PK13197T40 Search Results

IS41LV16257B

Abstract: 41LV16257B PK13197T40
Contextual Info: IS41LV16257B JUNE 2007 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE FEATURES DESCRIPTION • • • • The ISSI IS41LV16257B is 262,144 x 16-bit highperformance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as

IS41LV16105A

Contextual Info: ISSI IS41LV16105A 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16105A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page

IS41C16105

Abstract: IS41LV16105 IS41C16105-50TL N-40A
Contextual Info: IS41C16105 IS41LV16105 ISSI 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE DECEMBER 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single

Contextual Info: IS27C2048_ 131,072 x 16 HIGH-SPEED CMOS EPROM ESI PR ELIM IN A R Y N O VEM B ER 1997 FEATURES DESCRIPTION • Fast read access time: 90 ns The lS S I IS27C2048 is an ultra-high-speed 2 megabit 128Kword by 16-bit CMOS Programmable Read-Only Memory.

IS41LV16100B-50TL

Abstract: IS41LV16100B
Contextual Info: ISSI IS41LV16100B 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These

IS42VS16100C1

Abstract: 42VS16100C1
Contextual Info: ISSI IS42VS16100C1 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently

IS41LV16256B-35TL

Contextual Info: ISSI IS41LV16256B 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout

IS41LV16100A

Contextual Info: ISSI IS41LV16100A 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE MARCH 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These

IS41LV16257B

Contextual Info: ISSI IS41LV16257B APRIL 2005 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE FEATURES DESCRIPTION • • • • The ISSI IS41LV16257B is 262,144 x 16-bit highperformance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as

IS41LV44002B

Abstract: IS41LV44002B-50J IS41LV44002B-50JL IS41LV44002B-50T
Contextual Info: ISSI IS41LV44002B 4M x 4 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE JULY 2006 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These

IS41LV16256B

Abstract: 41LV16256B
Contextual Info: ISSI IS41LV16256B 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout

Contextual Info: ESI IS27LV2048 131,072 x 16 HIGH-SPEED CMOS EPROM ADVANCE INFORMATION JANUARY 1998 FEATURES DESCRIPTION • Fast read access time: 90 ns The lS S IIS27LV2048 is an ultra-high-speed 2 megabit 131Kword by 16-bit CMOS Programmable Read-Only Memory. This superior random access capability results from a focused

Contextual Info: ISSI IS41LV4105B 1M x 4 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE FEATURES PRELIMINARY INFORMATION JULY 2005 DESCRIPTION • Fast Page Mode Access Cycle • TTL compatible inputs and outputs • Refresh Interval: - 1,024 cycles/16 ms • Refresh Mode: RAS-Only,

IS41LV16100B

Abstract: 41LV16100B
Contextual Info: ISSI IS41LV16100B 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE DECEMBER 2006 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These

IS41C16256

Abstract: IS41LV16256
Contextual Info: IS41C16256 IS41LV16256 ISSI 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE FEATURES DESCRIPTION The ISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR),

Contextual Info: ISSI PACKAGING INFORMATION Plastic TSOP Package Code: T Type II N N/2+1 E1 E 1 Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D1 and E do not include mold flash protrusions and should be measured from the bottom of the

Contextual Info: IS41C16256A IS41LV16256A ISSI 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout

35k-l

Contextual Info: IS41C16257A IS41LV16257A ISSI 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE APRIL 2005 FEATURES DESCRIPTION • • • • The ISSI IS41C16257A and the IS41LV16257A are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows

Contextual Info: ISSI IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/130/150 ns — 2.7V: 120 ns

Contextual Info: ISSI IS42VS16100C1 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently

IS41C16257

Abstract: IS41C16257-35KL IS41LV16257
Contextual Info: ISSI IS41C16257 IS41LV16257 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE JANUARY 2006 FEATURES DESCRIPTION • • • • The ISSI IS41C16257 and the IS41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses

Contextual Info: ISSI IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/130/150 ns — 2.7V: 120 ns

Contextual Info: ISSI PACKAGING INFORMATION Plastic TSOP Package Code: T Type II N N/2+1 H E 1 N/2 D SEATING PLANE A e Plastic TSOP (T - Type II) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 40/44 A 1.00 1.20 0.039 0.047 A1 0.05 0.20 0.002 0.008 B 0.30 0.40 0.012 0.016

Contextual Info: ISSI IS41LV16100B 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE DECEMBER 2006 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These