PLATE DBM 01 Search Results

QQ-S-365

Abstract: 2-18ghz UNC-2B UNC-2B 2-56
Contextual Info: ï 1 REVISIONS ZONE REV. ECO NO. DESCRIPTION DATE ENGINEERING RELEASE MOUNTING PLATE OPTIONAL WITH .104 DIA THRU HOLES (4 PL) SMA FEMALE (FIELD REPLACEABLE) B — — B .18 FREQ: LOSS: ISO: VSWR: SPEED: RF PWR: DC PWR: 2 - 1 8Ghz 3dB 60dB 2:1 10OnS 27 dBm

AT-220

Contextual Info: AT-220 11/15/96 1:49 PM Page 1 Black plate Digital Attenuator, 30 dB, 4-Bit DC - 2 GHz AT-220 V3.00 SO-16 Features ● ● ● ● ● ● ● Attenuation 2-dB Steps to 30 dB High Accuracy +/-3% Temperature Stability +/-0.15 dB from -40°C to +85°C Low Intermodulation Product: +50 dBm IP3

AT-220RTR

Abstract: MS-012-AC AT-220 AT-220TR AT220
Contextual Info: AT-220 11/15/96 1:49 PM Page 1 Black plate Digital Attenuator, 30 dB, 4-Bit DC - 2 GHz AT-220 V3.00 SO-16 Features ● ● ● ● ● ● ● Attenuation 2-dB Steps to 30 dB High Accuracy +/-3% Temperature Stability +/-0.15 dB from -40°C to +85°C Low Intermodulation Product: +50 dBm IP3

RW mmic

Contextual Info: AT-22 11/15/96 1:49 PM Page 1 (Black plate! m an A M P com pany Digital Attenuator, 30 dB, 4-Bit DC - 2 GHz Features SO-16 • • • A ttenuation 2-dB Steps to 30 dB High A ccuracy +/-3% T em p eratu re Stability +/-0.15 dB from -40 °C to +85°C • Low In term o d u latio n Product: +50 dBm IP3

Contextual Info: MAAP-010169 10 W Power Amplifier 2 - 6 GHz V1 Functional Schematic Features •      +41 dBm Saturated Output Power Linear Gain: 18 dB Power Added Efficiency: 30% at PSAT 50  Input / Output Match Ceramic Flange Mount Package

Contextual Info: MAAP-010168 10 W Power Amplifier 0.5 - 3 GHz Rev. V1 Functional Schematic Features •      Saturated Output Power: +41 dBm Linear Gain: 24 dB Power Added Efficiency: 30% at PSAT 50  Input / Output Match Ceramic Flange Mount Package

Contextual Info: MAAP-010168 10 W Power Amplifier 0.5 - 3 GHz Rev. V1 Functional Schematic Features •      Saturated Output Power: +41 dBm Linear Gain: 24 dB Power Added Efficiency: 30% at PSAT 50  Input / Output Match Ceramic Flange Mount Package

TTL 7474

Abstract: TTL 7475 7475 ttl datasheet ttl 7474 7474 ttl MVS Series ttl 7474 data sheet 4S3065 4S3066 4S3067
Contextual Info: VS M PRODUCT FEATURE 4S3060 SERIES "SMA" FEMALE FIELD REPLACEABLE SP4T SWITCHES 1.25 OPTIONAL MOUNTING PLATE WITH .104 DIA THRU HOLES (4 PL.) 1.050 ( 2 - 18 GHz ) .10 .10 • Reduced Harmonics • Integral TTL Drivers .018 DIA 7 PLACES J4 .62 • Miniature Size

4S3068-MP

Abstract: 4S3065 4S3066 4S3067 4S3068
Contextual Info: VS M PRODUCT FEATURE 4S3060 SERIES "SMA" FEMALE FIELD REPLACEABLE SP4T SWITCHES 1.25 OPTIONAL MOUNTING PLATE WITH .104 DIA THRU HOLES (4 PL.) 1.050 ( 2 - 18 GHz ) .10 .10 • Reduced Harmonics • Integral TTL Drivers .018 DIA 7 PLACES J4 .62 • Miniature Size

Contextual Info: MASW-011032 Switch, Symmetrical SP3T 100 Watt Reflective 0.05 - 2.5 GHz Preliminary- Rev. V4P Functional Schematic Features • Suitable for High Power Military and Civilian Radio Applications  Power Handling:100 W C.W. @ 85°C  Insertion Loss: 0.45 dB @ 2 GHz

127D

Abstract: 130Q
Contextual Info: UNCONTROLLED DOCUMENT REV. A PART NUMBER REV. LLD —IT 1 31 5550MSC A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11146. DATE 01.24.07 ABSOLUTE MAXIMUM RATINGS <Ta=25'C PARAMETER SYMBOL POWER SUPPLY VOLTAGE INPUT VOLTAGE INVISIBLE LASER RADIATION, OUPUT CURRENT

Contextual Info: REVISIONS LTR DESCRIPTION DATE Prepared in accordance with ASME Y14.24 APPROVED Vendor item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGE 1 2 PMIC N/A PREPARED BY RICK OFFICER Original date of drawing YY-MM-DD CHECKED BY RAJESH PITHADIA 13-07-01 4

Contextual Info: IBS IL 24 BK-LK INTERBUS Inline Bus Terminal: Remote Bus Connections Using Fiber Optics Data Sheet 6505A 01/2002 5 5 6 1 C 0 0 1 This data sheet is only valid in association with the "Configuring and Installing the INTERBUS Inline Product Range" User Manual

130Q

Abstract: C175
Contextual Info: PART NUMBER REV. LLD —IT 1 31 2 5 0 5 OSSC A UNCONTROLLED DOCUMENT REV. A WARNING INVISIBLE LASER RADIATION, AVOID DIRECT EXPOSURE TO BEAM. E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11146. 01.24.07 ABSOLUTE MAXIMUM RATINGS <Ta=25'C PARAMETER SYMBOL POWER SUPPLY VOLTAGE

TGF2023-01

Abstract: EAR99
Contextual Info: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat 55% Maximum PAE 10 dB Nominal Power Gain at 10GHz Bias: Vd = 28 - 35 V, Idq = 125 mA, Vg = -3.6 V

130Q

Abstract: C175
Contextual Info: UNCONTROLLED DOCUMENT REV. A PART NUMBER REV. LLD — IT 1 51 5 5 5 0 S S C A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 1 4 6. 01.24.07 WARNING INVISIBLE LASER RADIATION, AVOID DIRECT EXPOSURE TO BEAM. ABSOLUTE MAXIMUM RATINGS <Ta=25'C PARAMETER

CF001

Contextual Info: Specification for monolithic crystal filter: MQF 90.0–3000/10 01 February 2007 1. General 1.1. Case: Terminate plate materials: Ni / Au Ni > 2.0 µm Au > 0.75 µm 1.2. 1.3. 1.4. 1.5. 1.6. Type name: Number of poles: Operating temperature range: Operaable temperature range:

wiring diagram local control station

Contextual Info: IBS IL 24 BK RB-LK INTERBUS Inline Bus Terminal for Connecting a Remote Bus Branch: Remote Bus Connections Using Fiber Optics Data Sheet 6500A 6 3 2 8 A 0 0 1 01/2002 This data sheet is only valid in association with the "Configuring and Installing the INTERBUS Inline Product

GaN matching 100 watt

Contextual Info: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 38 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V Typical

Contextual Info: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 38 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V Typical

Contextual Info: MPN2-01000200-28P L-BAND, MEDIUM POWER AMPLIFIER Specifications at +23°C Min Typ Max Units 1.0 TO 2.0 28 dB ±1.0 dB Noise Figure 1.5 dB Input Return Loss -9.54 dB Output Return Loss -9.54 dB Output Power @ 1 dB Compression P1dB 28 .140 [3.56] .58 [14.7]

Contextual Info: REVISIONS LTR DESCRIPTION DATE Prepared in accordance with ASME Y14.24 APPROVED Vendor item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGE 1 2 3 PMIC N/A PREPARED BY Phu H. Nguyen Original date of drawing YY MM DD CHECKED BY 13-01-08 Phu H. Nguyen

mmic SOT-89 h1

Abstract: FR4 dielectric constant at 2.4 Ghz SOT-89 LM1 SHF-0189 Stanford Microdevices 4 ghz LL1608-FH6N8K MCH18 FR4 dielectric constant 4.6 H1 SOT-89 S12vs
Contextual Info: Preliminary Preliminary Product Description SHF-0189 Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

SHF 205

Abstract: SOT-89 LM1 SHF-0189 Scattering parameter
Contextual Info: Preliminary Preliminary Product Description SHF-0189 Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added