL 3 Copper Brass Copper Alloy Brass PBT MATERIAL Nickel

pj-030

Abstract: pj 87 PJ030
Contextual Info: PC FILE NAME: 2 3 PJ-030CH 1 3 2 1 PJ-030CH COPYRIGHT 2007 BY CUI INC. 0.80X1.50 2.7 0.106 8.7 0.343 2.5 0.098 2 1.00 0.039 5.5 0.217 3 1 2.5 0.098 6.00 0.236 BODY CENTER PIN TERMINAL 1 TERMINAL 2 TERMINAL 3 Brass Brass Copper Alloy Brass PBT MATERIAL Nickel

553B

Abstract: IRFF9220 JANTX2N6847 JANTXV2N6847 diode ior 0014
Contextual Info: |0 p pj p| I IOR Rectifier I pj Provisional Data Sheet No. PD-9.553B I" I q JANTX2N6847 HEXFET POWER MOSFET JANTXV2N6847 [REF:MIL-PRF-19500/563] [GENERIC :IRFF9220] P -C H A N N E L -200 Volt, 1.5Q HEXFET Product Summanf HEXFET technology is the key to International

Contextual Info: date 07/18/2012 page 1 of 3 MODEL: PJ-030CH-SMT │ DESCRIPTION: DC POWER JACK FEATURES • surface mount • shielded • rated up to 3.5 A RoHS SPECIFICATIONS parameter conditions/description min typ rated input voltage max 16 Vdc rated input current contact resistance1

Contextual Info: date 11/07/2012 page 1 of 3 MODEL: PJ-030DH-SMT │ DESCRIPTION: DC POWER JACK FEATURES • surface mount • shielded • rated up to 3.5 A RoHS SPECIFICATIONS parameter conditions/description min typ rated input voltage max 16 Vdc rated input current contact resistance1

Contextual Info: ffZ ffI H E W L E T T 1 PACKARD "KM Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0300 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0 GHz • 10.0 dBm Typical Pj dB at 1.0 GHz Description

Contextual Info: MODEL: PJ-030CH-SMT date 07/18/2012 page 1 of 3 DESCRIPTION: DC POWER JACK FEATURES • surface m ount • shielded • rat ed up t o 3.5 A RoHS SPECIFICATIONS parameter conditions/description min typ rat ed input volt age max 16 Vdc rat ed input current cont act resist ance 1

Contextual Info: MODEL: PJ-030DH-SMT date 07/18/2012 page 1 of 3 DESCRIPTION: DC POWER JACK FEATURES • surface m ount • shielded • rat ed up t o 3.5 A RoHS SPECIFICATIONS parameter conditions/description min typ rat ed input volt age max 16 Vdc rat ed input current cont act resist ance 1

B52 transistor

Contextual Info: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz

transistor 86 y 87

Abstract: eic 57 210 17bs2 AT-42000 AT-42000-GP4 pj 68 S2a
Contextual Info: « Thai minM HP AECWKLAERTDT Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High O utput Power: 21.0 dBm Typical Pj dB at 2.0 GHz m ixer and oscillator applications

Contextual Info: Philips Semiconductors Military Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller 87C528 DESCRIPTION I —I I pJ I m BUSl T he 87C 528 single-chip 8 -bit m icrocontro lle r is m anufactu red in an advanced C M O S process and is a deriva tive o f the 80C51

Contextual Info: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz

Contextual Info: WBI HEW LETT WZfiM P A C K A R D Cascadable Silicon Bipolar MMIC Am plifier Technical Data MSA-0485 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 3.6 GHz • 8.0 dB Typical Gain at 1.0 GHz • 12.5 dBm Typical Pj dB at 1.0 GHz • Unconditionally Stable

0-30V

Contextual Info: D w & pj m m Ä f c m - « tì f S f r f c K f l # . Ó 3kED*aEfcmsw, i t «iüÉfiÉV DW302AV 0-80V fr-2A DWWAV 0-30V 0-3A KftS exiim ifflv 0W305AV £ r DWJ01W.V « */?*•. 12ûXl6ÔX3Ô0mm k lis «tfl^OÄnV DW303AV

Contextual Info: Thai H E W L E T T mLKM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0520 Features • C ascadable 5 0 Q Gain B lock • High O utput Power: +23 dBm Typical Pj dB at 1.0 GHz • Low D istortion : 33 dBm Typical IP3 at 1.0 GHz

T627

Contextual Info: 1 5 0 A Avg. 2 3 5 R M S Up to 1 2 0 0 Volts 1 0 - 5 0 /vs Fast Switching SCR T627_ _15 Symbol 0D <¿>0, (¡>Dj H (pj J, L N Inches Millimeters Min. Max. 1.610 .745 1.420 1.650 .755 1.460 40.89 18.92 36.07 41.91 19.18 37.08 .500 .135 .072 .560 .145 .082

pj 1126 1V

Contextual Info: OROTEL PRODUCTS INCORPORATED PART NUMBER ’/ 2LI? " L" NO DC 13402 SOUTH 71 HIGHWAY GRANDVIEW, MO 64030 DCR DCI MAX MAX Amps ( pj) .’" I 09 1.6 30 56 99 16 8 " l" WITH DCI ( p H ) TEST LEVEL (VRMS) (816) 761-6314 FAX (816) 763-2278 DCI (Amps) FOR % D E C R E A S E IN "L"

AY 6 smd

Contextual Info: 1. M echanical D im ensions: . E lectrica l S p ecifica tio n s: Isolation: RCV Turns Rotio: o PJ* I CD 0.045— 1 IC Side LL: 0 .3 u H IC Side DCR: 0 .6 Line Side DCR: SEC 0.950 M inim um @ 10KHz Max @ 1M Hz R e tu rn 100m V lO O m V S hort Line Side Ohms Max

Contextual Info: t e f l o n * in s u l a t e d t e r m in a l s CONCORD r r - i4 R G H • » B mm m * L p T : N -— - L l pJ I A { « -C - ^ -F — F IG 480 P A R T NO. A B C N P 1112-02 1112-05 1112-06 1112-07 1112-08 .125 .150 .150 .150 .150 .093 .125 .125 .125 .125 .050

alc100

Abstract: JE9015 JE9014 AF200
Contextual Info: NEC NPN SILICON TRANSISTOR E L E C T R O N OEVIC E D E S C R IP T IO N JE9014 The J E 9 0 1 4 is designed for use in pre-amplifier o f low level P A C K A G E D IM E N S IO N S in m illim e te rs l-nches and low noise. FEATURES 5 2 MAX • H igh total power dissipation. |Pj : 6 2 5 mW)