PM45 Search Results

Contextual Info: PM4575J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain

Contextual Info: PM45302F Silicon N-Channel MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain

PM400DV1A060

Abstract: pm300DV1A120 PM200DV1A120 PM600DV1A060 15KW motor igbt v1 sc 90 servo IGBT MOTOR CONTROL 15KW igbt 600V1200V
Contextual Info: Product Information “V1 Series” to Lineup of High Output Intelligent Power Modules PM400DV1A060/PM600DV1A060 PM200DV1A120/PM300DV1A120 PM450DV1A120 -Featuring low power loss and a compact package for motor control systems

PM45100K

Abstract: Hitachi DSA001652
Contextual Info: PM45100K Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

Hitachi DSA001652

Contextual Info: PM4575J Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

Hitachi DSA00263

Abstract: PM4575J PM5075J
Contextual Info: PM4575J Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

PM450CLA120

Abstract: E80276 tj 827
Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM450CLA120 フラットベース形 絶縁形 PM450CLA120 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.9V ➁ CSTBTチップのTj検出による過熱保護を

Contextual Info: PM45100K Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain

Contextual Info: PM4550J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain

UUA 180

Abstract: diod m4 PM45302F vus3 M4 dioda
Contextual Info: HITACHI PM45302F S IL IC O N N - C H A N N E L M O S F E T M O D ULE HIGH S P E E D P O W E R SW ITCH ING • FEATU RES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching • Low Drive Current • Wide Area of Safe Operation • Inherent Parallel Diod between Source and Drain

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM450DV1A120 FLAT-BASE TYPE INSULATED PACKAGE PM450DV1A120 FEATURE a Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted.

E80276

Abstract: PM450CLA120 ic 3254 internal block diagram IGBT Gate Drive Optocoupler 7.5KW mitsubishi motor wiring
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM450CLA120 PM450CLA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM450CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process.

Contextual Info: PM450CLA120 Intellimod ฀L-Series Three฀Phase฀ IGBT฀Inverter฀ 450฀Amperes/1200฀Volts A Q N J L T 11 M 10 9 P V W U L 8 7 S AF J AD AC

single phase PWM inverters circuit diagram

Abstract: PM450CLA060 PM450
Contextual Info: PM450CLA060 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter 450 Amperes/600 Volts A Q N J L T 11 10 U L M 9 8 P V W 7 S AF AG AD AC B D L M 12 K (8 PLACES) AB E F C AB

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM450CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM450CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.8V @Tj=125°C

Contextual Info: AC-DC PM450 450 -PROTEK 480 WATT MEDICAL SWITCHING POWER SUPPLIES 450-480 WATT MEDICAL SWITCHING POWER SUPPLIES PM 450 SERIES DE S CR I PT IO N LV D RoHS The PM450 series comprising single and multiple output models for 450-480 watts of continuous output power is

PM45502C hitachi

Abstract: PM45502C Hitachi DSA00309
Contextual Info: PM45502C Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

Contextual Info: PM4550J Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Sw itching Features • • • • • • • • Equipped with Power M OS FET L ow on-resistance High speed switching Low drive current W ide area o f safe operation Inherent parallel diode between source and drain

Contextual Info: PM450CLA060 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter 450 Amperes/600 Volts A Q N J L T 11 10 U L M 9 8 P V W 7 S AF J AD AC B D L M 12 K (8 PLACES) AB E F C AB X Y

PM5050J

Abstract: PM4550J
Contextual Info: PM4550J Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

CX20561

Abstract: cx20561-12z toshiba satellite c655 toshiba satellite c640 cx2056 wpc8763ldg 31TE1MB01N0 intel 4965AG g909 WPCE775
Contextual Info: 1 2 3 4 5 6 7 8 VER : E3D Description 31TE1MB0010 TE1M MB PM45/RB/MS WO CPU 31TE1MB0120 TE1M MB(PM45/MAIN/RB/HDMI/CIR)WO CPU 31TE1MB0130 TE1M MB(GM45/EXP/NO CIR/MS)WO CPU 31TE1MB0140 TE1M MB(GM45/GS/EXP/MS)WO CPU 31TE1MB0170 TE1M MB(GM45/GS/EXP/LC)WO CPU PENRYN

Contextual Info: PM45502C Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain

Contextual Info: PM450CLA120 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter 450 Amperes/1200 Volts A Q N J L T 11 10 U L M 9 8 P V W 7 S AF J AD AC B D L M 12 K (8 PLACES) AB E F C AB

power supply 450 watt circuit diagram

Abstract: 500 watt power UPS circuit diagram 450 watt circuit diagram 500 watt power supply circuit diagram 20kHz
Contextual Info: PM450CLA120 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter 450 Amperes/1200 Volts A Q N J L T 11 10 U L M 9 8 P V W 7 S AF J AD AC B D L M 12 K (8 PLACES) AB E F C AB